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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
Low equivalent on resistance R
PART MARKING DETAIL - 91A
COMPLEMENTARY TYPE - FMMT491A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
= 350mΩ at 1A
CE(sat)
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
FMMT591A
C
-40 V
-40 V
-5 V
-2 A
-1 A
-200 mA
500 mW
-55 to +150 °C
E
B
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer Ratio h
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
CES
V
CE(sat)
BE(sat)
BE(on)
FE
-40 V
-40 V IC=-10mA*
-5 V
300
300
250
160
30
Transition Frequency f
Output Capacitance C
T
obo
*Measured under pulsed conditions. Pulse width=300
150 MHz IC=-50mA, VCE=-10V
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
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=-100µA
I
C
=-100µA
I
E
-100 nA VCB=-30V
-100 nA VEB=-4V
-100 nA V
V
-0.2
V
-0.35
V
-0.5
=-30V
CES
I
=-100mA,IB=-1mA*
C
=-500mA,IB=-20mA*
I
C
I
=-1A, IB=-100mA*
C
-1.1 V IC=-1A, IB=-50mA*
-1.0 V IC=-1A, VCE=-5V*
I
=-1mA,
800
C
I
=-100mA*,
C
I
=-500mA*, VCE=-5V
C
=-1A*,
I
C
I
=-2A*,
C
f=100MHz
10 pF VCB=-10V, f=1MHz
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FMMT591A
TYPICAL CHARACTERISTICS
400
300
200
0.4
0.3
0.2
0.1
0
100
0.8
0.6
0.4
0.2
0
0.6
+25 ° C
0.5
IC/IB=10
IC/IB=50
1mA
100mA10mA
10A1A
IC-Collector Current
VCE(sat) v IC
CE
=5V
V
+100 °C
+25 °C
-55 °C
0
1mA
100mA10mA
-Collector Current
I
C
1A
10A
hFE V IC
1.2
CE
V
=5V
1.0
-55 °C
+25 °C
+100 °C
1mA
100mA10mA
1A
10A
IC-Collector Current
VBE(on) v IC
0.6
C/IB
=10
I
0.5
0.4
0.3
-55 °C
+25 °C
+100 °C
0.2
0.1
0
1mA
IC-Collector Current
VCE(sat) v I
C/IB
=10
I
1.0
0.8
0.6
0.4
0.2
0
1mA
10mA
C
-55 °C
+25 °C
+100 °C
100mA 1A 10A
IC-Collector Current
VBE(sat) v I
10
1
DC
1s
100ms
0.1
10ms
1ms
100us
0.01
0.1V 10V 100V
1V
C
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10A1A10mA 100mA
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