Datasheet FQA170N06 Datasheet (Fairchild Semiconductor)

FQA170N06

60V N-Channel MOSFET

FQA170N06

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/

Features

• 170A, 60V, R

• Low gate charge ( typical 220 nC)

• Low Crss ( typical 620 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.0056Ω @VGS = 10 V

DS(on)

DC converters, and high efficiency switching for power management in portable and battery operated products.

D

!

"

!

"

" "

"

!

S

G

S

D

Absolute Maximum Ratings T

TO-3P

FQA Series

= 25°C unless otherwise noted

C

!

G

Symbol Parameter FQA170N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 60 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

170 A 120 A

680 A Gate-Source Voltage ± 25 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

990 mJ

170 A

37.5 mJ

7.0 V/ns

375 W

- Derate above 25°C 2.5 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.4 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

FQA170N06

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.053 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 85 A

V

GS

= 30 V, ID = 85 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.0045 0.0056 Ω

-- 85 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 3100 4000 pF Reverse Transfer Capacitance -- 620 810 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 7200 9350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 700 1400 ns Turn-Off Delay Time -- 260 530 ns Turn-Off Fall Time -- 430 870 ns Total Gate Charge Gate-Source Charge -- 50 -- nC Gate-Drain Charge -- 100 -- nC

= 30 V, ID = 85 A,

V

DD

= 25 Ω

R

G

V

= 48 V, ID = 170 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 85 180 ns

-- 220 290 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 40µH, IAS = 170A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 170A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package

Maximum Continuous Drain-Source Diode Forward Current -- -- 170 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 680 A

= 0 V, IS = 170 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 315 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 170 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 100 -- ns

(Note 4)

Typical Characteristics

FQA170N06

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

2

10

Bottom : 4.5 V

, Drain Current [A]

D

I

1

10

-1

10

0

10

"

Notes :

1. 250#s Pulse Te st

2. T

= 25

C

VDS, Drain-Source Vo ltage [V]

7

6

],

$

5

[m

DS(ON)

R

4

Drain-Source On-Resistance

3

0 200 400 600 800

VGS = 10V

VGS = 20V

"

Note : T

ID, Dra in Current [A]

2

10

!

175

1

!

1

10

!

25

, Drain Current [A]

0

D

10

I

-1

10

246810

!

-55

"

Note s :

1. V

= 30V

DS

2. 250#s Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics.Figure 1. On-Region Char acteristics.

2

10

1

!

= 25

J

10

0

10

, Reverse Drain Current [A]

DR

I

!

175

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

!

25

"

Notes :

1. V

= 0V

GS

2. 250#s Pulse Tes t

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Ga te Voltage.

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

24000

20000

16000

12000

8000

Capacitance [pF]

4000

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

oss

C

iss

C

rss

0

10

"

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 40 80 120 160 200 240

QG, Tota l Gate Charge [n C]

VDS = 30V

VDS = 48V

"

Note : I

= 170A

D

Figure 5. Capacitance Characteristics. Figure 6. Gate -Charge Characteristics.

Typical Characteristics (Continued)

FQA170N06

1.2

1.1

1.0

, (Norm a liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

"

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs Temperature.

Ope r ation in T his Area is Limited by R

"

Notes :

1. T

2. T

3. Single Pulse

0

10

= 25 oC

C

= 175 oC

J

DS(on)

1 ms

10 ms

DC

1

10

3

10

2

10

, Drain Current [A]

1

D

I

10

0

10

-1

10

VDS, Drain-Source Voltage [V]

= 0 V

GS

= 250 #A

D

100#s

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

"

1. V

2. I

Notes :

GS

= 85 A

D

= 10 V

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature.

180

150

#

10

s

2

10

120

90

60

, Drain Current [A]

D

I

30

0

Limited by Package

25 50 75 100 125 150 175

TC, Case Temperature [!]

Figure 9. Maximum Safe Op erating Area. Figure 10. M aximum Drain Current

vs Case Temperature.

D=0.5

"

-1

10

0.2

0.1

N o te s :

1. Z

(t) = 0.4 !/W M a x .

%

JC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

1/t2

(t)

%

JC

0.05

P

0.02

(t), Therm al Response

JC

-2

0.01

10

%

Z

-5

10

single pulse

-4

10

-3

10

-2

10

DM

t

1

t

2

-1

10

0

10

1

10

t1, S q u a re W av e P u ls e D u ra tio n [s ec ]

Figure 11. Transient Thermal Response Curve.

Rev. A1. May 2001

12V

200nF

3mA

50K&

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQA170N06

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

2

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQA170N06

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

ø3.20 ±0.10

15.60 ±0.20

13.60 ±0.20

9.60 ±0.20

TO-3P

3.80 ±0.20

4.80 ±0.20

+0.15

1.50

–0.05

FQA170N06

13.90 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

5.45TYP

±0.30]

[5.45

12.76 ±0.20

5.45TYP

±0.30]

[5.45

19.90 ±0.20

3.50 ±0.20

23.40 ±0.20

16.50 ±0.30

18.70 ±0.20

1.40 ±0.20

+0.15

0.60

–0.05

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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2

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.