Datasheet FQI13N06L, FQB13N06L Datasheet (Fairchild Semiconductor)

FQB13N06L / FQI13N06L

60V LOGIC N-Channel MOSFET

FQB13N06L / FQI13N06L

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/

Features

• 13.6A, 60V, R

• Low gate charge ( typical 4.8 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.11Ω @VGS = 10 V

DS(on)

DC converters, and high efficiency switching for power management in portable and battery operated products.

!

D

!

"

" "

"

!

S

D

G

S

D2-PAK

FQB Series

G

D

Absolute Maximum Ratings T

S

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

!

G

Symbol Parameter FQB13N06L / FQI13N06L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 60 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

13.6 A

9.6 A

54.4 A Gate-Source Voltage ± 20 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) * Power Dissipation (T

= 25°C)

C

(Note 2) (Note 1) (Note 1) (Note 3)

90 mJ

13.6 A

4.5 mJ

7.0 V/ns

3.75 W

45 W

- Derate above 25°C 0.3 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 3.35 °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB13N06L / FQI13N06L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆BV / ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 150°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.05 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 6.8 A

GS

= 5 V , ID = 6.8 A

V

GS

V

= 25 V, ID = 6.8 A

DS

(Note 4)

1.0 -- 2.5 V

----0.088

0.110

0.11

0.14

-- 7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 95 125 pF Reverse Transfer Capacitance -- 17 23 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 270 350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 90 190 ns Turn-Off Delay Time -- 20 50 ns Turn-Off Fall Time -- 40 90 ns Total Gate Charge Gate-Source Charge -- 1.6 -- nC Gate-Drain Charge -- 2.7 -- nC

= 30 V, ID = 6.8 A,

V

DD

= 25 Ω

R

G

= 48 V, ID = 13.6 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

-- 8 25 ns

-- 4.8 6.4 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 570µH, IAS = 13.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13.6A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 13.6 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 54.4 A

= 0 V, IS = 13.6 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 45 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 13.6 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 45 -- ns

(Note 4)

Typical Characteristics

FQB13N06L / FQI13N06L

V

GS

Top : 10 .0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

1

Botto m : 3 .0 V

10

, Drain Current [A]

D

I

0

10

-1

10

!

Note s :

1. 250#s Pulse Test = 25

2. T

C

0

10

"

1

10

VDS, Drain-Source Voltage [V]

250

200

],

$

[m

R

150

100

DS(ON)

50

VGS = 5V

VGS = 10V

Drain-Source On-Resistance

0

0 10203040

!

= 25

Note : T

J

ID, Drain Current [A]

1

10

0

10

"

175

, Drain Current [A]

D

I

"

25

"

-1

10

024

-55

!

Notes :

= 25V

1. V

DS

2. 250#s Pulse Test

6810

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

"

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

"

175

"

25

VSD, Source-Drain voltage [V]

!

Notes :

= 0V

1. V

GS

2. 250#s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 30V

VDS = 48V

!

Note : I

= 13.6A

D

800

600

C

oss

C

400

Capacitance [pF]

200

0

-1

10

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = sho rted )

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

!

Notes :

= 0 V

1. V

GS

2. f = 1 M H z

0

10

1

10

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0246810

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

Typical Characteristics (Continued)

FQB13N06L / FQI13N06L

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

!

Notes :

1. VGS = 0 V

2. ID = 250 #A

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-1

10

Operation in This Area is Limited by R

DS(on)

10 ms

DC

!

Notes :

1. T

= 25 oC

C

2. T

= 175 oC

J

3. Singl e Pulse

0

10

1

10

VDS, Drain-Source Voltage [V]

100 µs

1 ms

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

!

1. V

2. I

Notes :

D

= 10 V

GS

= 6.8 A

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

15

12

9

2

10

6

, Drain Current [A]

D

I

3

0

25 50 75 100 125 150 175

TC, Case Temperature ["]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

D=0.5

0

10

0.2

0.1

0.05

0.02

-1

10

0.01

(t), Thermal Response

JC

%

Z

-2

10

-5

10

sin g le p u lse

-4

10

t

, Square W ave Pulse Duration [sec]

1

-3

10

-2

10

!

Notes :

1. Z

(t) = 3.3 5 "/W M a x .

%

JC

2. D u ty F a c t o r , D =t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

%

JC

0

1

10

Figure 11. Transient Thermal Response Cur ve

12V

200nF

3mA

50K

Gate Charge Test Circuit & Waveform

Same Type

&

300nF

V

GS

Same Type

as DUT

DUT

V

DS

Resistive Switching Test Circuit & Waveforms

V

5V

GS

FQB13N06L / FQI13N06L

Q

g

Q

gs

Q

gd

Charge

5V

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

V

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv / dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQB13N06L / FQI13N06L

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

FQB13N06L / FQI13N06L

D2PAK

9.90

±0.20

(0.40)

1.40 ±0.20

1.27

±0.10

0.80 ±0.10

2.54 TYP 2.54 TYP

1.20 ±0.20

9.20 ±0.20

4.90 ±0.20

15.30 ±0.30

2.00 ±0.10

(0.75)

4.50 ±0.20

10.00 ±0.20 (8.00) (4.40)

+0.10

1.30

–0.05

0.10 ±0.15

2.40 ±0.20

0°~3°

+0.10

0.50

–0.05

2.54 ±0.30

10.00 ±0.20 (1.75)

(2XR0.45)

(7.20)

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

0.80 ±0.10

Package Dimensions

FQB13N06L / FQI13N06L

(Continued)

I2PAK

9.90 ±0.20

(0.40)

(1.46)

(0.94)

1.27 ±0.10 1.47 ±0.10

13.08 ±0.20

(45°)

0.80 ±0.10

2.54 TYP2.54 TYP

1.20 ±0.20

9.20 ±0.20

MAX 3.00

10.08 ±0.20 MAX13.40

0.50

4.50 ±0.20

+0.10 –0.05

+0.10

1.30

–0.05

2.40 ±0.20

10.00 ±0.20

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

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FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN

™

POP™ PowerTrench

®

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SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Datasheet FQI13N06L, FQB13N06L Datasheet (Fairchild Semiconductor)

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