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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Ordering number:EN4697
FP201
Features
· Composite type with 2 transistors contained in the
PCP package currently in use, improving the mounting efficiency greatly.
· The FP201 is formed with two chips, being equivalent to the 2SC4504, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
1:Base (NPN TR)
2:Collector (NPN TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (NPN TR)
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
Mounted on ceramic board (250mm2×0.8mm) 1unit
C
Mounted on ceramic board (250mm
T
Package Dimensions
unit:mm
2107A
[FP201]
2
×0.8mm)
1:Base (NPN TR)
2:Collector (NPN TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (NPN TR)
SANYO:PCP5
(Bottom view)
03V
02V
3V
003Am
006Am
57.0W
0.1W
˚C
˚C
Electrical Characteristics at Ta=25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCDh
ecnereffiDegatloVrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
hEF1VECI,V5=
hEF2VECI,V5=
EF
EB
V
OBC
V
OBE
-lams(1
V
)egral/l
-egral(
V
llams
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V02=
BC
BE
EC
EC
EC
BC
BC
0=0.1Aµ
E
I,V2=
0=0.5Aµ
C
Am05=06002
C
Am003=02
C
I,V5=
Am05=7.059.0
C
I,V5=
Am001=0.351Vm
C
I,V5=
Am05=2.2zHG
C
zHM1=f,V01=9.2Fp
zHM1=f,V01=6.2Fp
I,Am002=
Am02=2.05.0V
B
I,Am002=
Am02=9.02.1V
B
nimpytxam
Note:The specifications shown above are for each individual transistor.
However, the DC Current Gain Ratio and Base Emitter to Voltage Difference are for the paired transistors.
Marking:201
52098HA (KT)/41594HO (KOTO) BX-0511 No.4697-1/3
sgnitaR
tinU
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FP201
No.4697-2/3
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FP201
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4697-3/3
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