Page 1
FMMT549
FMMT549
C
E
B
SuperSOTTM-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings* T
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
A = 25°C unless otherwise noted
ParameterSymbol
Collector Current - Continuous
- Peak Pulse Current
A = 25°C unless otherwise noted
Characteristic
Total Device Dissipation*
Derate above 25°C
FMMT549
2
Max
FMMT549
500
4
Units
V30Collector-Emitter Voltage
V35Collector-Base Voltage
V5Emitter-Base Voltage
A1
°C-55 to +150Operating and Storage Junction Temperature Range
Units
mW
mW/°C
°C/W250Thermal Resistance, Junction to Ambient
Page 1 of 2 1998 Fairchild Semiconducto Corporation
fmmt549.lwpPrPB 7/10/98 revB
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ON
CHARACTERISTICS
*
PNP Low Saturation Transistor
FMMT549
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, Ta=100°C
VEB = 4V
IC = 50 mA, VCE = 2V
IC = 500 mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA
70
100
80
40
100
10
100
300
500
750
UnitsMaxMinTest ConditionsParameterSymbol
V30
V35
V5
nA
uA
nA
-
mV
mV
V
V
SMALL SIGNAL CHARACTERISTICS
C
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
BE(sat)
BE(on)
obo
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
VCB = 10 V, IE = 0, f = 1MHz
IC = 100 mA,VCE = 5 V, f=100MHz
V1.25
V1
pF25
MHz 100
Page 2 of 2 1998 Fairchild Semiconducto Corporation
fmmt549.lwpPrPB 7/10/98 revB
Page 3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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