Page 1
SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
* 625mW POWER DISSIPATION
*IC CONT 2.5A
*I
Up To 10A Peak Pulse Current
C
* Excellent h
* Extremely Low Saturation Voltage E.g. 10mV Typ.
* Exhibits extremely low equivalent on-resistance; R
Characteristics Up To 10A (pulsed)
fe
CE(sat)
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
C
E
B
DEVICE TYPE COMPLEMENT PARTMARKING R
FMMT717 FMMT617 717
FMMT718 FMMT618 718
FMMT720 FMMT619 720
72m
97m
163m
CE(sat)
Ω at 2.5A
Ω at 1.5A
Ω at 1.5A
FMMT722 722 -
FMMT723 FMMT624 723 -
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
FMMT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C* P
amb
Operating and Storage
Temperature Range
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
FMMT
717
718
FMMT
720
FMMT
722
FMMT
723 UNIT
-12 -20 -40 -70 -100 V
-12 -20 -40 -70 -100 V
-5 -5 -5 -5 -5 V
-10 -6 -4 -3 -2.5 A
-2.5 -1.5 -1.5 -1.5 -1 A
-500 mA
625 mW
-55 to +150 °C
µs. Duty cycle ≤ 2%
3 - 159
Page 2
FMMT722
FMMT723
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
FMMT722 FMMT723
MIN. TYP. MAX. MIN. TYP. MAX.
-70 -150 -100 -200 V
-70 -125 -100 -160 V IC=-10mA*
-5 -8.8
-35
-135
-140
-175
-0.94 -1.05
-0.78 -1.0
470
300
450
300
275
175
= 25°C unless otherwise stated).
amb
-5 -8.8 V
-100
-100nAnA
-100 -100 nA VEB=-4V
-100
-100nAnA
-50
-50
-80
-200
-125
-200
-220
-210
-330
-260
-0.89 -1.0 V I
-0.71 -1.0 V I
300
475
300
450
250
375
250
60
40
30
10
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
obo
(on)
(off)
150 200 150 200 MHz IC=-50mA, VCE=-10V
20 13 20 pF VCB=-10V, f=1MHz
14
40
50 ns VCC=-50V, IC=-0.5A
700 760 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
UNIT CONDITIONS.
I
=-100µA
C
=-100µA
I
E
VCB=-60V
V
=-80V
CB
V
=-60V
CES
V
=-80V
CES
mV
IC=-0.1A, IB=-10mA*
mV
I
=-0.5A, IB=-20mA*
C
=-0.5A, IB=-50mA*
mV
I
C
I
mV
=-1A, IB=-100mA*
C
mV
I
=-1A, IB=-150mA*
C
mV
I
=-1.5A, IB=-200mA*
C
=-1A, IB=-150mA*
C
=-1.5A, IB=-200mA*
I
C
=-1A, VCE=-10V*
C
I
=-1.5A, VCE=-5V*
C
I
=-10mA, VCE=-5V*
C
I
=-10mA, VCE=-10V*
C
=-0.1A, VCE=-5V*
I
C
I
=-0.1A, VCE=-10V*
C
I
=-0.5A, VCE=-10V*
C
I
=-1A, VCE=-5V*
C
=-1A, VCE=-10V*
I
C
=-1.5A, VCE=-5V*
I
C
I
=-1.5A, VCE=-10V*
C
I
=-3A, VCE=-5V*
C
f=100MHz
I
=-50mA
B1=IB2
Page 3
FMMT722
TYPICAL CHARACTERISTICS
0.6 0.6
25°C
0.5
0.4
I
C/IB
0.3
0.2
0.1
0.0
1mA
=50
C/IB
=20
I
IC/IB=10
IC/IB=5
10mA 1A100mA
Collector Current
VBE(SAT) vs IC
10A
IC/IB=10
0.5
0.4
0.3
0.2
0.1
0.0
1mA
10mA 100mA 1A
100°C
25°C
-55°C
10A
Collector Current
VCE(SAT) vs IC
1.6
100°C
1.4
1.2
1.0
25°C
0.8
0.6
-55°C
0.4
0.2
0.0
1mA
10mA 1A100mA
Collector Current
VCE=5V
450
225
10A
hFE vs IC
1.0
VCE=5V
0.8
0.6
0.4
0.2
0.0
1mA
-55°C
25°C
100°C
10mA 100mA 1A
10A
Collector Current
VBE(ON) vs IC
1.2
IC/IB=5
1.0
0.8
0.6
0.4
0.2
0.0
10mA 100mA 1A
Collector Current
SINGLE PULSE TEST T
10
1.0
D.C.
1s
100ms
10ms
1ms
100µs
0.1
0.01
0.1
Safe Operating Area
-55°C
25°C
100°C
VBE(SAT) vs IC
amb
= 25 deg C
1 10 100
VCE(VOLTS)
10A1mA
3 - 166 3 - 163
Page 4
FMMT617 FMMT624
FMMT618 FMMT625
SuperSOT Series
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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