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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - NOVEMBER 1995 ✪
FEATURES
* 350 Volt V
* Gain of 15 at IC=-100mA
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
COMPLEMENTARY TYPE FMMT6517
PARTMARKING DETAIL 520
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Cut-Off Currents I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Output Capacitance C
Transition Frequency f
*Measured under pulsed conditions. Pulse width=300
CEO
= 25°C P
amb
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-350 V
-350 V IC=-1mA, IB=0*
-5 V
20
30
30
20
15
obo
T
50 MHz IC=-10mA, VCE=-20V,
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
-50 nA VCB=-250V, IE=0
-50 nA VEB=-3V, IC=0
-0.3
-0.35
-0.5
-1.0
-0.75
-0.85
-0.90
V
V
V
V
V
V
V
-2.0 V IC=-100mA, VCE=-10V*
200
200
6pFV
µs. Duty cycle ≤2%
FMMT6520
C
SOT23
-350 V
-350 V
-5 V
-500 mA
330 mW
-55 to +150 °C
=-100µA, I
I
C
=-10µA, I
I
E
I
=-10mA, IB=-1mA*
C
=-20mA, IB=-2mA*
I
C
I
=-30mA, IB=-3mA*
C
=-50mA, IB=-5mA*
I
C
I
=-10mA, IB=-1mA*
C
=-20mA, IB=-2mA*
I
C
I
=-30mA, IB=-3mA*
C
I
=-1mA, VCE=-10V
C
=-10mA, VCE=-10V*
I
C
=-30mA, VCE=-10V*
I
C
I
=-50mA, VCE=-10V*
C
=-100mA, VCE=-10V*
I
C
=20V, f=1MHz
CB
f=20MHz
=0
E
=0
C
E
B
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