Datasheet FMMT459TC, FMMT459TA Datasheet (Zetex Semiconductor)

FMMT459

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

SUMMARY
V

=450V; VCE(sat) = 100mV; IC= 150mA

CEO

DESCRIPTION

This new high voltage tranistor provides users with very effiecient
performance combining low V
losses at 450V operation, making it ideal for use in high efficiency Telecom
and protected line switching applications.

FEATURES

Low Saturation Voltage - 90mV @ 50mA

•

Hfe Min 50 @ 30 mA

•

=150mA Continuous

I

•

C

• SOT23 package with Ptot 625mW

• Specification can be supplied in larger package outlines

APPLICATIONS

• Electronic test equipment

• Off line switching circuits

• Piezo Actuators.

•

RCD circuits.

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

(sat) and Hfe to give extremely low on state

CE

TAPE WIDTH
(mm)

QUANTITY
PER REEL

SOT23

C

Top View

E

B

FMMT459TA 7 8mm embossed 3000 units

FMMT459TC

DEVICE MARKING

459

ISSUE 2 - DECEMBER 2001

13 8mm embossed 10000 units

1

FMMT459

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CM

C

B

P

P

CBO

CEO

EBO

D

D

j:Tstg

500 V

450 V

5V

500 mA

150 mA

200 mA

625

5

806

6.4

mW

mW/°C

mW

mW/°C

-55 to +150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

2

200 °C/W

155 °C/W

ISSUE 2 - DECEMBER 2001

FMMT459

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base

Breakdown Voltage

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

Collector Cut-Off
Current

Emitter Cut-Off Current I
Collector Emitter

Cut-Off Current
Collector Emitter

Saturation Voltage

Base-Emitter Saturation
Voltage

Base-Emitter Turn-On

V

CE(sat)

V

BE(sat)

V

Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Output Capacitance C
Turn-On Time t

Turn-Off Time t

I

CBO

EBO

I

CES

BE(on)

H

FE

T

OBO

(on)

(off)

500 700 V

I

= 100µA

C

450 500 V IC= 10mA*

58 V

I

= 100µA

E

100 nA VCB= 450V

100 nA VEB=5V
100 nA VCE= 450V

60
70

75
90

mVmVIC= 20mA, IB= 2mA*

= 50mA, IB= 6mA*

I

C

.76 .9 V IC= 50mA, IB= 5mA*

.71 .9 V IC= 50mA, VCE= 10V*

50 120

70

IC= 30mA, VCE= 10V*

= 50mA, VCE= 10V*

I

C

50 MHz IC= 10mA, VCE= 20V

F = 20MH

5

FVCB= 20V, f = 1MH

P

Z

113 ns IC= 50mA, VC= 100V

= 5mA, IB2= 10mA

I

B1

3450 ns IC= 50mA, VC= 100V

= 5mA, IB2= 10mA

I

B1

Z

*Measured under plused conditions. Pulse width = 300µs. Dury cycle <2%

NB. For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.

ISSUE 2 - DECEMBER 2001

3

FMMT459

ELECTRICAL CHARACTERISTICS

1

Tamb=25°C

IC/IB=50

(V)

100m

CE(SAT)

V

10m

1m 10m 100m

ICColl ector Curr ent (A)

1.2

1.0

0.8

0.6

0.4

NormalisedGain

0.2

0.0

100°C

25°C

-55°C

1m 10m 100m

IC/IB=20

V

CE(SAT )vIC

ICColl ector Curr ent (A)

hFEvI

C

IC/IB=10

VCE=10V

210
180
150
120
90
60
30
0

0.40

IC/IB=20

0.35

0.30

0.25

(V)

0.20

0.15

CE(SAT)

V

0.10

0.05

1m 10m 100m

ICCollector Current (A)

1.0

IC/IB=20

)

0.8

FE

-55°C

100°C

25°C

V

CE(SAT )vIC

(V)

0.6

BE(SAT)

V

0.4

Typical Gain (h

1m 10m 100m

25°C

100°C

ICCollector Current (A)

V

BE(SAT )vIC

-55°C

1.0

VCE=10V

0.8

(V)

0.6

BE(ON)

V

0.4

-55°C

25°C

100°C

1m 10m 100m

ICColl ector Curr ent (A)

V

BE( ON)vIC

ISSUE 2 - DECEMBER 2001

4

THERMAL CHARACTERISTICS

FMMT459

1

100m

DC

1s

10m

Col lec tor Current ( A)

C

I

1m

100m 1 10 100

100ms

Single Pulse T

10ms

amb

=25°C

1ms

100µs

VCECollector-Emitter Voltage (V)

Safe Operating Area

200

150

D=0. 5

100

D=0. 2

50

0

Thermal Resistance (°C/W)

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0. 1

Pulse Widt h (s)

Transient Thermal Impedance

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

Max Power Dissipat ion (W)

0 20 40 60 80 100 120 140 160

Temperature (°C)

Derating Curve

ISSUE 2 - DECEMBER 2001

5

FMMT459

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

N

DIM Millimetres Inches

Min Max Min Max

A 2.67 3.05 0.105 0.120

B 1.20 1.40 0.047 0.055

C – 1.10 – 0.043

D 0.37 0.53 0.0145 0.021

F 0.085 0.15 0.0033 0.0059

G NOM 1.9 NOM 0.075

K 0.01 0.10 0.0004 0.004

L 2.10 2.50 0.0825 0.0985

NOM 0.95 NOM 0.037

N

© Zetex plc 2001

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ISSUE 2 - DECEMBER 2001

6