Page 1
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 1998
FEATURES
* Excellent h
* Low Saturation voltages
PARTMARKING DETAIL – 560
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn On Voltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Output Capacitance C
Switching times t
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
characterisristics up to IC=50mA
FE
amb
V
(BR)CBO
V
BR(CEO)
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
obo
on
t
off
-500 V
-500 V IC=-10mA*
-5 V
; I
CES
100
80
15 typ
60 MHz VCE=-20V, IC=-10mA,
110 typ.
1.5 typ.
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C).
-100 nA VCB=-500V; VCE=-500V
-100 nA VEB=-5V
-0.2
-0.5VV
-0.9 V IC=-50mA, IB=-10mA *
-0.9 V IC=-50mA, VCE=-10V *
300
300
8pFV
ns
µs
FMMT560
C
-500 V
-500 V
-5 V
-500 mA
-150 mA
500 mW
-55 to +150 °C
I
=-100µA
C
=-100µA
I
E
IC=-20mA, IB=-2mA *
I
=-50mA, IB=-10mA *
C
IC=-1mA, V
I
=-50mA, V
C
I
=-100mA, VCE =-10V*
C
f=50MHz
=-20V, f=1MHz
CB
VCE=-100V, IC=-50mA,
I
=-5mA, IB2=10mA
B1
CE
CE
=-10V
=-10V *
E
B
Page 2
FMMT560
TYPICAL CHARACTERISTICS
240
160
+25°C
1.6
1.2
IC/IB=10
0.8
0.4
0
1m
IC/IB=20
IC/IB=50
10m 100m
IC- Collector Current (A)
V
VCE=5V
+100°C
+25°C
80
-55°C
0
1m
1.0
10m 100m 1
IC- Collector Current (A)
CE(sat)
h
FE
v I
v I
C
C
0.8
IC/IB=10
0.6
-55°C
1m
+25°C
+100°C
+150°C
10m 100m
0.4
0.2
0
IC- Collector Current (A)
V
1.0
IC/IB=10
0.8
0.6
0.4
0.2
0
1m
v I
CE(sat)
C
-55°C
+25°C
+100°C
+150°C
10m 100m
IC- Collector Current (A)
V
1
BE(sat)
v I
C
0.75
0.5
-55°C
v I
+25°C
+100°C
+150°C
C
0.25
0
1m
IC- Collector Current (A)
10m 100m
V
BE(on)
0.1
DC
0.01
0.001
1
1s
100ms
10ms
1ms
100µs
10 100 1000
VCE- Collector Emitter Voltage (V)
Safe Operating Area
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