Datasheet FQA12P20 Datasheet (Fairchild Semiconductor)

FQA12P20

200V P-Channel MOSFET

May 2000

QFET

QFETQFET

TM

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• -12.6A, -200V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.47Ω @VGS = -10 V

DS(on)

suited for high efficiency switching DC/DC converters.

S

!!!!

●●●●

▶▶▶▶

▲▲▲▲

●●●●

!!!!

D

G

S

D

Absolute Maximum Ratings T

TO-3P

FQA Series

= 25°C unless otherwise noted

C

G

!!!!

Symbol Parameter FQA12P20 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage -200 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-12.6 A

-7.9 A

-50.4 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

810 mJ

-12.6 A

15 mJ

-5.5 V/ns 150 W

- Derate above 25°C 1.2 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.83 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. B, May 2000

FQA12P20

Elerical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -200 V, VGS = 0 V

DS

V

= -160 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-200 -- -- V

-- - -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -6.3 A

V

GS

= -40 V, ID = -6.3 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 0.36 0.47 Ω

-- 6.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 190 250 pF Reverse Transfer Capacitance -- 3 0 40 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 920 1200 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 195 400 ns Turn-Off Delay Time -- 40 90 ns Turn-Off Fall Time -- 60 13 0 ns Total Gate Charge Gate-Source Charge -- 8.1 -- nC Gate-Drain Charge -- 16 -- nC

= -100 V, ID = -11.5 A,

V

DD

= 25 Ω

R

G

V

= -160 V, ID = -11.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

-- 20 50 ns

-- 31 40 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 7.65mH, IAS = -12.6A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -11.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- -12.6 A Maximum Pulsed Drain-Source Diode Forward Current -- -- -50.4 A

= 0 V, IS = -12.6 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 1.44 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -11.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -5.0 V

-- 180 -- ns

(Note 4)

Rev. B, May 2000

Typical Characteristics

V

FQA12P20

10

, Drain Current [A]

D

-I

10

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

1

-6.5 V

-6.0 V Bottom : -5.5 V

0

-1

10

GS

0

10

-VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

1

10

0

10

, Drain Current [A]

D

-I

-1

10

246810

℃

150

℃

25

-VGS , Gate-Source Voltage [V]

※

℃

-55

Notes :

1. V

= -40V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2.0

1.5

],

Ω

[

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0 0 10203040

VGS = - 10V

VGS = - 20V

※

Note : T

℃

= 25

J

-ID , Drai n Curren t [A]

1

10

0

10

, Reve rs e D ra in Current [A ]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

℃

150

-VSD , Source-Drain Voltage [V]

※

℃

25

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

2400

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 5 10 15 20 25 30 35

QG, Tota l Gate Charge [n C]

VDS = -40V

VDS = -100V

VDS = -160V

※

Note : I

= -11.5 A

D

Rev. B, May 2000

Typical Characteristics (Continued)

FQA12P20

1.2

1.1

1.0

, (Norm a liz e d )

DSS

※

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

2

10

1

10

0

, Dra i n Curre nt [A]

10

D

-I

-1

10

0

10

Operation in This Area is Limited by R

DS(on)

1 ms

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

-VDS, Drain-Source Voltage [V]

10

100 µs

2

GS

= -250

D

= 0 V

2.5

2.0

1.5

, (No rmaliz e d )

1.0

DS(ON)

R

0.5

μ

A

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

※

Notes :

= -10 V

1. V

GS

2. I

= -5.75 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

15

12

9

6

, Drain Current [A]

D

-I

3

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

0

10

D=0.5

※

0.2

-1

0.1

10

N o te s :

1. Z

(t) = 0.83 ℃/W M ax.

θ

JC

2. D u ty F a c t o r, D = t

3. TJM - TC = PDM * Z

1/t2

(t)

θ

JC

0.05

P

0.02

(t), Therm al Response

0.01

JC

θ

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

DM

t

1

t

2

-1

10

0

10

1

10

t1, S q u a re W a v e P u lse D ura tio n [s e c ]

Figure 11. Transient Thermal Response Cur ve

Rev. B, May 2000

Gate Charge Test Circuit & Waveform

FQA12P20

V

GS

DS

GS

-10V

V

GS

10%

Q

gs

t

d(on)tr

Q

g

Q

gd

Charge

t

on

t

d(off)

t

off

t

f

12V

200nF

-3mA

Same Type

50K

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

R

L

V

DS

V

GS

R

G

L

V

DD

-10V

DUT

90%

V

DS

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

I

IDI

D

V

DD

BV

DD

I

AS

DSS

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

t

p

I

(t)

D

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Rev. B, May 2000

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

V

DS

DUT

I

SD

Driver

R

G

V

GS

_

L

LL

Compliment of DUT

(N-Channel)

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQA12P20

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

Body Diode Reverse Current

I

RM

IFM, Body Diode Forward Current

V

SD

Body Diode

Forward Voltage Drop

Body Diode Recoverydv/dt

di/dt

10V

V

DD

Rev. B, May 2000

Package Dimensions

FQA12P20

ø3.20 ±0.10

15.60 ±0.20

13.60 ±0.20

9.60 ±0.20

TO-3P

3.80 ±0.20

4.80 ±0.20

+0.15

1.50

–0.05

13.90 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

5.45TYP

±0.30]

[5.45

5.45TYP

±0.30]

[5.45

12.76 ±0.20

19.90 ±0.20

3.50 ±0.20

23.40 ±0.20

16.50 ±0.30

18.70 ±0.20

1.40 ±0.20

+0.15

0.60

–0.05

Rev. B, May 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

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FAST

FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ P ACMAN™ POP™

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Quiet Series™ SILENT SWITCHER SMART ST ART™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

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SyncFET™ TinyLogic™ UHC™ VCX™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G