Page 1
FPN430
FPN430A
FPN430 / FPN430A
C
B
E
TO-226
PNP Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 2.0 A continuous.
Sourced from Process PB.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector-Emitter V ol tage 30 V
Collector-Base Voltage 35 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 2.0 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FPN430 / FPN430A
P
D
R
θ
JC
R
θ
JA
1999 Fairchild Semiconductor Corporation
Total Device Dissipation 1.0 W
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125
°C/W
°C/W
Page 2
PNP Low Saturation Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 30 V
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current VCB = 30 V, I
Emitter Cutoff Current VEB = 4.0 V, I
DC Current Gain
Collector-Emitter S aturation Voltage
)
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
= 0
E
= 30 V, I
V
CB
= 100 mA, VCE = 2.0 V
I
C
I
= 1.0 A, VCE = 2.0 V
C
= 2.0 A, VCE = 2.0 V
I
C
= 1.0 A, IB = 100 mA
I
C
= 0, TA = 100°C
E
= 0 100 nA
C
430
430A
430
35 V
5.0 V
100
250
60
40
430A
I
= 2.0 A, IB = 200 mA
Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.25 V
)
C
Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V
100
10
500
450
800
nA
µ
mV
mV
mV
A
FPN430 / FPN430A
SMALL SIGNAL CHARACTERISTICS
C
obo
F
T
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 25 pF
Transition Frequency IC = 100 mA, VCE = 5.0 V,
f = 100 MHz
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
100 MHz
Page 3
T ypical Characteristics
FPN430 / FPN430A
PNP Low Saturation Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Curren t
1.6
β = 10
1.4
1.2
1
0.8
0.6
0.4
0.2
0.001 0.01 0.1 1 10
BESAT
V -BASE-EMITTER SATURATION VOLTAGE(V)
- 40 °C
125 °C
I - COLLECTOR CURRENT ( A)
C
25 °C
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8
0.6
0.4
0.2
0
0.01 0.1 1 10
CESAT
V - COL LECTOR-E MITTER VOL TAGE (V )
I - COLLECTOR CU RR ENT (A)
C
125 °C
25°C
- 40°C
Base-Emitter On Voltage vs
Collector Current
1.6
V = 2.0V
ce
1.4
1.2
1
0.8
0.6
0.4
0.2
BEON
0.0001 0.001 0.01 0.1 1 10
V - BA SE-EM I T TER O N VOLTAGE (V)
I - COLLECTOR CURRENT ( A)
C
- 40 °C
125 °C
25 °C
Input/Output Capacit ance vs
Reverse Bias Voltage
120
100
80
60
40
CAPACITANCE (pf)
20
0
0.1 0.5 1 10 20 50 100
C
ibo
C
obo
V - COLLECTOR VOLTAGE (V)
CE
V = 2.0V
f = 1.0MHz
ce
Current Gain vs Collector Current
600
V = 2.0V
ce
500
400
300
200
FE
H - CURRENT GAIN
100
0
0.0001 0.001 0.01 0.1 1 10
125 °C
25°C
- 40°C
I - COLLECTOR CU RRENT ( A)
C
P ow e r D is s ipa t ion vs
Ambient Te mperat ure
1
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
TO-226
TEM P E RATU RE ( C)
°
Page 4
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Rev. G
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