Datasheet fna41060 Datasheet

FNA41060

Smart Power Module

FNA41060 Smart Power Module

January 2010

TM

Motion-SPM

Features

• 600V-10A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection

• Easy PCB layout due to built-in bootstrap diode and VS out­put

• Divided negative dc-link terminals for inverter current sensing
applications

• Single-grounded power supply due to built-in HVIC

• Built-in thermistor for over-temperature monitoring

• Isolation rating of 2000Vrms/min.

Applications

• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives

• Home appliances applications like air conditioner and refrig­erator

General Description

It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar­geting low-power inverter-driven application like air conditioner
and refrigerator. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out protection,
short-circuit protection, and temperature monitoring. The high
speed built-in HVIC provides opto-coupler-less single-supply
IGBT gate driving capability that further reduce the overall size
of the inverter system design. Each phase current of inverter
can be monitored separately due to the divided negative dc ter­minals.

Additional Information

For further infomation, please see AN-9070 and FEB305-001 in
http://www.fairchildsemi.com

Figure 1.

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FNA41060 Rev. C

Integrated Power Functions

• 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to UV (Low-side supply) and SC faults

• Input interface: 3.3/5V CMOS compatible, Schmitt trigger input

Pin Configuration

Top View

VTH(1)

VTH(1)

RTH(2)

RTH(2)

P(3)

P(3)

U(4)

U(4)

Case Temperature (TC)

Case Temperature (TC)

Detecting Point

Detecting Point

V(5)

V(5)

W(6)

W(6)

NU(7)

NU(7)

NV(8)

NV(8)

NW(9)

NW(9)

V

(26)

V

(26)

B(U)

B(U)

V

(25)

V

(25)

S(U)

S(U)

V

(24)

V

(24)

B(V)

B(V)

V

(23)

V

(23)

S(V)

S(V)

V

(22)

V

(22)

B(W)

B(W)

V

(21)

V

(21)

S(W)

S(W)

IN

(20)

IN

(20)

(UH)

(UH)

IN

(19)

IN

(19)

(VH)

(VH)

IN

(18)

IN

(18)

(WH)

(WH)

V

(17)

V

(17)

CC(H)

CC(H)

V

(16)

V

(16)

CC(L)

CC(L)

COM(15)

COM(15)

IN

(14)

IN

(14)

(UL)

(UL)

IN

(13)

IN

(13)

(VL)

(VL)

IN

(12)

IN

(12)

(WL)

(WL)

VFO(11)

VFO(11)

CSC(10)

CSC(10)

FNA41060 Smart Power Module

FNA41060 Rev. C

Figure 2.

2 www.fairchildsemi.com

Pin Descriptions

Pin Number Pin Name Pin Description

1 V

2 R

TH

TH

3 P Positive DC–Link Input

4 U Output for U Phase

5 V Output for V Phase

6 W Output for W Phase

7 N

8 N

9 N

10 C

11 V

12 IN

13 IN

14 IN

U

V

W

SC

FO

(WL)

(VL)

(UL)

15 COM Common Supply Ground

16 V

17 V

18 IN

19 IN

20 IN

21 V

22 V

23 V

24 V

25 V

26 V

CC(L)

CC(H)

(WH)

(VH)

(UH)

S(W)

B(W)

S(V)

B(V)

S(U)

B(U)

Thermistor Bias Voltage

Series Resistor for the Use of Thermistor (Temperature Detection)

Negative DC–Link Input for U Phase

Negative DC–Link Input for V Phase

Negative DC–Link Input for W Phase

Capacitor (Low-pass Filter) for Short-Current Detection Input

Fault Output

Signal Input for Low-side W Phase

Signal Input for Low-side V Phase

Signal Input for Low-side U Phase

Low-Side Common Bias Voltage for IC and IGBTs Driving

High-Side Common Bias Voltage for IC and IGBTs Driving

Signal Input for High-side W Phase

Signal Input for High-side V Phase

Signal Input for High-side U Phase

High-side Bias Voltage Ground for W Phase IGBT Driving

High-side Bias Voltage for W Phase IGBT Driving

High-side Bias Voltage Ground for V Phase IGBT Driving

High-side Bias Voltage for V Phase IGBT Driving

High-side Bias Voltage Ground for U Phase IGBT Driving

High-side Bias Voltage for U Phase IGBT Driving

FNA41060 Smart Power Module

FNA41060 Rev. C

3 www.fairchildsemi.com

Internal Equivalent Circuit and Input/Output Pins

(26) V

(25) V

(24) V

(23) V

(22) V

(21) V

(20) IN

(19) IN

(18) IN

(17) V

(16) V

(15) COM

(14) IN

(13) IN

(12) IN

(11) V

(10) C

B(U)

S(U)

B(V)

S(V)

B(W)

S(W)

(UH)

(VH)

(WH)

CC(H)

CC(L)

(UL)

(VL)

(WL)

FO

SC

UVB

UVS

VVB

VVS

WVB

WVS

IN(UH)

IN(VH)

IN(WH)

VCC

COM

VCC

COM

IN(UL)

IN(VL)

IN(WL)

VFO

C(SC)

OUT(UH)

UVS

OUT(VH)

VVS

OUT(WH)

WVS

OUT(UL)

OUT(VL)

OUT(WL)

Thermister

V

TH

RTH(2)

P (3)

U(4)

V (5)

W(6)

NU(7)

NV(8)

NW(9)

FNA41060 Smart Power Module

(1)

Note:

1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT.

2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions.

3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.

Figure 3.

FNA41060 Rev. C

4 www.fairchildsemi.com

FNA41060 Smart Power Module

Absolute Maximum Ratings (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Symbol Parameter Conditions Rating Units

V

PN

V

PN(Surge)

V

CES

± I

± I

P

T

Note:

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.

CP

C

Supply Voltage Applied between P- NU, NV, N

Supply Voltage (Surge) Applied between P- NU, NV, N

W

W

Collector-emitter Voltage 600 V

Each IGBT Collector Current TC = 25°C, TJ ＜ 150°C 10 A

C

Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse

Width

Collector Dissipation TC = 25°C per One Chip 34 W

Operating Junction Temperature (Note 1) -40 ~ 150 °C

J

450 V

500 V

20 A

Control Part

Symbol Parameter Conditions Rating Units

V

CC

V

BS

V

V

FO

I

FO

V

SC

Control Supply Voltage Applied between V

High-side Control Bias
Voltage

Input Signal Voltage Applied between IN

IN

Applied between V
V

- V

B(W)

S(W)

IN

, IN

(VL)

, IN

(UL)

(WL)

CC(H)

B(U)

(UH)

- COM

- V

, V

- COM 20 V

CC(L)

, V

- V

S(U)

, IN

(VH)

B(V)

, IN

,

S(V)

,

-0.3~VCC+0.3 V

(WH)

20 V

Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V

Fault Output Current Sink Current at VFO Pin 1 mA

Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V

Bootstrap Diode Part

Symbol Parameter Conditions Rating Units

V

RRM

I

F

I

FP

T

Maximum Repetitive Reverse Voltage 600 V

Forward Current TC = 25°C 0.5 A

Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1 A

Operating Junction Temperature -40 ~ 150 °C

J

Total System

Symbol Parameter Conditions Rating Units

V

PN(PROT)

T

STG

V

ISO

Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)

VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2ms

400 V

Storage Temperature -40 ~ 125 °C

Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection

2000 V

Pins to heat sink plate

Thermal Resistance

Symbol Parameter Conditions Min. Typ. Max. Units

R

th(j-c)Q

R

th(j-c)F

Note:

2. For the measurement point of case temperature(TC), please refer to Figure 2.

Junction to Case Thermal
Resistance

Inverter IGBT part (per 1/6 module) - - 3.6 °C/W

Inverter FWD part (per 1/6 module) - - 4.8 °C/W

rms

FNA41060 Rev. C

5 www.fairchildsemi.com

FNA41060 Smart Power Module

Electrical Characteristics (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Symbol Parameter Conditions Min. Typ. Max. Units

V

CE(SAT)

V

F

HS t

t

C(ON)

t

t

C(OFF)

LS t

t

C(ON)

t

t

C(OFF)

I

CES

Note:

3. tON and t

OFF

For the detailed information, please see Figure 4.

Collector-Emitter Saturation
Voltage

VCC = VBS = 15V
VIN = 5V

IC = 10A, TJ = 25°C - 1.7 2.2 V

FWD Forward Voltage VIN = 0V IF = 10A, TJ = 25°C - 1.8 2.3 V

Switching Times VPN = 300V, VCC = VBS = 15V, IC = 10A

ON

TJ = 25°C
VIN = 0V « 5V, Inductive Load

OFF

(Note 3)

0.40 0.70 1.20 ms

- 0.20 0.45 ms

- 0.75 1.25 ms

- 0.25 0.50 ms

t

rr

ON

OFF

VPN = 300V, VCC = VBS = 15V, IC = 10A
TJ = 25°C
VIN = 0V « 5V, Inductive Load
(Note 3)

- 0.15 - ms

0.40 0.70 1.20 ms

- 0.20 0.45 ms

- 0.75 1.25 ms

- 0.25 0.50 ms

t

rr

Collector-Emitter

VCE = V

Leakage Current

include the propagation delay time of the internal drive IC. t

CES

C(ON)

and t

are the switching time of IGBT itself under the given gate driving condition internally.

C(OFF)

- 0.15 - ms

- - 1 mA

V

IN( ON)

10 0% I

V

CE

V

IN

t

ON

10 % I

(a) turn -on

C

90 % I

C

t

t

C( ON)

C

10 0 % I

rr

10 % V

C

I

C

V

IN

t

OFF

V

CE

IN( OFF )

I

C

10 % V

t

C( OF F)

CE

V

10 % I

CE

C

(b) turn-off

Figure 4. Switching Time Definition

FNA41060 Rev. C

6 www.fairchildsemi.com

Switching Loss (Typical)

FNA41060 Smart Power Module

Inductive Load, VPN=300V, VCC=15V, TJ=25℃

700

600

[uJ]

500

SW

400

300

200

SWITCHING LOSS, E

100

0

0 1 2 3 4 5 6 7 8 9 10 11

IGBT Turn-ON, E
IGBT Turn-OFF, E
FRD Turn-OFF, E

COLLECTOR CURRENT, Ic [AMPERES]

on

off

rec

Inductive Load, VPN=300V, VCC=15V, TJ=150℃

700

600

[uJ]

500

SW

400

300

200

SWITCHING LOSS, E

100

0

0 1 2 3 4 5 6 7 8 9 10 11

IGBT Turn-ON, E
IGBT Turn-OFF, E
FRD Turn-OFF, E

COLLECTOR CURRENT, Ic [AMPERES]

on

off

rec

Figure 5. Switching Loss Characteristics

Control Part

Symbol Parameter Conditions Min. Typ. Max. Units

I

QCCH

I

QCCL

I

PCCH

I

PCCL

I

I

V

V

V

SC(ref)

UV

UV

UV

UV

t

V

IN(ON)

V

IN(OFF)

R

Note:

4. Short-circuit current protection is functioning only at the low-sides.

5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application.

Quiescent VCC Supply
Current

Operating VCC Supply
Current

V

V

V

CC(H)

CC(L)

CC(H)

= 15V, IN

= 15V, IN

= 15V, f

(UH,VH,WH)

(UL,VL, WL)

= 20kHz,

PWM

= 0V V

= 0V V

duty=50%, applied to one PWM

- COM - - 0.10 mA

CC(H)

- COM - - 2.65 mA

CC(L)

V

- COM - - 0.15 mA

CC(H)

signal input for High-side

V

= 15V, f

CC(L)

duty=50%, applied to one PWM

= 20kHz,

PWM

V

- COM - - 3.65 mA

CC(L)

signal input for Low-side

Quiescent VBS Supply

QBS

Current

Operating VBS Supply

PBS

Current

VBS = 15V, IN

(UH, VH, WH)

VCC = VBS = 15V, f
duty=50%, applied to one PWM

= 0V V

= 20kHz,

PWM

- V

, V

-

B(U)

S(U)

B(W)

S(U)

B(W)

- V

, V

- V

B(V)

S(W)

B(V)

S(W)

V

, V

S(V)

V

- V

B(U)

V

, V

S(V)

- - 0.30 mA

-

- - 2.00 mA

signal input for High-side

Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kW to 5V Pull-up 4.5 - - V

FOH

FOL

VSC = 1V, VFO Circuit: 4.7kW to 5V Pull-up - - 0.5 V

Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V

CCD

Supply Circuit

CCR

Under-Voltage
Protection

BSD

BSR

Fault-out Pulse Width 30 - - ms

FOD

ON Threshold Voltage Applied between IN

OFF Threshold Voltage 0.8 - - V

Resistance of

TH

Thermister

Detection Level 10.5 - 13.0 V

Reset Level 11.0 - 13.5 V

Detection Level 10.0 - 12.5 V

Reset Level 10.5 - 13.0 V

, IN

, IN

, IN

, IN

,

(UH)

(VH)

(WH)

(UL)

IN

- COM

(WL)

(VL)

- - 2.6 V

@TTH=25°C, (Note 5) - 47 - kW

@TTH=100°C - 2.9 - kW

FNA41060 Rev. C

7 www.fairchildsemi.com

600

550

500

450

400

R-T Curve

20

16

12

R-T Curve in 50 ~ 125℃ ℃

350

300

250

200

Resistance[kW]

150

8

4

Resistance[kW]

0

50 60 70 80 90 100 110 120

Temperature [ ]℃

100

50

0

-20 -10 0 10 20 30 40 50 60 70 80 90 100 11 0 120

Temperature TTH[ ]℃

Figure. 6. R-T Curve of The Built-in Thermistor

FNA41060 Smart Power Module

Bootstrap Diode Part

Symbol Parameter Conditions Min. Typ. Max. Units

V

F

t

rr

Note:

6. Built in bootstrap diode includes around 15 Ω resistance characteristic.

Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V

Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns

Built in Bootstrap Diode VF-IF Characteristic

1.0

0.9

0.8

0.7

0.6

0.5

[A]

F

I

0.4

0.3

0.2

0.1

0.0
0 1 2 3 4 5 6 7 8 9 10 11 1 2 13 14 15

TC=25℃

VF [V]

FNA41060 Rev. C

Figure 7. Built in Bootstrap Diode Characteristic

8 www.fairchildsemi.com

Recommended Operating Conditions

FNA41060 Smart Power Module

Symbol Parameter Conditions

V

V

V

dVCC/dt,

dVBS/dt

t

f

PWM

V

P

WIN(ON)

P

WIN(OFF)

Note:

7. SPM might not make response if input pulse width is less than the recommanded value.

Supply Voltage Applied between P - NU, NV, N

PN

Control Supply Voltage Applied between V

CC

High-side Bias Voltage Applied between V

BS

, V

CC(H)

B(U)-VS(U)

CC(L)

, V

Control supply variation -1 - 1 V/ms

dead

Blanking Time for

For Each Input Signal 1.5 - - ms

Preventing Arm-short

PWM Input Signal -40°C ＜ TJ ＜ 150°C - - 20 kHz

Voltage for Current

SEN

Sensing

Minimun Input Pulse

Applied between NU, NV, N
(Including surge voltage)

W

- COM

(Note 7) 0.5 - - ms

Width

10

9

8

7

6

]

rms

5

[A

4

Orms

I

3

2

1

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140

Allowable Maximum Output Current

VDC=300V, VCC=VBS=15V

TJ ＜ 150℃ , TC ≤ 125℃

M.I.=0.9, P.F.=0.8
Sinusoidal PWM

Case Temperature, TC [℃]

Value

Min. Typ. Max.

W

-COM 13.5 15 16.5 V

B(V)-VS(V),VB(W)-VS(W)

fSW=5kHz

fSW=15kHz

- 300 400 V

13.0 15 18.5 V

-4 4 V

0.5 - -

Units

Note:

8. The allowable output current value may be different from the actual application.

Figure 8. Allowable Maximum Output Current

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FNA41060 FNA41060 SPM26-AA - - 12

FNA41060 Rev. C

9 www.fairchildsemi.com

Mechanical Characteristics and Ratings

FNA41060 Smart Power Module

Parameter Conditions

Device Flatness Note Figure 9 0 - +120 mm

Mounting Torque Mounting Screw: - M3

Note Figure 10

Weight - 11 - g

Figure 9. Flatness Measurement Position

Recommended 0.7N•m 0.6 0.7 0.8 N•m

Recommended 7.1kg•cm 6.2 7.1 8.1 kg•cm

Min. Typ. Max.

Limits

Units

Pre - Screwing : 1→2

Pre - Screwing : 1→2

2

Final Screwing : 2→1

Final Screwing : 2→1

1

1

Note:

9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.

10. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged.

The Pre-Screwing torque is set to 20~30% of maximum torque rating.

Figure 10. Mounting Screws Torque Order

2

FNA41060 Rev. C

10 www.fairchildsemi.com

Time Charts of SPMs Protective Function

Input Signal

FNA41060 Smart Power Module

Protection

Circuit State

Control

UV

RESET

CCR

a1

Supply Voltage

Output Current

Fault Output Signal

a1 : Control supply voltage rises: After the voltage rises UV

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under voltage detection (UV

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UV

a7 : Normal operation: IGBT ON and carrying current.

CCR

CCD

).

).

Figure 11. Under-Voltage Protection (Low-side)

SET RESET

UV

CCD

a2

, the circuits start to operate when next input is applied.

CCR

a3

a4

a5

a6

a7

Input Signal

Protection

Circuit State

Control

Supply Voltage

UV

BSR

RESET

b1

b2

SET RESET

UV

BSD

b3

b4

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: After the voltage reaches UV

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under voltage detection (UV

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UV

b6 : Normal operation: IGBT ON and carrying current

BSR

BSD

)

).

, the circuits start to operate when next input is applied.

BSR

Figure 12. Under-Voltage Protection (High-side)

b5

b6

FNA41060 Rev. C

11 www.fairchildsemi.com

FNA41060 Smart Power Module

Lower arms

control input

c6

c7

Protection

Circuit state

Internal IGBT

Gate-Emitter Voltage

Output Current

Sensing Voltage

SET

c3

c2

SC

c1

RESET

c4

c8

SC Reference Voltage

of the shunt

resistance

CR circuit time
constant delay

Fault Output Signal

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard IGBT gate interrupt.

c4 : IGBT turns OFF.

c5 : Input “L” : IGBT OFF state.

c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.

c7 : IGBT OFF state

c5

Figure 13. Short-Circuit Current Protection (Low-side Operation only)

Input/Output Interface Circuit

5V-Line (MCU or Control p ower)

RPF=10kΩ

IN

IN

MCU

Note:

1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the sig­nal voltage drop at input terminal.

2) The logic input is compatible with standard CMOS outputs.

V

FO

CO M

Figure 14. Recommended CPU I/O Interface Circuit

FNA41060 Rev. C

12 www.fairchildsemi.com

SPM

, ,

(UH)IN(VH)

, ,

(UL)IN(VL )

IN

IN

(WH )

(WL)

FNA41060 Smart Power Module

M

C
U

Gating UH

Gating VH

Gating WH

Fault

Gating UL

Gating VL

Gating WL

(26) V

B(U)

CBSC

BSC

(25) V

C

C

SPC15

S(U)

(20) IN

(UH)

(24) V

B(V)

BSC

(23) V

S(V)

(19) IN

(VH)

(22) V

B(W)

BSC

(21) V

S(W)

(18) IN

(WH)

(17) V

CC(H)

(15) COM

(16) V

CC(L)

(11) V

FO

(14) IN

(UL)

(13) IN

(VL)

(12) IN

(WL)

(10) C

SC

(1) V

TH

THERMISTOR

(2) R

TH

R

S

C

R

S

R

S

BS

C

BS

15V line

CPSC

PSCPS

C

SP15

C

5V line

R

PF

C

SPC05

C

CPSC

SP05

C

C

PS

PS

SC

R

F

R

TH

R

S

C

PF

C

BPF

R

S

R

S

R

S

VB(U)

VS(U)

IN(UH)

VB(V)

VS(V)

IN(VH)

VB(W)

VS(W)

IN(WH)

VCC

COM

VCC

VFO

IN(UL)

IN(VL)

IN(WL)

COM

CSC

HVIC

LVIC

OUT(UH)

VS(U)

OUT(VH)

VS(V)

OUT(WH)

VS(W)

OUT(UL)

OUT(VL)

OUT(WL)

P (3)

U (4)

V (5)

W (6)

NU(7)

NV(8)

NW(9)

M

V

C

DC

DCS

R

SU

R

SV

R

SW

Input Signal for

Short-Circuit Protection

Temp. Monitoring

U-Phase Current

V-Phase Current

W-Phase Current

Note:

1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. Please refer

to Figure14.

4) C

of around 7 times larger than bootstrap capacitor CBS is recommended.

SP15

5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention

of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. (Recommended RS=100 Ω , CPS=1nF)

6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.

7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2ms.

8) Each capacitor should be mounted as close to the pins of the SPM as possible.

9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive

capacitor of around 0.1~0.22mF between the P&GND pins is recommended.

10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W)

12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and

frequency characteristics in C

BSC

.

13) For the detailed information, please refer to the AN-9070 and FEB305-001.

Figure 15. Typical Application Circuit

FNA41060 Rev. C

13 www.fairchildsemi.com

Detailed Package Outline Drawings

±0.10

17-0.50

FNA41060 Smart Power Module

(2.609)

2-R1.60

PKG.C

PKG.C

(2-0.70)

±0.50

11.10

16.891

19x1.778

±0.30

39.00

±0.300

16.891

=33.782

±0.50

±0.30

±0.50

6.00

±0.05

2.05

±0.50

23.00

13.00013.000

PKG.C

2

°

~6

±0.50

27.23

°

±0.15

10.00

PKG.C

36.70

±0.15

(R0.50)

4.50

11.10

±0.30

±0.50

0

5

1

.

0

.

0

0

+

­0
5

.
0

FNA41060 Rev. C

(1.50)

9-0.60

±0.10

13x2.54

15.240

±0.30

±0.300

PKG.C

=33.020

17.780

±0.30

(1.720)

(2-0.50)

±0.50

6.00

±0.50

11.10

14 www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *

™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter® *
FPS™

®

®

®

®

®

F-PFS™

®

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR

®

®

®

PDP SPM™
Power-SPM™
PowerTrench
PowerXS™

®

SM

Programmable Active Droop™

®

QFET
QS™
Quiet Series™
RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™

®

The Power Franchise

®

TinyBoost™
TinyBuck™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
mSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly o r from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I38