Datasheet FQA34N20L Datasheet (Fairchild Semiconductor)

FQA34N20L

200V LOGIC N-Channel MOSFET

June 2000

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

G

S

D

Absolute Maximum Ratings T

Symbol Parameter FQA34N20L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

, T

J

STG

T

L

Drain-Source Voltage 200 V Drain Current

Drain Current - Pulsed Gate-Source Voltage ± 20 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

- Continuous (T

- Derate above 25°C 1.67 W/°C

TO-3P

FQA Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 34A, 200V, R

• Low gate charge ( typical 55 nC)

• Low Crss ( typical 52 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct opration from logic drivers

G

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

= 0.075Ω @VGS = 10 V

DS(on)

D

!

"

!

"

!

" "

"

!

S

34 A 21 A

136 A

640 mJ

34 A 21 mJ

5.5 V/ns

210 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.6 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, June 2000

FQA34N20L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆BV / ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 200 V, VGS = 0 V

DS

V

= 160 V, TC = 125°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

200 -- -- V

-- 0.16 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 17 A

GS

= 5 V, ID = 17 A

V

GS

V

= 30 V, ID = 17 A

DS

(Note 4)

1.0 -- 2.0 V

0.057

--

0.060

0.075

0.080

-- 42 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 400 520 pF Reverse Transfer Capacitance -- 52 67 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 3000 3900 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 520 1050 ns Turn-Off Delay Time -- 170 350 n s Turn-Off Fall Time -- 370 75 0 n s Total Gate Charge Gate-Source Charge -- 9.9 -- nC Gate-Drain Charge -- 27 -- nC

= 100 V, ID = 34 A,

V

DD

= 25 Ω

R

G

= 160 V, ID = 34 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

-- 45 100 ns

-- 55 72 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.83mH, IAS = 34A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 34A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A

= 0 V, IS = 34 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 1.1 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 34 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 205 -- ns

(Note 4)

Rev. A, June 2000

Typical Characteristics

FQA34N20L

V

2

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3.0 V

1

0

-1

10

GS

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

0

10

1

10

, Drain Current [A]

D

I

10

VDS, Drai n -Source Voltag e [V]

0.25

0.20

0.15

],

Ω

[

0.10

DS(ON)

R

0.05

Drain-Source On-Resistance

0.00 0306090120

VGS = 5V

VGS = 10V

※

Note : T

℃

= 25

J

ID, Dra i n Current [A]

2

10

1

10

℃

150

0

10

, Dra in Curre n t [A ]

℃

25

D

I

-1

10

0246810

℃

-55

※

Note s :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

I

10

℃

150

℃

25

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD, Sou r c e-Drain voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

7000

6300

5600

4900

4200

3500

2800

2100

Capacitance [pF]

1400

700

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 40V

※

Note : I

= 34 A

D

Rev. A, June 2000

12

10

8

VDS = 100V

VDS = 160V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 20406080100120

QG, Tota l Gate Charge [n C]

Typical Characteristics (Continued)

FQA34N20L

1.2

1.1

1.0

, (Norm a liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Operation in This Area is Limited by R

2

10

1

10

, Dra in Cur re nt [A]

D

0

I

10

-1

10

0

10

DS(on)

1 ms

10 ms

DC

※

Notes :

1. TC = 25 oC

2. T

= 150 oC

J

3. Single Pulse

1

10

VDS, Drain-Source Voltage [V]

100 µs

10

2

= 0 V

GS

= 250 μA

D

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

※

Notes :

1. V

= 10 V

GS

2. I

= 17 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

40

30

20

, Drain Current [A]

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

0

10

D=0.5

0.2

-1

10

0.1

0.05

(t), Th erm al R es p on s e Z

0.02

JC

0.01

θ

-2

10

-5

10

sin g le p u ls e

-4

10

-3

10

t1, S q u a re W a v e P uls e D u ra tio n [se c ]

※

N o te s :

(t) = 0 .6 ℃/W Ma x .

1. Z

θ

JC

2. D u ty F a c t o r, D = t

3. TJM - TC = PDM * Z

P

DM

-2

10

-1

10

1/t2

(t)

θ

JC

t

1

t

2

0

10

1

10

Figure 11. Transient Thermal Response Cur ve

Rev. A, June 2000

Gate Charge Test Circuit & Waveform

FQA34N20L

12V

5V

200nF

3mA

V

GS

DS

5V

GS

Q

g

Q

gs

Q

gd

Charge

50K

Same Type

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

R

G

10V

t

p

Unclamped Inductive Switching Test Circuit & Waveforms

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

V

DD

DUT

1

----

E

=LI

E

=LI

AS

2

AS

(t)

I

D

t

p

BV

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Rev. A, June 2000

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQA34N20L

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Rev. A, June 2000

Package Dimensions

FQA34N20L

ø3.20 ±0.10

15.60 ±0.20

13.60 ±0.20

9.60 ±0.20

TO-3P

3.80 ±0.20

4.80 ±0.20

+0.15

1.50

–0.05

13.90 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

5.45TYP

±0.30]

[5.45

5.45TYP

±0.30]

[5.45

12.76 ±0.20

19.90 ±0.20

3.50 ±0.20

23.40 ±0.20

16.50 ±0.30

18.70 ±0.20

1.40 ±0.20

+0.15

0.60

–0.05

Rev. A, June 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

®

FAST

FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. F1