Page 1
Advance Technical Information
TrenchTM P & N-Channel
FMP76-01T
Power MOSFET
Common Drain Topology
Symbol Test Conditions Maximum Ratings
T
T
T
V
T
T
F
J
JM
stg
ISOLD
L
SOLD
C
50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V
1.6mm (0.062 in.) from case for 10s 300 °C
Plastic body for 10s 260 °C
Mounting force 20..120 / 4.5..27 N/lb.
-55 ... +150 °C
-55 ... +150 °C
3
4
5
5
4
3
1
1
2
2
150 °C
T1
T2
P CH. N CH.
V
- 100V 100V
DSS
I
- 54A 62A
D25
R
t
24m
DS(on)
rr(typ)
70ns
ISOPLUS i4-Pak
Ω Ω
Ω 11m
Ω Ω
67ns
TM
ΩΩ
Ω
ΩΩ
1
Isolated Tab
5
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
C
P
Coupling capacitance between shorted 40 pF
pins and mounting tab in the case
dS ,d
dS ,d
A
A
pin - pin 1.7 mm
pin - backside metal 5.5 mm
Weight 9 g
P - CHANNEL
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
TJ= 25°C to 150°C - 100 V
TJ= 25°C to 150°C, RGS = 1MΩ - 100 V
Continuous ± 20 V
Transient ± 30 V
TC= 25°C - 54 A
TC= 25°C, pulse width limited by T
JM
- 230 A
TC= 25°C - 38 A
TC= 25°C 1.0 J
TC= 25°C 132 W
Features
z
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z
Avalanche rated
z
Low Q
z
z
G
Low Drain-to-Tab capacitance
Low package inductance
Advantages
z
Low gate drive requirement
z
High power density
z
Low drain to ground capacitance
z
Fast switching
Applications
z
DC and AC motor drives
z
Class AB audio amplifiers
z
Multi-phase DC to DC converters
z
Industrial battery chargers
z
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100037(09/08)
Page 2
FMP76-01T
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = - 250 μA - 100 V
VDS= VGS, ID = - 250μA - 2.0 - 4.0 V
VGS= ±20 V, VDS = 0V ± 100 nA
VDS= V
, VGS = 0V -15 μA
DSS
TJ = 125°C - 750 μA
R
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
DS(on)
fs
iss
oss
rss
g(on)
gs
gd
VGS= -10V, ID = - 38A, Note 1 24 mΩ
V
= -10V, ID = - 38A, Note 1 35 58 S
DS
13.7 nF
VGS = 0V, VDS = - 25V, f = 1MHz 890 pF
275 pF
Resistive Switching Times 25 ns
VGS = -10V, VDS = 0.5 z V
, ID = - 38A 40 ns
DSS
RG = 1Ω (External) 52 ns
20 ns
197 nC
VGS= -10V, VDS = 0.5 z V
, ID = - 38A 65 nC
DSS
65 nC
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
R
thJC
R
thCS
0.95 °C/W
0.15 °C/W
Drain-Source Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions2 Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0V - 54 A
Repetitive, pulse width limited by T
JM
- 304 A
IF = - 38A, VGS = 0V, Note 1 - 1.3 V
IF = - 38A, di/dt = 100A/μs 70 ns
VR = - 50V, VGS = 0V 215 nC
- 6 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
N - CHANNEL
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
TJ= 25°C to 150°C 100 V
TJ= 25°C to 150°C, RGS = 1MΩ 100 V
Transient ± 20 V
TC= 25°C 62 A
TC= 25°C, pulse width limited by T
JM
300 A
TC= 25°C 65 A
TC= 25°C 500 mJ
TC= 25°C 89 W
FMP76-01T
BV
V
I
GSS
I
DSS
R
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
DSS
GS(th)
DS(on)
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
VGS= 0V, ID = 250 μA 100 V
VDS= VGS, ID = 250μA 2.5 4.5 V
VGS= ±20 V, VDS = 0V ± 200 nA
VDS= V
DSS
5 μA
VGS = 0V TJ = 150°C 250 μA
VGS= 10V, ID = 25A, (Note 1) 11 mΩ
V
= 10V, ID = 60A, (Note 1) 55 93 S
DS
5080 pF
VGS = 0V, VDS = 25 V, f = 1 MHz 635 pF
95 pF
Resistive Switching Times 30 ns
VGS = 10V, VDS = 0.5 z V
, ID = 25A 47 ns
DSS
RG = 5Ω (External) 44 ns
28 ns
104 nC
VGS= 10V, VDS = 0.5 z V
, ID = 25A 30 nC
DSS
29 nC
1.4 °C/W
0.15 °C/W
© 2008 IXYS CORPORATION, All rights reserved
Page 4
Source-Drain Diode Characteristic Values
T
Symbol Test Conditions
3
= 25°C unless otherwise specified)
J
Min. Typ. Max.
FMP76-01T
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0V 62 A
Repetitive, pulse width limited by T
JM
350 A
IF = 25A, VGS = 0V, Note 1 1.0 V
67 ns
= 25A, -di/dt = 100A/μs
I
F
160 nC
V
= 50V, VGS = 0V
R
4.7 A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Loading...