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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 – MARCH 2001 ✪
FMMTA42
PARTMARKING DETAIL – FMMTA42 – 3E
FMMTA42R – 7E
C
B
COMPLEMENTARY TYPES – FMMTA42 – FMMTA92
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA42 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
Ratio
Transition
Frequency
Output Capacitance C
f
T
obo
*Measured under pulsed conditions. Pulse width=300
300 200 V
300 200 V IC=1mA, IB=0*
66V
0.1
0.1
0.1
0.1
µA
µA
µA
µA
0.5 0.4 V IC=20mA, IB=2mA*
0.9 0.9 V IC=20mA, IB=2mA*
25
40
40
25
40
50 200
50 50 MHz IC=10mA, VCE=20V
68pFV
µs. Duty cycle ≤2%
300 V
300 V
5V
200 mA
330 mW
-55 to +150 °C
I
=100µA, IE=0
C
=100µA, IC=0
I
E
V
=200V, IE=0
CB
V
=160V, IE=0
CB
V
=6V, IC=0
EB
V
=4V, IC=0
EB
IC=1mA, VCE=10V*
I
=10mA, VCE=10V*
C
I
=30mA, VCE=10V*
C
f=20MHz
=20V, f=1MHz
CB
E
TBA
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