Datasheet fnb41060 Datasheet

FNB41060

Smart Power Module

FNB41060 Smart Power Module

January 2010

TM

Motion-SPM

Features

• 600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection

• Easy PCB layout due to built-in bootstrap diode and VS output

• Divided negative dc-link terminals for inverter current sensing applications

• Single-grounded power supply due to built-in HVIC

• Built-in thermistor for over-temperature monitoring

• Isolation rating of 2000Vrms/min.

Applications

• AC 100V ~ 253V three-phase inverter drive for small power ac motor drives

• Home appliances applications like air conditioner and washing machine

General Description

It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out protection, short-circuit protection, and temperature monitoring. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals.

Additional Information

For further infomation, please see AN-9070 and FEB306-001 in http://www.fairchildsemi.com

Figure 1.

FNB41060 Rev. C

Integrated Power Functions

• 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to UV (Low-side supply) and SC faults

• Input interface: 3.3/5V CMOS compatible, Schmitt trigger input

Pin Configuration

Top View

VTH(1)

RTH(2)

P(3)

U(4)

Case Temperature (TC)

Detecting Point

V(5)

W(6)

NU(7)

NV(8)

NW(9)

V

(26)

V

(26)

B(U)

V

(25)

V

(25)

S(U)

V

(24)

V

(24)

B(V)

V

(23)

V

(23)

S(V)

V

(22)

V

(22)

B(W)

V

(21)

V

(21)

S(W)

IN

(20)

IN

(20)

(UH)

IN

(19)

IN

(19)

(VH)

IN

(18)

IN

(18)

(WH)

V

(17)

V

(17)

CC(H)

V

(16)

V

(16)

CC(L)

COM(15)

IN

(14)

IN

(14)

(UL)

IN

(13)

IN

(13)

(VL)

IN

(12)

IN

(12)

(WL)

VFO(11)

CSC(10)

FNB41060 Smart Power Module

FNB41060 Rev. C

Figure 2.

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Pin Descriptions

Pin Number Pin Name Pin Description

1 V

2 R

TH

3 P Positive DC–Link Input

4 U Output for U Phase

5 V Output for V Phase

6 W Output for W Phase

7 N

8 N

9 N

10 C

11 V

12 IN

13 IN

14 IN

U

V

W

SC

FO

(WL)

(VL)

(UL)

15 COM Common Supply Ground

16 V

17 V

18 IN

19 IN

20 IN

21 V

22 V

23 V

24 V

25 V

26 V

CC(L)

CC(H)

(WH)

(VH)

(UH)

S(W)

B(W)

S(V)

B(V)

S(U)

B(U)

Thermistor Bias Voltage

Series Resistor for the Use of Thermistor (Temperature Detection)

Negative DC–Link Input for U Phase

Negative DC–Link Input for V Phase

Negative DC–Link Input for W Phase

Capacitor (Low-pass Filter) for Short-Current Detection Input

Fault Output

Signal Input for Low-side W Phase

Signal Input for Low-side V Phase

Signal Input for Low-side U Phase

Low-Side Common Bias Voltage for IC and IGBTs Driving

High-Side Common Bias Voltage for IC and IGBTs Driving

Signal Input for High-side W Phase

Signal Input for High-side V Phase

Signal Input for High-side U Phase

High-side Bias Voltage Ground for W Phase IGBT Driving

High-side Bias Voltage for W Phase IGBT Driving

High-side Bias Voltage Ground for V Phase IGBT Driving

High-side Bias Voltage for V Phase IGBT Driving

High-side Bias Voltage Ground for U Phase IGBT Driving

High-side Bias Voltage for U Phase IGBT Driving

FNB41060 Smart Power Module

FNB41060 Rev. C

3 www.fairchildsemi.com

Internal Equivalent Circuit and Input/Output Pins

(26) V

(25) V

(24) V

(23) V

(22) V

(21) V

(20) IN

(19) IN

(18) IN

(17) V

(16) V

(15) COM

(14) IN

(13) IN

(12) IN

(11) V

(10) C

B(U)

S(U)

B(V)

S(V)

B(W)

S(W)

(UH)

(VH)

(WH)

CC(H)

CC(L)

(UL)

(VL)

(WL)

FO

SC

UVB

UVS

VVB

VVS

WVB

WVS

IN(UH)

IN(VH)

IN(WH)

VCC

COM

VCC

COM

IN(UL)

IN(VL)

IN(WL)

VFO

C(SC)

OUT(UH)

UVS

OUT(VH)

VVS

OUT(WH)

WVS

OUT(UL)

OUT(VL)

OUT(WL)

Thermister

V

TH

RTH(2)

P (3)

U(4)

V (5)

W(6)

NU(7)

NV(8)

NW(9)

FNB41060 Smart Power Module

(1)

Note:

1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT.

2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions.

3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.

Figure 3.

FNB41060 Rev. C

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FNB41060 Smart Power Module

Absolute Maximum Ratings (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Symbol Parameter Conditions Rating Units

V

PN

V

PN(Surge)

V

CES

I

O,25

I

O,100

I

pk

P

T

Note:

1. Sinusoidal PWM at VPN=300V, VCC=VBS=15V, TJ＜ 150°℃, FSW=20kHz, MI=0.9, PF=0.8

2. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.

Supply Voltage Applied between P- NU, NV, N

Supply Voltage (Surge) Applied between P- NU, NV, N

W

450 V

500 V

Collector-emitter Voltage 600 V

Output Phase Current TC = 25°C, TJ ＜ 150°C (Note 1) 10 A

Output Phase Current TC = 100°C, TJ ＜ 150°C (Note 1) 5 A

Output Peak Phase Current TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse Width 15 A

Collector Dissipation TC = 25°C per One Chip 32 W

C

Operating Junction Temperature (Note 2) -40 ~ 150 °C

J

Control Part

Symbol Parameter Conditions Rating Units

V

CC

V

BS

V

FO

I

FO

V

SC

Control Supply Voltage Applied between V

High-side Control Bias Voltage

Input Signal Voltage Applied between IN

IN

Applied between V V

- V

B(W)

S(W)

IN

, IN

(WL)

- COM

(VL)

CC(H)

B(U)

(UH)

, V

- COM 20 V

CC(L)

- V

, IN

S(U)

(VH)

, V

, IN

B(V)

(WH)

- V

, IN

,

S(V)

,

-0.3~VCC+0.3 V

(UL)

20 V

Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V

Fault Output Current Sink Current at VFO Pin 1 mA

Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V

Bootstrap Diode Part

Symbol Parameter Conditions Rating Units

V

RRM

I

F

I

FP

T

Maximum Repetitive Reverse Voltage 600 V

Forward Current TC = 25°C 0.5 A

Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1 A

Operating Junction Temperature -40 ~ 150 °C

J

Total System

Symbol Parameter Conditions Rating Units

V

PN(PROT)

T

STG

V

ISO

Self Protection Supply Voltage Limit (Short Circuit Protection Capability)

VCC = VBS = 13.5 ~ 16.5V TJ = 150°C, Non-repetitive, less than 2ms

400 V

Storage Temperature -40 ~ 125 °C

Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection

2000 V

Pins to heat sink plate

Thermal Resistance

Symbol Parameter Conditions Min. Typ. Max. Units

R

th(j-c)Q

R

th(j-c)F

Note:

3. For the measurement point of case temperature(TC), please refer to Figure 2.

Junction to Case Thermal Resistance

Inverter IGBT part (per 1/6 module) - - 3.8 °C/W

Inverter FWD part (per 1/6 module) - - 4.8 °C/W

rms

FNB41060 Rev. C

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FNB41060 Smart Power Module

Electrical Characteristics (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Symbol Parameter Conditions Min. Typ. Max. Units

V

CE(SAT)

V

F

HS t

t

C(ON)

t

C(OFF)

LS t

t

C(ON)

t

C(OFF)

I

CES

Note:

4. tON and t

OFF

For the detailed information, please see Figure 4.

Collector-Emitter Saturation Voltage

VCC = VBS = 15V VIN = 5V

IC = 5A, TJ = 25°C - 1.5 2.0 V

FWD Forward Voltage VIN = 0V IF = 5A, TJ = 25°C - 1.5 2.0 V

Switching Times VPN = 300V, VCC = VBS = 15V, IC = 5A

ON

TJ = 25°C VIN = 0V « 5V, Inductive Load

OFF

(Note 4)

0.45 0.75 1.25 ms

- 0.20 0.45 ms

- 0.70 1.20 ms

- 0.15 0.40 ms

t

rr

ON

OFF

VPN = 300V, VCC = VBS = 15V, IC = 5A TJ = 25°C VIN = 0V « 5V, Inductive Load (Note 4)

- 0.15 - ms

0.35 0.65 1.15 ms

- 0.15 0.40 ms

- 0.65 1.15 ms

- 0.15 0.40 ms

t

rr

Collector-Emitter

VCE = V

Leakage Current

include the propagation delay time of the internal drive IC. t

CES

C(ON)

and t

are the switching time of IGBT itself under the given gate driving condition internally.

C(OFF)

- 0.15 - ms

- - 1 mA

V

IN( ON)

10 0% I

V

CE

V

IN

t

ON

10 % I

(a) turn -on

C

90 % I

C

t

C( ON)

C

10 0 % I

rr

10 % V

C

I

C

V

IN

t

OFF

V

CE

IN( OFF )

I

C

10 % V

t

C( OF F)

CE

V

10 % I

CE

C

(b) turn-off

Figure 4. Switching Time Definition

FNB41060 Rev. C

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Switching Loss (Typical)

FNB41060 Smart Power Module

Inductive Load, VPN=300V, VCC=15V, TJ=25℃

400

350

300

[uJ]

SW

250

200

150

100

SWITCHING LOSS, E

50

0

0 1 2 3 4 5

IGBT Turn-ON, E

IGBT Turn-OFF, E

FRD Turn-OFF, E

on

off

rec

COLLECTOR CURRENT, Ic [AMPERES]

Inductive Load, VPN=300V, VCC=15V, TJ=150℃

400

350

300

[uJ]

SW

250

200

150

100

SWITCHING LOSS, E

50

0

IGBT Turn-ON, E

IGBT Turn-OFF, E

FRD Turn-OFF, E

0 1 2 3 4 5

COLLECTOR CURRENT, Ic [AMPERES]

on

off

rec

Figure 5. Switching Loss Characteristics

Control Part

Symbol Parameter Conditions Min. Typ. Max. Units

I

QCCH

I

QCCL

I

PCCH

I

PCCL

I

V

SC(ref)

UV

t

V

IN(ON)

V

IN(OFF)

R

Note:

5. Short-circuit current protection is functioning only at the low-sides.

6. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application.

Quiescent VCC Supply Current

Operating VCC Supply Current

V

CC(H)

V

CC(L)

V

CC(H)

= 15V, IN

= 15V, f

(UH,VH,WH)

(UL,VL, WL)

= 20kHz,

PWM

= 0V V

duty=50%, applied to one PWM

- COM - - 0.10 mA

CC(H)

- COM - - 2.65 mA

CC(L)

V

- COM - - 0.15 mA

CC(H)

signal input for High-side

V

= 15V, f

CC(L)

duty=50%, applied to one PWM

= 20kHz,

PWM

V

- COM - - 3.65 mA

CC(L)

signal input for Low-side

Quiescent VBS Supply

QBS

Current

Operating VBS Supply

PBS

Current

VBS = 15V, IN

(UH, VH, WH)

VCC = VBS = 15V, f duty=50%, applied to one PWM

= 0V V

= 20kHz,

PWM

- V

, V

-

B(U)

S(U)

B(W)

S(U)

B(W)

- V

, V

- V

B(V)

S(W)

B(V)

S(W)

V

, V

S(V)

V

- V

B(U)

V

, V

S(V)

- - 0.30 mA

-

- - 2.00 mA

signal input for High-side

Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kW to 5V Pull-up 4.5 - - V

FOH

FOL

VSC = 1V, VFO Circuit: 4.7kW to 5V Pull-up - - 0.5 V

Short Circuit Trip Level VCC = 15V (Note 5) 0.45 0.5 0.55 V

CCD

Supply Circuit

CCR

Under-Voltage Protection

BSD

BSR

Fault-out Pulse Width 30 - - ms

FOD

ON Threshold Voltage Applied between IN

OFF Threshold Voltage 0.8 - - V

Resistance of

TH

Thermister

Detection Level 10.5 - 13.0 V

Reset Level 11.0 - 13.5 V

Detection Level 10.0 - 12.5 V

Reset Level 10.5 - 13.0 V

, IN

,

(UH)

(VH)

(WH)

(UL)

IN

- COM

(WL)

(VL)

- - 2.6 V

@TTH=25°C, (Note 6) - 47 - kW

@TTH=100°C - 2.9 - kW

FNB41060 Rev. C

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600

550

500

450

400

R-T Curve

20

16

12

R-T Curve in 50 ~ 125℃ ℃

350

300

250

200

Resistance[kW]

150

8

4

Resistance[kW]

0

50 60 70 80 90 100 110 120

Temperature [ ]℃

100

50

0

-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120

Temperature TTH[ ]℃

Figure. 6. R-T Curve of The Built-in Thermistor

FNB41060 Smart Power Module

Bootstrap Diode Part

Symbol Parameter Conditions Min. Typ. Max. Units

V

F

t

rr

Note:

7. Built in bootstrap diode includes around 15 Ω resistance characteristic.

Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V

Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns

Built in Bootstrap Diode VF-IF Characteristic

1.0

0.9

0.8

0.7

0.6

0.5

[A]

F

I

0.4

0.3

0.2

0.1

0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

TC=25℃

VF [V]

FNB41060 Rev. C

Figure 7. Built in Bootstrap Diode Characteristic

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Recommended Operating Conditions

FNB41060 Smart Power Module

Symbol Parameter Conditions

V

dVCC/dt,

dVBS/dt

t

f

PWM

V

P

WIN(ON)

P

WIN(OFF)

Note:

8. SPM might not make response if input pulse width is less than the recommanded value.

Note:

9. The allowable output current value may be different from the actual application.

Supply Voltage Applied between P - NU, NV, N

PN

Control Supply Voltage Applied between V

CC

High-side Bias Voltage Applied between V

BS

, V

CC(H)

B(U)-VS(U)

CC(L)

, V

Control supply variation -1 - 1 V/ms

dead

Blanking Time for

For Each Input Signal 1.5 - - ms

Preventing Arm-short

PWM Input Signal -40°C ＜ TJ ＜ 150°C - - 20 kHz

Voltage for Current

SEN

Sensing

Minimun Input Pulse

Applied between NU, NV, N (Including surge voltage)

W

- COM

(Note 8) 0.5 - - ms

Width

10

]

9

rms

8

[A

Orms

7

6

5

4

3

2

1

Allowable Output Current, I

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140

Allowable Maximum Output Current

VDC=300V, VCC=VBS=15V

TJ ＜ 150℃ , TC ≤ 125℃

M.I.=0.9, P.F.=0.8 Sinusoidal PWM

fSW=15kHz

Case Temperature, TC [℃]

Value

Units

Min. Typ. Max.

W

-COM 13.5 15 16.5 V

B(V)-VS(V),VB(W)-VS(W)

fSW=5kHz

- 300 400 V

13.0 15 18.5 V

-4 4 V

0.5 - -

Figure 8. Allowable Maximum Output Current

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FNB41060 FNB41060 SPM26-AA - - 12

FNB41060 Rev. C

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Mechanical Characteristics and Ratings

FNB41060 Smart Power Module

Parameter Conditions

Device Flatness Note Figure 9 0 - +120 mm

Mounting Torque Mounting Screw: - M3

Note Figure 10

Weight - 11 - g

Figure 9. Flatness Measurement Position

Recommended 0.7N•m 0.6 0.7 0.8 N•m

Recommended 7.1kg•cm 6.2 7.1 8.1 kg•cm

Min. Typ. Max.

Limits

Units

Pre - Screwing : 1→2

2

Final Screwing : 2→1

1

Note:

10. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.

11. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged.

The Pre-Screwing torque is set to 20~30% of maximum torque rating.

Figure 10. Mounting Screws Torque Order

2

FNB41060 Rev. C

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Time Charts of SPMs Protective Function

Input Signal

FNB41060 Smart Power Module

Protection

Circuit State

Control

UV

RESET

CCR

a1

Supply Voltage

Output Current

Fault Output Signal

a1 : Control supply voltage rises: After the voltage rises UV

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under voltage detection (UV

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UV

a7 : Normal operation: IGBT ON and carrying current.

CCR

CCD

).

Figure 11. Under-Voltage Protection (Low-side)

SET RESET

UV

CCD

a3

a2

, the circuits start to operate when next input is applied.

CCR

a4

a5

a6

a7

Input Signal

Protection

Circuit State

Control

Supply Voltage

UV

BSR

RESET

b1

b2

UV

SET RESET

BSD

b3

b4

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: After the voltage reaches UV

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under voltage detection (UV

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UV

b6 : Normal operation: IGBT ON and carrying current

BSR

BSD

)

).

, the circuits start to operate when next input is applied.

BSR

Figure 12. Under-Voltage Protection (High-side)

b5

b6

FNB41060 Rev. C

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FNB41060 Smart Power Module

Lower arms

control input

c6

c7

Protection

Circuit state

Internal IGBT

Gate-Emitter Voltage

Output Current

Sensing Voltage

SET

c3

c2

SC

c1

RESET

c4

c8

SC Reference Voltage

of the shunt

resistance

CR circuit time constant delay

Fault Output Signal

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard IGBT gate interrupt.

c4 : IGBT turns OFF.

c5 : Input “L” : IGBT OFF state.

c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.

c7 : IGBT OFF state

c5

Figure 13. Short-Circuit Current Protection (Low-side Operation only)

Input/Output Interface Circuit

5V-Line (MCU or Control p ower)

RPF=10kΩ

IN

MCU

Note:

1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal.

2) The logic input is compatible with standard CMOS outputs.

V

FO

CO M

Figure 14. Recommended CPU I/O Interface Circuit

FNB41060 Rev. C

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SPM

, ,

(UH)IN(VH)

, ,

(UL)IN(VL )

IN

(WH )

(WL)

FNB41060 Smart Power Module

M

C U

Gating UH

Gating VH

Gating WH

Fault

Gating UL

Gating VL

Gating WL

(26) V

B(U)

CBSC

BSC

(25) V

C

SPC15

S(U)

(20) IN

(UH)

(24) V

B(V)

BSC

(23) V

S(V)

(19) IN

(VH)

(22) V

B(W)

BSC

(21) V

S(W)

(18) IN

(WH)

(17) V

CC(H)

(15) COM

(16) V

CC(L)

(11) V

FO

(14) IN

(UL)

(13) IN

(VL)

(12) IN

(WL)

(10) C

SC

(1) V

TH

THERMISTOR

(2) R

TH

R

S

C

R

S

R

S

BS

C

BS

15V line

CPSC

PSCPS

C

SP15

C

5V line

R

PF

C

SPC05

C

CPSC

SP05

C

PS

SC

R

F

R

TH

R

S

C

PF

C

BPF

R

S

R

S

R

S

VB(U)

VS(U)

IN(UH)

VB(V)

VS(V)

IN(VH)

VB(W)

VS(W)

IN(WH)

VCC

COM

VCC

VFO

IN(UL)

IN(VL)

IN(WL)

COM

CSC

HVIC

LVIC

OUT(UH)

VS(U)

OUT(VH)

VS(V)

OUT(WH)

VS(W)

OUT(UL)

OUT(VL)

OUT(WL)

P (3)

U (4)

V (5)

W (6)

NU(7)

NV(8)

NW(9)

M

V

C

DC

DCS

R

SU

R

SV

R

SW

Input Signal for

Short-Circuit Protection

Temp. Monitoring

U-Phase Current V-Phase Current

W-Phase Current

Note:

1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. Please refer

to Figure14.

4) C

of around 7 times larger than bootstrap capacitor CBS is recommended.

SP15

5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention

of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. (Recommended RS=100 Ω , CPS=1nF)

6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.

7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2ms.

8) Each capacitor should be mounted as close to the pins of the SPM as possible.

9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive

capacitor of around 0.1~0.22mF between the P&GND pins is recommended.

10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W)

12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and

frequency characteristics in C

BSC

.

13) For the detailed information, please refer to the AN-9070 and FEB306-001.

Figure 15. Typical Application Circuit

FNB41060 Rev. C

13 www.fairchildsemi.com

Detailed Package Outline Drawings

±0.10

17-0.50

FNB41060 Smart Power Module

(2.609)

2-R1.60

PKG.C

(2-0.70)

±0.50

11.10

16.891

19x1.778

±0.30

39.00

±0.300

16.891

=33.782

±0.50

±0.30

±0.50

6.00

±0.05

2.05

±0.50

23.00

13.00013.000

PKG.C

2

°

~6

±0.50

27.23

°

±0.15

10.00

PKG.C

36.70

±0.15

(R0.50)

4.50

11.10

±0.30

±0.50

0

5

1

.

0

.

0

+

0 5

. 0

FNB41060 Rev. C

(1.50)

9-0.60

±0.10

13x2.54

15.240

±0.30

±0.300

PKG.C

=33.020

17.780

±0.30

(1.720)

(2-0.50)

±0.50

6.00

±0.50

11.10

14 www.fairchildsemi.com

®

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficientMax™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST

®

® ®

®

FastvCore™ FETBench™ FlashWriter

®

* FPS™ F-PFS™

FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC OPTOPLANAR

®

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™

®

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

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SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

*

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®

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I47