Datasheet FQI19N10, FQB19N10 Datasheet (Fairchild Semiconductor)

FQB19N10 / FQI19N10

100V N-Channel MOSFET

August 2000

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect

FQB19N10 / FQI19N10

transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

D

G

S

D2-PAK

FQB Series

Absolute Maximum Ratings T

Symbol Parameter FQB19N10 / FQI19N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

, T

T

J

STG

T

L

Drain-Source Voltage 100 V Drain Current

Drain Current - Pulsed Gate-Source Voltage ± 25 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) * Power Dissipation (T

Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

G

D

S

= 25°C unless otherwise noted

C

- Continuous (T

= 25°C)

C

- Derate above 25°C 0.5 W/°C

= 25°C)

C

= 100°C)

C

Features

• 19A, 100V, R

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 32 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

I2-PAK

FQI Series

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

= 0.1Ω @VGS = 10 V

DS(on)

19 A

13.5 A 76 A

220 mJ

19 A

7.5 mJ

6.0 V/ns

3.75 W 75 W

300 °C

!

G

!

D

!

"

" "

"

!

S

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 2.0 °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, August 2000

FQB19N10 / FQI19N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 9.5 A

V

GS

= 40 V, ID = 9.5 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.078 0.1 Ω

-- 12 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 165 215 pF Reverse Transfer Capacitance -- 32 40 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 600 780 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 150 310 ns Turn-Off Delay Time -- 20 50 ns Turn-Off Fall Time -- 65 140 ns Total Gate Charge Gate-Source Charge -- 3.9 -- nC Gate-Drain Charge -- 9.0 -- nC

= 50 V, ID = 19 A,

V

DD

= 25 Ω

R

G

V

= 80 V, ID = 19 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 7.5 25 ns

-- 19 25 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.9mH, IAS = 19A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 19 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 76 A

= 0 V, IS = 19 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 200 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 19 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 78 -- ns

(Note 4)

Rev. A, August 2000

Typical Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

10

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

1

10

℃

175

0

℃

25

10

FQB19N10 / FQI19N10

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Te st

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

, Dra in Curre n t [A ]

D

I

-1

10

246810

VGS , Gate-Source Voltage [V]

℃

-55

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0.30

0.24 VGS = 10V

],

Ω

0.18

[

DS(on)

R

0.12

Drain-Source On-Resistance

0.06

0.00

0 20406080

VGS = 20V

※

Note : T

℃

= 25

J

ID , Drain Curren t [A ]

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

25

175

VSD , Source-Drain Voltage [V]

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Te st

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1500

1200

900

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

600

Capacitance [pF]

300

0

-1

10

C

rss

0

10

1

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 4 8 12 16 20

QG, Tota l Gate Charge [n C]

VDS = 50V

VDS = 80V

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

D

= 19A

Typical Characteristics (Continued)

FQB19N10 / FQI19N10

1.2

1.1

1.0

, (Norm a liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Ope ra tion in This A r e a is Limited by R

※

Notes :

1. T

= 25 oC

C

= 175 oC

2. T

J

3. Single Pulse

1

10

DS(on)

100 µs

1 ms

10 ms

DC

2

10

1

10

, Drain Current [A]

0

D

I

10

-1

10

0

10

VDS, Drain-Source Voltage [V]

GS

= 250

D

= 0 V

3.0

2.5

2.0

μ

A

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Notes :

= 10 V

1. V

GS

2. I

= 9.5 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

20

16

12

8

, Drain Current [A]

D

I

4

2

10

0

25 50 75 100 125 150 175

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

0

D=0.5

10

※

N o te s :

(t) = 2.0 ℃/W Ma x .

0.2

0.1

0.05

-1

10

0.02

0.01

(t), Therm al Response

JC

θ

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

1. Z

θ

JC

2. D u ty F a c to r, D =t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

θ

JC

0

1

10

t1, S q u a re W a v e P u lse D u ra tio n [s e c]

Figure 11. Transient Thermal Response Cur ve

Rev. A, August 2000

Gate Charge Test Circuit & Waveform

V

GS

DS

GS

10V

Q

g

Q

gs

Q

gd

Charge

Same Type

50KΩ

200nF

12V

FQB19N10 / FQI19N10

200nF

3mA

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

R

L

10V

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

10V

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

2

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQB19N10 / FQI19N10

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Rev. A, August 2000

Package Dimensions

D2PAK

4.50 ±0.20

1.30

+0.10 –0.05

(0.40)

9.90

±0.20

FQB19N10 / FQI19N10

1.20 ±0.20

0.10 ±0.15

2.40 ±0.20

0°~3°

+0.10

0.50

–0.05

2.54 ±0.30

1.40 ±0.20

1.27

±0.10

0.80 ±0.10

2.54 TYP 2.54 TYP

9.20 ±0.20

2.00 ±0.10

15.30 ±0.30

4.90 ±0.20

(0.75)

10.00 ±0.20 (8.00) (4.40)

10.00 ±0.20

15.30 ±0.30

(1.75)

(2XR0.45)

(7.20)

9.20 ±0.20

4.90 ±0.20

0.80 ±0.10

FQB19N10 / FQI19N10

Package Dimensions

(0.40)

(1.46)

(Continued)

9.90 ±0.20

(45°)

I2PAK

1.20 ±0.20

9.20 ±0.20

4.50 ±0.20

1.30

+0.10 –0.05

(0.94)

1.27 ±0.10 1.47 ±0.10

13.08 ±0.20

10.00 ±0.20

0.80 ±0.10

2.54 TYP2.54 TYP

MAX 3.00

10.08 ±0.20 MAX13.40

0.50

+0.10 –0.05

2.40 ±0.20

Rev. A, August 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

®

FAST

FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. F1

Datasheet FQI19N10, FQB19N10 Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual