Page 1
Advance Technical Information
PolarHVTM HiPerFET
FMM22-06PF
N-Channel Power MOSFET
Phase leg Topology
3
3
5
5
4
4
1
1
2
2
Symbol Test Conditions Maximum Ratings
T
T
T
V
T
T
F
J
JM
stg
ISOLD
L
SOLD
C
50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V
1.6mm (0.062 in.) from case for 10s 300 °C
Plastic body for 10s 260 °C
Mounting force 20..120 / 4.5..27 N/lb.
-55 ... +150 °C
150 °C
-55 ... +150 °C
T1
T2
V
DSS
I
D25
R
DS(on)
t
rr(max)
= 600V
= 12A
≤≤
≤ 350m
≤≤
≤≤
≤ 200ns
≤≤
ISOPLUS i4-Pak
1
5
Features
TM
Isolated Tab
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt IS≤ IDM, VDD ≤ V
P
D
Symbol Test Conditions Characteristic Values
C
P
pins and mounting tab in the case
dS ,d
A
dS ,d
A
Weight 9 g
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C, RGS = 1MΩ 600 V
Continuous ± 30 V
Transient ± 40 V
TC= 25°C 12 A
TC= 25°C, pulse width limited by T
TC= 25°C 22 A
TC= 25°C 1.0 J
≤ 150°C 10 V/ns
DSS,TJ
TC= 25°C 130 W
Min. Typ. Max.
Coupling capacitance between shorted 40 pF
pin - pin 1.7 mm
pin - backside metal 5.5 mm
JM
66 A
z
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z
Avalanche rated
z
Low Q
z
z
Advantages
z
z
z
z
z
Applications
z
z
z
z
z
z
G
Low Drain-to-Tab capacitance
Low package inductance
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100038(09/08)
Page 2
FMM22-06PF
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 250μA 600 V
VDS= VGS, ID = 1mA 3.0 5.0 V
VGS= ±30 V, VDS = 0V ± 100 nA
VDS= V
DSS
25 μA
VGS = 0V TJ = 125°C 250 μA
R
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
DS(on)
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
VGS= 10V, ID = 11A, Note 1 350 mΩ
V
= 20V, ID = 11A, Note 1 15 20 S
DS
3600 pF
VGS = 0V, VDS = 25V, f = 1MHz 305 pF
38 pF
Resistive Switching Times 20 ns
VGS = 10V, VDS = 0.5 z V
, ID = 11A 20 ns
DSS
RG = 4Ω (External) 60 ns
23 ns
58 nC
VGS= 10V, VDS = 0.5 z V
, ID = 11A 20 nC
DSS
22 nC
0.95 °C/W
0.15 °C/W
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions
I
S
I
SM
V
SD
t
rr
Q
RM
VGS = 0V 12 A
Repetitive, pulse width limited by T
IF = 22A, VGS = 0V, Note 1 1.5 V
200 ns
IF = 22A, -di/dt = 100A/μs
= 100V, VGS = 0V
V
1.0 μC
R
3
Min. Typ. Max.
JM
66 A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
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