Page 1
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 FEBRUARY 1997 ✪
FMMT4400
FMMT4401
PARTMARKING DETAILS: FMMT4400 - 1KZ
FMMT4401 - 1L
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
FMMT4400 FMMT4401
PARAMETER SYMBOL
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Current
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BEX
h
FE
TransferRatio
MIN. MAX. MIN. MAX.
40 40 V IC=1mA, IB=0
60 60 V IC=0.1mA, IE=0
66 VI
0.1 0.1
0.1 0.1
20
40
5020150
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance C
Input Capacitance C
V
CE(sat)
V
BE(sat)
f
T
obo
ibo
0.75 0.95
200 250 MHz IC=20mA,VCE=10V
0.4
0.75
1.2
6.5 6.5 pF VCB=5 V,IE=0
30 30 pF VBE=0.5V, IC=0
*Measured under pulsed conditions. Pulse width=300
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C unless otherwise stated)
20
40
80
100
40
0.75 0.95
µs. Duty cycle ≤ 2%
300
0.4
0.75VV
1.2
60 V
40 V
6V
600 mA
330 mW
-55 to +150 °C
CONDITIONS
UNIT
=0.1mA, IC=0
E
=35V
V
µA
CE
=0.4V
V
EB(off)
V
=35V
µA
CE
V
=3V
EB(off)
I
=0.1mA, VCE=1V
C
I
=1mA, VCE=1V
C
=10mA, VCE=1V
I
C
I
=150mA, VCE=1V*
C
=500mA, VCE=2V*
I
C
IC=150mA,IB=15mA*
=500mA,IB=50mA*
I
C
VVIC=150mA,IB=15mA*
I
=500mA,IB=50mA*
C
f=100kHz
f=100kHz
f=100kHz
E
B
PAGE NUMBER
Page 2
FMMT4400
FMMT4401
SWITCHING CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Turn-On Time t
Turn-Off Time t
on
off
amb
= 25°C )
35 ns VCC=30V, V
255 ns VCC=30V, IC=150mA
=150mA, IB1=15mA
I
C
(See Fig.1)
I
=15mA
B1=IB2
(See Fig. 2)
BE(off )
=2V
PAGE NUMBER
Page 3
Loading...