Datasheet FQA6N70 Datasheet (Fairchild Semiconductor)

FQA6N70

700V N-Channel MOSFET

December 2000

QFET

QFETQFET

FQA6N70

TM

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQA6N70 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

, T

J

STG

T

L

Drain-Source Voltage 700 V Drain Current

Drain Current - Pulsed Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Derate above 25°C 1.22 W/°C

TO-3P

FQA Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 6.4A, 700V, R

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

= 1.5 Ω @ VGS = 10 V

DS(on)

D

!

"

!

"

!

" "

"

!

S

6.4 A

4.05 A

25.6 A

600 mJ

6.4 A

15.2 mJ

4.5 V/ns

152 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.82 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A2, December 2000

FQA6N70

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆BV / ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 700 V, VGS = 0 V

DS

V

= 560 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

700 -- -- V

-- 0.78 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.2 A

V

GS

= 50 V, ID = 3.2 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.16 1.5 Ω

-- 6.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 125 150 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 15 120 pF

-- 1100 1400 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

Turn-On Delay Time Turn-On Rise Time -- 70 150 ns

= 350 V, ID = 6.2 A,

V

DD

R

= 25 Ω

G

Turn-Off Delay Time -- 55 120 ns Turn-Off Fall Time -- 50 110 ns

g gs gd

Total Gate Charge Gate-Source Charge -- 6.5 -- nC Gate-Drain Charge -- 13 -- nC

V

= 560 V, ID = 6.2 A,

DS

V

= 10 V

GS

(Note 4, 5)

-- 25 60 ns

-- 30 40 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 27.2mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.2A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 6.4 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 25.6 A

= 0 V, IS = 6.4 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 2.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 6.2 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 340 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQA6N70

V

GS

Top : 1 5 .0 V

10.0 V

1

8.0 V

10

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

0

10

, Dra in Curre n t [A ]

D

I

-1

10

-1

10

0

10

※

Note s :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

4

3

],

Ω

[

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

※

℃

Note : T

= 25

0

048121620

J

ID, Drain Current [A]

1

10

℃

150

0

10

, Drain Current [A]

D

I

-1

10

246810

℃

25

℃

-55

※

Note s :

= 50V

1. V

DS

2. 250μs Pulse Test

VGS , Ga te- S ou rc e V olta ge [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 140V

VDS = 350V

VDS = 560V

※

Note : I

= 6.2 A

D

Rev. A2, December 2000

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Total Gate Charge [nC]

Typical Characteristics (Continued)

FQA6N70

1.2

1.1

1.0

, (N o r ma liz e d )

DSS

BV

0.9

Drain-Source Breakdown V oltage

0.8

-100 -50 0 50 100 150 200

※

No te s :

1. VGS = 0 V

2. ID = 250 μA

TJ, Junction Temp erature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

2

10

1

10

0

10

, Drain Current [A]

D

-1

I

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

10 ms

DC

※

Notes :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

1

10

2

10

VDS, Drain-Source Voltage [V]

100 µs

1 ms

10 µs

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Note s :

= 10 V

1. V

GS

= 3.1 A

2. I

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

7

6

5

3

10

4

3

, Drain Current [A]

2

D

I

1

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

(t), Thermal Response

JC

θ

Z

vs. Case Temperature

0

10

D=0.5

※

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

sin g le p u ls e

-4

10

-3

10

-2

10

Notes :

1 . Z

(t) = 0 .82 ℃/W M a x .

θ

JC

2 . D u ty F a c t o r , D = t 3 . TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

θ

JC

0

1

10

t1, Square W ave Pulse Duration [sec]

Figure 11. Transient Thermal Response Cur ve

Rev. A2, December 2000

12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

10V

V

DS

GS

300nF

Same Type

as DUT

DUT

Resistive Switching Test Circuit & Waveforms

GS

FQA6N70

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

2

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Rev. A2, December 2000

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQA6N70

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Rev. A2, December 2000

Package Dimensions

ø3.20 ±0.10

15.60 ±0.20

13.60 ±0.20

9.60 ±0.20

TO-3P

3.80 ±0.20

4.80 ±0.20

+0.15

1.50

–0.05

FQA6N70

13.90 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

5.45TYP

±0.30]

[5.45

5.45TYP

±0.30]

[5.45

12.76 ±0.20

19.90 ±0.20

3.50 ±0.20

23.40 ±0.20

16.50 ±0.30

18.70 ±0.20

1.40 ±0.20

+0.15

0.60

–0.05

Rev. A2, December 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™

2

E

CMOS™ FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™

HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench

®

QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Producti on This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.