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FMMT459
500V Silicon NPN high voltage switching transistor
Summary
V
(BR)CEV
V
(BR)ECV
I
c(cont)
V
ce(sat)
> 500V
> 6V
= 150 mA
= 70 mV @ 50 mA
Description
This new high voltage transistor provides users with very efficient performance, combining low
V
CE(SAT)
in high efficiency Telecom and protected line switching applications.
high Hfe to give extremely low on state losses at 500V operation, making it ideal for use
Features
■ 6V reverse blocking capability
■ Low saturation voltage - 90mV @ 50mA
■ Hfe ⬎ 50 @ 30 mA
■ I
=150mA continuous
C
■ SOT23 package with Ptot 625mW
■ Specification can be supplied in other package outlines
Applications
■ Electronic test equipment
■ Offline switching circuits
■ Piezo actuators
■ RCD circuits
Ordering information
Device Reel size
(inches)
FMMT459TA 7 8 3,000
FMMT459TC 13 8 10,000
Tape width
(mm)
Quantity
per reel
Pin out - top view
Device marking
459
Issue 5 - August 2005 1 www.zetex.com
© Zetex Semiconductors plc 2005
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FMMT459
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Collector-emitter voltage V
Emitter-base voltage V
Emitter-collector voltage V
Peak pulse current I
Continuous collector current
*
Base current I
Power dissipation @ T
A
=25°C
*
Linear derating factor
Power dissipation @ T
A
=25°C
†
Linear derating factor
Operating and storage temperature range T
Thermal resistance
CBO
CEV
CEO
EBO
ECV
CM
I
C
B
P
D
P
D
j:Tstg
500 V
500 V
450 V
6V
6V
0.5 A
0.15 A
0.2 A
625
5
806
6.4
-55 to
mW
mW/°C
mW
mW/°C
°C
+150
Parameter Symbol Value Unit
Junction to ambient
Junction to ambient
NOTES:
* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions
† as above measured at t<5secs.
*
†
R
R
⍜JA
⍜JA
200 °C/W
155 °C/W
Issue 5 - August 2005 2 www.zetex.com
© Zetex Semiconductors plc 2005
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Thermal characteristics
FMMT459
1
100m
DC
1s
10m
Collector Current (A)
C
I
1m
100m 1 10 100
100ms
Single Pulse T
10ms
amb
1ms
100µs
=25°C
VCE Collector-Emitter Voltage (V)
Safe Operating Area
200
150
D=0.5
100
D=0.2
50
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Transient Thermal Impedance
Issue 5 - August 2005 3 www.zetex.com
© Zetex Semiconductors plc 2005
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FMMT459
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base
BV
CBO
500 700 V IC = 100A
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
BV
BV
BV
CEV
CEO
EBO
500 700 V IC = 10A,
0.3V > V
450 500 V
68 . 1 VI
= 10mA
I
C
= 100A
E
breakdown voltage
Emitter-base
breakdown voltage
BV
ECV
68 . 1 VI
= 1A,
C
0.3V > V
(reverse blocking)
Collector-emitter
I
CES
100 nA VCE=450V
cut-off current
Collector-base
I
CBO
100 nA VCB=450V
cut-off current
Emitter-base
I
EBO
100 nA VEB=5V
cut-off current
Static forward current
transfer ratio
Collector-emitter
V
CE(sat)
saturation voltage
Base-emitter
V
BE(sat)
saturation voltage
Base-emitter turn-on
V
BE(on)
voltage
Transition frequency f
H
FE
50 120
70
60
70
75
90
mV
mV
0.76 0.9 V
0.71 0.9 V
T
50 MHz IC = 10mA, VCE = 20V
IC = 30mA, VCE = 10V
I
= 50mA*, VCE = 10V
C
I
= 20mA, IB = 2mA
C
IC = 50mA, IB = 6mA
= 50mA, IB = 5mA
I
C
= 50mA, VCE = 10V
I
C
f = 20MHZ
Output capacitance C
Turn-on time t
Turn-off time t
obo
(ON)
(OFF)
5
113 ns IC = 50mA, VC = 100V
3450 ns IC = 50mA, VC = 100V
FVCB = 20V, f = 1MHZ
P
= 5mA, IB2 = 10mA
I
B1
= 5mA, IB2 = 10mA
I
B1
> -1V
BE
*
> -6V
BC
*
*
*
*
NOTES:
* Measured under pulsed conditions. Pulse width = 300 s; duty cycle <2%
Note: For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
Issue 5 - August 2005 4 www.zetex.com
© Zetex Semiconductors plc 2005
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Electrical characteristics
FMMT459
1
Tamb=25°C
IC/IB=50
(V)
100m
CE(SAT)
V
10m
1m 10m 100m
IC/IB=20
IC Collector Current (A)
V
Normalised Gain
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
25°C
-55°C
1m 10m 100m
CE(SA T)
v I
IC Collector Current (A)
hFE v I
C
C
VCE=10V
IC/IB=10
210
180
150
120
90
60
30
0
0.40
IC/IB=20
0.35
0.30
0.25
(V)
0.20
0.15
CE(SAT)
V
0.10
0.05
1m 10m 100m
100°C
25°C
IC Collector Current (A)
V
1.0
IC/IB=20
)
0.8
FE
(V)
0.6
BE(SAT)
V
0.4
Typical Gain (h
-55°C
25°C
100°C
1m 10m 100m
CE(SA T)
v I
IC Collector Current (A)
V
BE(SA T)
v I
-55°C
C
C
1.0
VCE=10V
0.8
-55°C
(V)
0.6
BE( ON)
V
0.4
1m 10m 100m
25°C
100°C
IC Collector Current (A)
V
v I
BE(ON)
Issue 5 - August 2005 5 www.zetex.com
© Zetex Semiconductors plc 2005
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Packaging details - SOT23
L
FMMT459
H
N
D
G
3 leads
M
B
A
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 Nom. 0.0375 Nom.
G 1.90 Nom. 0.075 Nom. - - - - -
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
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© Zetex Semiconductors plc 2005
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