Page 1
Advance Technical Information
PolarTM P & N-Channel
FMP36-015P
Power MOSFETs
Common Drain Topology
3
4
5
5
4
3
1
1
2
2
Symbol Test Conditions Maximum Ratings
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
1.6mm (0.062 in.) from case for 10s 300 °C
50/60HZ, RMS, t=1s, leads-to-tab 2500 V~
Mounting force 20..120 / 4.5..27 N/lb.
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
- 55 ... +150 °C
150 °C
- 55 ... +150 °C
T1
T2
P CH. N CH.
V
- 150V 150V
DSS
I
- 22A 36A
D25
R
t
110m
DS(on)
rr(typ)
228ns
ISOPLUS i4-Pak
Ω Ω
Ω 40m
Ω Ω
150ns
TM
ΩΩ
Ω
ΩΩ
1
Isolated Tab
5
C
P
Coupling capacitance between shorted 40 pF
pins and mounting tab in the case
dS ,d
dS ,d
A
A
pin - pin 1.7 mm
pin - backside metal 5.5 mm
Weight 9 g
P - CHANNEL
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
TJ= 25°C to 150°C -150 V
TJ= 25°C to 150°C, RGS = 1MΩ -150 V
Continuous ± 20 V
Transient ± 30 V
TC= 25°C - 22 A
TC= 25°C, pulse width limited by T
JM
- 90 A
TC= 25°C - 36 A
TC= 25°C 1.5 J
TC= 25°C 125 W
Features
z
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z
Avalanche rated
z
Low Q
z
z
G
Low Drain-to-Tab capacitance
Low package inductance
Advantages
z
Low gate drive requirement
z
High power density
z
Low drain to ground capacitance
z
Fast switching
Applications
z
DC and AC motor drives
z
Class AB audio amplifiers
z
Multi-phase DC to DC converters
z
Industrial battery chargers
z
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100034(08/08)
Page 2
FMP36-015P
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = - 250 μA -150 V
VDS= VGS, ID = - 250μA - 2.5 - 4.5 V
VGS= ±20V, VDS = 0V ± 100 nA
VDS= V
, VGS = 0V -10 μA
DSS
TJ = 125°C - 250 μA
R
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
DS(on)
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
VGS= -10V, ID = -18A, Note 1 110 mΩ
V
= -10V, ID = -18A, Note 1 11 19 S
DS
3100 pF
VGS = 0V, VDS = - 25 V, f = 1MHz 610 pF
100 pF
Resistive Switching Times 21 ns
VGS = -10V, VDS = 0.5 z V
, ID = -18A 31 ns
DSS
RG = 3.3Ω (External) 36 ns
15 ns
55 nC
VGS= -10V, VDS = 0.5 z V
, ID = -18A 20 nC
DSS
18 nC
1.0 °C/W
0.15 °C/W
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
Drain-Source Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions2 Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
VGS = 0V - 22 A
Repetitive, pulse width limited by T
JM
-140 A
IF = -18A, VGS = 0 V, Note 1 - 3.3 V
IF = -18A, di/dt = 100 A/μs 228 ns
VR = - 75V, VGS = 0V 2.0 μC
-17.6 A
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
N - CHANNEL
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
TJ= 25°C to 150°C 150 V
TJ= 25°C to 150°C; RGS = 1MΩ 150 V
Continuous ± 20 V
Transient ± 30 V
TC= 25°C 36 A
TC= 25°C, pulse width limited by T
JM
150 A
TC= 25°C 50 A
TC= 25°C 1.0 J
TC= 25°C 125 W
FMP36-015P
Symbol Test Conditions
2
Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 250 μA 150 V
VDS= VGS, ID = 250μA 3.0 5.5 V
VGS= ±20 V, VDS = 0V ± 100 nA
VDS= V
, VGS = 0V 25 μA
DSS
TJ = 150°C 250 μA
R
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
DS(on)
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
VGS= 10V, ID = 31A, (Note 1) 33 40 mΩ
V
= 10V, ID = 31A, (Note 1) 14 24 S
DS
2250 pF
VGS = 0V, VDS = 25 V, f = 1 MHz 660 pF
185 pF
Resistive Switching Times 27 ns
VGS = 10V, VDS = 0.5 z V
, ID = 31A 38 ns
DSS
RG = 10Ω (External) 76 ns
35 ns
70 nC
VGS= 10V, VDS = 0.5 z V
, ID = 31A 20 nC
DSS
38 nC
1.0 °C/W
0.15 °C/W
© 2008 IXYS CORPORATION, All rights reserved
Page 4
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions
3
Min. Typ. Max.
FMP36-015P
I
S
I
SM
V
SD
t
rr
Q
RM
VGS = 0V 36 A
Repetitive, pulse width limited by T
JM
150 A
IF = 62A, VGS = 0V, Note 1 1.5 V
IF = 25A, -di/dt = 100A/μs 150 ns
VR = 100V, VGS = 0V 2.0 μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
IXYS reserves the right to change limits, test conditions, and dimensions.
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