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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 JANUARY 1996 ✪
FEATURES
FMMTA55
FMMTA56
* Gain of 50 at I
=100mA
C
C
PARTMARKING DETAIL - FMMTA55 - 2H
FMMTA56 - 2G
B
FMMTA55R - NB
FMMTA56R - MB
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA55 FMMTA56 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
C
tot
T
j:Tstg
amb
= 25°C).
FMMTA55 FMMTA56
PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector-Base
Cut-Off Current
Static Forward
Current Transfer Ratio
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Transition
Frequency
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
*Measured under pulsed conditions. Pulse width=300
-60 -80 V IC=-1mA, IB=0*
-4 -4 V
-0.1 -0.1
-0.1
50
50
50
50
-0.25 -0.25 V IC=-100mA,
-1.2 -1.2 V IC=-100mA, VCE=-1V*
100 100 MHz IC=-10mA, VCE=-2V
µs. Duty cycle ≤2%
-60 -80 V
-60 -80 V
-4 V
-500 mA
330 mW
-55 to +150 °C
=-100µA, I
I
E
=-60V
V
-0.1
µA
µA
CE
V
=-80V, IE=0
CB
=-60V, IE=0
V
CB
IC=-10mA, VCE=1V*
=-100mA, VCE=1V*
I
C
I
=-10mA*
B
f=100MHz
=0
C
E
3 - 177
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