Page 1
FQA46N15 / FQA46N15_F109
150V N-Channel MOSFET
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
August 2007
®
QFET
Features
• 50A, 150V, R
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 100pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
= 0.042Ω @VGS = 10 V
DS(on)
GSD
TO-3PN
FQA Series
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
S
Absolute Maximum Ratings
Symbol Parameter FQA46N15 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
, T
J
STG
T
L
Drain-Source Voltage 150 V
Drain Current - Continuous (TC = 25°C) 50 A
- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 250 W
- Derate above 25°C 1.67 W/°C
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 100°C) 35.3 A
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
200 A
650 mJ
50 A
25 mJ
6.0 V/ns
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQA46N15 / FQA46N15_F109 Rev. A1
Thermal Resistance, Junction-to-Case -- 0.6 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA46N15 FQA46N15 TO-3PN -- -- 30
FQA46N15
FQA46N15_F109 TO-3PN -- -- 30
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 45.6A, di/dt ≤300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 150 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C
Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 µA
V
= 120 V, TC = 150°C -- -- 10 µA
DS
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 25A -- 0.033 0.042 Ω
Forward Transconductance VDS = 40 V, ID = 25A (Note 4) -- 36 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 520 670 pF
Reverse Transfer Capacitance -- 100 130 pF
f = 1.0 MHz
Turn-O n Delay Time VDD = 75 V, ID = 45.6A,
R
= 25 Ω
Turn-O n Rise Time --
Turn-Off Delay Time --
G
(Note 4, 5)
Turn-Off Fall Time --
Total Gate Charge VDS = 120 V, ID = 45.6A,
= 10 V
V
Gate-Source Charge --
Gate-Drain Charge --
GS
(Note 4, 5)
-- 2500 3250 pF
--
35 80
320 650
210 430
200 410
--
85 110
15
41
-- nC
-- nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS =50A -- -- 1.5 V
Reverse Recovery Time VGS = 0 V, IS = 45.6 A,
/ dt = 100 A/µs (Note 4)
dI
Reverse Recovery Charge -- 0.55 --
Starting TJ = 25°C
DSS,
F
-- 130 -- ns
ns
ns
ns
ns
nC
µC
FQA46N15 / FQA46N15_F109 Rev. A1
2 www.fairchildsemi.com
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
-55℃
Notes :※
1. VDS = 40V
2. 250µ s Pulse Test
V
, Drain Current [A]
D
I
2
10
1
10
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
GS
0
10
VDS, Drain-Source Voltage [V]
Notes :※
1. 250µ s Pulse Test
= 25℃
2. T
C
1
10
2
10
1
10
175℃
25℃
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS , Gate-Source Voltage [ V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
0.20
2
10
0.15
VGS = 10V
[Ω],
0.10
DS(on)
R
0.05
Drain-Source On-Resistance
0.00
0 40 80 120 160 200 240
VGS = 20V
ID , Drain Current [A]
Note : T※J = 25℃
1
10
175℃
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0
25℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
6000
5000
4000
3000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
12
10
8
6
VDS = 30V
VDS = 75V
VDS = 120V
2000
Capacitance [pF]
1000
0
-1
10
C
0
10
VDS, Drain- Source Volt age [V]
FQA46N15 / FQA46N15_F109 Rev. A1
4
, Gate-Source Voltage [V]
2
GS
V
0
0 102030405060708090
Note : I※D = 45.6 A
10
1
Notes :※
1. VGS = 0 V
2. f = 1 MHz
rss
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
1.2
3.0
2.5
1.1
2.0
1.0
, (Normalized)
DSS
BV
0.9
Notes :※
1. VGS = 0 V
2. I
Drain-Source Breakdown Voltage
0.8
-100 - 50 0 50 100 150 200
TJ, Junction Temperature [oC]
= 250 µ A
D
1.5
, (Normalized)
1.0
DS(ON)
R
0.5
Drain-Source On-Resistance
0.0
-100 - 50 0 50 100 150 200
TJ, Junct ion Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
, Case Temperat ure [ ]℃
C
, Drain Current [A]
D
I
DS(on)
Notes :※
1. TC = 25 oC
= 175 oC
2. T
J
3. Singl e Pulse
1
10
10 µs
100 µs
1 ms
10 ms
DC
2
10
50
40
30
20
, Drain Current [A]
D
I
10
0
25 50 75 100 125 150 175
T
3
10
2
10
1
10
0
10
-1
10
0
10
Operation i n This Area
is Limi ted by R
VDS, Drain-Source Voltage [V]
Notes :※
1. VGS = 10 V
2. I
= 22.8 A
D
Figure 11. Transient Thermal Response Curve
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
(t), Thermal Response
0.01
θ JC
Z
-2
10
10
FQA46N15 / FQA46N15_F109 Rev. A1
-5
sin g le p uls e
-4
10
t1, Square W ave Pulse Duration [sec]
Notes :※
1. Z
(t) = 0.6 /W Ma x.℃
θ JC
2. D uty Fa cto r, D =t1/t
3. TJM - TC = PDM * Z
P
DM
-3
10
-2
10
-1
10
2
(t)
θ JC
t
1
t
2
0
10
1
10
4 www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
FQA46N15 / FQA46N15_F109 Rev. A1
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
FQA46N15 / FQA46N15_F109 Rev. A1
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
TO-3PN
FQA46N15 / FQA46N15_F109 Rev. A1
Dimensions in Millimeters
7 www.fairchildsemi.com
Page 8
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FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
9 www.fairchildsemi.com
FQA46N15 / FQA46N15_F109 Rev. A1
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