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SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
FMMV109
PIN CONFIGURATION
1
1
PARTMARKING DETAIL
FMMV109 – 4A
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Reverse current I
Series Inductance L
Diode Capacitance
Temperature
Coefficient
=25°C P
amb
V
BR
R
S
T
CC
30 V
tot
j:Tstg
= 25°C unless otherwise stated).
amb
10 nA VR = 25V
3.0 nH f=250MHz
280 ppm/ °C VR = 3V, f=1MHz
330 mW
-55 to +150 °C
= 10µA
I
R
2
3
Case Capacitance C
C
TUNING CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance C
Capacitance Ratio C
Figure of MERIT Q 200 250 V
Spice parameter data is available upon request for this device
d
d
/ C
d
0.1 pF f=1MHz
= 25°C).
amb
26 32 pF VR = 3V, f=1MHz
5.0 6.5 VR = 3V/25V, f=1MHz
= 3V, f=50MHz
R
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