Page 1
Advance Technical Information
Trench Gate HiperFET
FMM50-025TF
N-Channel Power MOSFET
3
3
5
Phase Leg Topology
Symbol Test Conditions Maximum Ratings
T
J
T
JM
T
stg
V
T
T
F
ISOLD
L
SOLD
C
50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V
1.6mm (0.062 in.) from case for 10s 300 °C
Plastic body for 10s 260 °C
Mounting force 20..120/ 4.5..27 N/lb.
5
4
4
1
1
2
2
-55 ... +150 °C
150 °C
-55 ... +150 °C
T1
T2
V
DSS
I
D25
R
DS(on)
t
rr(typ)
= 250V
= 30A
≤≤
≤ 50m
≤≤
= 84ns
ISOPLUS i4-Pak
1
5
Features
TM
Isolated Tab
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt IS≤ IDM, VDD ≤ V
P
D
Symbol Test Conditions Characteristic Values
C
P
pins and mounting tab in the case
d
S ,dA
dS ,d
A
Weight 9 g
TJ= 25°C to 150°C 250 V
TJ= 25°C to 150°C, RGS = 1MΩ 250 V
Transient ± 30 V
TC= 25°C 30 A
TC= 25°C, pulse width limited by T
TC= 25°C 25 A
TC= 25°C 400 mJ
, TJ ≤ 150°C 15 V/ns
DSS
TC= 25°C 125 W
Min. Typ. Max.
Coupling capacitance between shorted 40 pF
pin - pin 1.7 mm
pin - backside metal 5.5 mm
JM
130 A
z
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z
Avalanche rated
z
Low Q
z
z
Advantages
z
z
z
z
z
Applications
z
z
z
z
z
z
G
Low Drain-to-Tab capacitance
Low package inductance
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100040(09/08)
Page 2
FMM50-025TF
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 1mA 250 V
VDS= VGS, ID = 250μA 2.5 4.5 V
VGS= ±20 V, VDS = 0V ± 100 nA
VDS= V
, VGS = 0V 1 μA
DSS
TJ = 125°C 150 μA
R
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
DS(on)
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
VGS= 10V, ID = 25A, Note 1 50 mΩ
V
= 10V, ID = 25A, Note 1 35 58 S
DS
4000 pF
VGS = 0V, VDS = 25 V, f = 1 MHz 410 pF
60 pF
Resistive Switching Times 14 ns
VGS = 15V, VDS = 0.5 z V
, ID = 25A 25 ns
DSS
RG = 5Ω (External) 47 ns
25 ns
78 nC
VGS= 10V, VDS = 0.5 z V
, ID = 25A 19 nC
DSS
22 nC
1.0 °C/W
0.15 °C/W
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0V 30 A
Repetitive, pulse width limited by T
IF = 50A, VGS = 0V, Note 1 1.5 V
84 n s
IF = 25A, -di/dt = 250A/μs
15.4 Α
= 100V, VGS = 0V
V
R
0.65 μC
3
Min. Typ. Max.
JM
200 A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
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