Datasheet FMMT413 Datasheet (Zetex) [ru]

FMMT413
SOT23 NPN silicon planar avalanche transistor

Summary

V

(BR)CES

= 150V, V

(BR)CEO

= 50V, I

USB

= 25A

Description

The FMMT413 is a NPN silicon planar bipolar transistor optimized for
avalanche mode operation. Tight process control and low inductance
packaging combine to produce high current pulses with fast edges, ideal
for laser diode driving.

Features

• Avalanche mode operation

• 50A peak avalanche current

• Low inductance packaging

Applications

• Laser LED drivers

• Fast edge generation

• High speed pulse generators

C

B

E

E

Ordering information

Device Reel size

(inches)

FMMT413TD 7 8 500

FMMT413TA 7 8 3,000

Tape width

(mm)

Quantity per

reel

C

B

Pinout - top view

Device marking

413

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FMMT413

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage BV

Collector-emitter voltage BV

Emitter-base voltage BV

Peak pulse current (25ns Pulse Width) I

Continuous collector current I

Power dissipation at T

amb

=25°C

CBO

CEO

EBO

CM

C

P

D

150 V

50 V

6V

50 A

100 mA

330 mW

Linear derating factor

Operating and storage temperature range T

j

, T

stg

-55 to +150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

R

⍜JA

378 °C/W

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FMMT413

Electrical characteristics (at T

= 25°C unless otherwise stated)

amb

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

BV

CBO

150 V

voltage

Collector-emitter

BV

CES

150 V IC = 100␮A

breakdown voltage

Collector-emitter

BV

CEO

50 V IC = 10mA

breakdown voltage

Emitter-base breakdown

BV

EBO

6VI

= 100␮A

E

voltage

Collector cut-off current I

Emitter cut-off current I

Collector-emitter saturation
voltage

Base-emitter saturation
voltage

CBO

EBO

V

CE(sat)

V

BE(sat)

100 nA VCB = 120V

100 nA VEB = 4V

150 mV IC = 10mA,

I

= 1mA

B

800 mV IC = 10mA,

= 1mA

I

B

Current in second

I

USB

22 A

breakdown (pulsed)

25 A

Static forward current

h

FE

50 IC = 10mA,

transfer ratio

Collector-emitter

L

ce

2.5 nH Standard SOT23

inductance

Transition frequency f

Output capacitance C

NOTES:

(*) Measured with a circuit possessing an approximate loop inductance of 12nH.

T

OBO

150 MHz IC = 10mA, VCE = 5V,

2pFV

=110V, CCE=4.7nF

V

C

=130V, CCE=4.7nF

V

C

= 10V

V

CE

leads

f = 20MHz

= 10V, IE = 0,

CB

f = 1MHz

(*)

(*)

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Typical characteristics

FMMT413

50

40

30

20

10

I(USB) - Avalanche current (A)

0

T

=25°C

AMB

I

=5mA/ns

B

p.r.f.=10kHz

050

100 150 200 250

VS - Supply voltage (V)

CCE=2x4.7nF

CCE=4.7nF

=2.2nF

C

CE

=1.0nF

C

CE

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FMMT413

Intentionally left blank

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Package outline - SOT23

L

FMMT413

H

N

D

G

3 leads

M

B

A

C

K

F

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Max. Max.

A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020

B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004

C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985

D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025

F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM

G 1.90 NOM 0.075 NOM - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

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