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FMW3 / FMW4 / IMX8
Transistors
General purpose (dual transistors)
FMW3 / FMW4 / IMX8
External dimensions
Features
!!!!
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
Absolute maximum ratings
!!!!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
∗
Package, marking, and packaging specifications
!!!!
Part No.
Package
Marking
Code
Basic
ordering unit
Circuit diagrams
!!!!
FMW3 FMW4 IMX8
(pieces)
V
V
V
Tstg
CBO
CEO
EBO
I
C
Pc
Tj
FMW3
SMT5
T148
3000
W3
(Ta = 25°C)
Limits
120
120
5
50
300(TOTAL)
150
−55
~
+150
FMW4
SMT5
W4
T148
3000
Unit
mW
SMT6
V
V
V
mA
°C
°C
IMX8
T108
3000
!!!!
FMW3
FMW4
∗
X4
ROHM : SMT5
EIAJ : SC-74A
IMX8
ROHM : SMT6
EIAJ : SC-74
(Units : mm)
0.3
0.15
0.3to0.6
0.3
0.15
0.3to0.6
)
2
(
)
1
(
1.6
2.8
0to0.1
)
6
(
)
5
(
)
4
(
1.6
2.8
0to0.1
)
3
(
0.95
2.9
1.9
)(
4
(
0.95
)
5
1.1
0.8
Each lead has same dimensions
)
1
(
0.95
)
1.9
2.9
2
(
0.95
)
3
(
1.1
0.8
Each lead has same dimensions
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
Transition frequency
Collector-emitter saturation voltage
Transition frequency of the device
∗
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
(Ta=25°C)
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
120
−
120
−
5
−
−
−
−
−
180
− 140 − MHz
−−0.5 V IC/IB=
V
−
V
−
µA
0.5
µA
0.5
−
820
V
−
−
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
100V
V
EB
=
4V
V
CE
=
6V, IC=
2mA
VCE=−12V, IE=2mA, f=100MHz
10mA/1mA
∗
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