Page 1
C
SOT23 NPN SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – NOVEMBER 1997
FEATURES
Very low equivalent on-resistance; R
COMPLEMENTARY TYPE – FMMTL720
=160mΩ at 1.25A
CE(sat)
FMMTL619
E
PARTMARKING DETAIL – L69
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
100 V
50 V
5V
1.25 A
2A
200 mA
500 mW
-55 to +150 °C
B
Page 2
FMMTL619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
100 210 V
I
=100µA
C
50 70 V IC=5mA*
58.5 V
=100µA
I
E
10 nA VCB=40V
10 nA VEB=4V
10 nA VCE=40V
24
60
100
195
45
100
180
330
mV
mV
mV
mV
IC=100mA, IB=10mA*
I
=250mA, IB=10mA*
C
I
=500mA, IB=25mA*
C
I
=1.25A, IB=125mA*
C
1020 1100 mV IC=1.25A, IB=125mA*
895 1000 mV IC=1.25A, VCE=2V*
200
300
200
100
30
400
450
400
230
50
IC=10mA, VCE=5V
I
=200mA, VCE=5V*
C
I
=500mA, VCE=5V*
C
I
=1A, VCE=5V*
C
I
=2A, VCE=5V*
C
180 MHz IC=50mA, VCE=10V
f=100MHz
6 8 pF VCB=10V, f=1MHz
182
379
ns
ns
IC=1A, VCC=10V
I
=-IB2=10mA
B1
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Page 3
TYPICAL CHARACTERISTICS
FMMTL619
0.5
+25°C
0.4
IC/IB=10
0.3
- (V)
0.2
CE(sat)
V
0.1
0
1m 10
IC/IB=20
IC/IB=50
10m 100m 1
IC - Collector Current (A)
VCE(sat) v IC
VCE=5V
700
350
- Typical Gain
FE
h
0
10m 100m 1 10
1m
IC - Collector Current (A)
+100°C
+25°C
-55°C
hFE v IC
VCE(sat) - (V)
VBE(sat) - (V)
0.5
IC/IB=10
0.4
0.3
0.2
0.1
0
1m
-55°C
+25°C
+100°C
10m 100m 1 10
IC- Collector Current (A)
VCE(sat) v IC
IC/IB=10
1.0
0.8
0.6
0.4
0.2
0
10m 1
-55°C
+25°C
+100°C
10100m1m
IC - Collector Current (A)
VBE(sat) v IC
1.2
VCE=5V
0.8
- (V)
BE(on)
0.4
V
0
10m 1
1m 100m 10
IC- Collector Current (A)
VBE(on) v IC
-55°C
+25°C
+100°C
IC - Collector Current (A)
10
1
DC
100m
10m
100m
1s
100ms
10ms
1ms
100us
VCE- Collector Emitter Voltage (V)
110100
Safe Operating Area
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