Datasheet FMG1G75US60H Datasheet (Fairchild Semiconductor)

FMG1G75US60H

Molding Type Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher e short circuit ruggedness is a required feature.

Features

• UL Certified No. E209204

• Short Circuit rated 10us @ T

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

• Fast & Soft Anti-Parallel FWD

Application

• AC & DC Motor Controls

• General Purpose Inverters

• Robotics

• Servo Controls

•UPS

= 100°C, VGE = 15V

C

= 2.2 V @ IC = 75A

CE(sat)

Package Code : 7PM-GA

E1/C2

C1

G1

E1

Internal Circuit Diagram

IGBT

E2

Absolute Maximum Ratings T

Symbol Description FMG1G75US60H Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

T

SC

P

D

Operating Junction Temperature -40 to +150 °C

T

J

T

stg

V

iso

Mounting Torque

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V Gate-Emitter Voltage ± 20 V Collector Curent @ TC = 25°C75 A Pulsed Collector Current 150 A Diode Continuous Forward Current @ TC = 100°C75 A Diode Maximum Forward Current 150 A Short Circuit Withstand Time @ TC = 100°C10 us Maximum Power Dissipation @ TC = 25°C 310 W

Storage Temperature Range -40 to +125 °C Isolation Voltage @ AC 1minute 2500 V Power Terminals Screw : M5 2.0 N.m Mounting Screw : M5 2.0 N.m

= 25°C unless otherwise noted

C

FMG1G75US60H

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B ∆T

I

CES

I

GES

CES VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage VGE = 0V, IC = 75mA 5.0 6.0 8.5 V Collector to Emitter

Saturation Voltage

= 75A, VGE = 15V

I

C

-- 2.2 2.8 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance Output Capacitance -- 672 -- pF Reverse Transfer Capacitance -- 180 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 7056 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 3.1 -- mJ

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 4.6 -- mJ

ts

T

sc

Q

g

Q

ge

Q

gc

Turn-On Delay Time Rise Time -- 40 -- ns Turn-Off Delay Time -- 70 -- ns Fall Time -- 110 200 ns Turn-On Switching Loss -- 1.4 -- mJ

= 300 V, IC = 75A,

V

CC

= 3.3Ω, V

R

G

GE

Inductive Load, T

= 15V

= 25°C

C

Turn-Off Switching Loss -- 1.7 -- mJ

Turn-On Delay Time Rise Time -- 50 -- ns Turn-Off Delay Time -- 80 -- ns Fall Time -- 250 -- ns Turn-On Switching Loss -- 1.6 -- mJ

= 300 V, IC = 75A,

V

CC

= 3.3Ω, V

R

G

Inductive Load, T

GE

= 15V

= 125°C

C

Turn-Off Switching Loss -- 3.0 -- mJ

= 300 V, V

V

Short Circuit Withstand Time Total Gate Charge

Gate-Emitter Charge -- 62 -- nC Gate-Collector Charge -- 130 -- nC

CC

@

TC = 100°C

= 300 V, IC = 75A,

V

CE

= 15V

V

GE

= 15V

-- 20 -- ns

10 -- -- us

-- 310 350 nC

FMG1G75US60H

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

= 25°C

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 75A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery Current

= 75A

F

di / dt = 150 A/us

Diode Reverse Recovery Charge

C

T

C

T

C

T

C

T

C

T

C

T

C

T

C

= 100°C = 25°C = 100°C = 25°C = 100°C = 25°C = 100°C

-- 1.9 2.8

-- 1.8 --

-- 90 130

-- 130 --

-- 7 9

-- 10 --

-- 315 590

-- 650 --

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJC

R

θCS

Weight Weight of Module -- 190 g

Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.4 °C/W Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.9 °C/W Case-to-Sink (Conductive grease applied) 0. 05 -- °C/W

V

ns

A

nC

FMG1G75US60H

200

Common Emitter

180

TC = 25 160 140

[A]

C

120 100

80 60

Collector Cu rrent, I

40 20

0

02468

20V

℃

15V

12V

Vge = 10V

Collector - Emitter Voltage, VCE [V]

200

Common E mitter V

= 15V

GE

T

= 25℃

C

160

= 125℃

T

C

[A]

C

120

80

Collector Current, I

40

0

0.3 1 10 20

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typ ic al S atu r at ion Voltage Characteristics

5

Common Emitter

V

= 15V

GE

[V]

4

CE

3

2

IC = 40A

1

Collector - Em itter Voltage, V

0

0 306090120150

Case Temperature, Tc [℃]

150A

75A

100

80

60

40

Load Current [A]

20

Duty cycle : 50%

℃

Tc = 100 Power Dissipation = 1 00W

0

0.1 1 10 100 1000

VCC = 300V Load Current : p ea k o f square wave

Frequency [Khz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequency

Temperature at Variant Current Level

20

Common Emitter

℃

T

= 25

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

Ic = 40A

75A

150A

Gate - E mitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

GE

20

Common Emitter

℃

T

= 125

C

16

[V]

CE

12

8

150A

4

Collector - Emitter Voltage, V

0

0 4 8 12 16 20

Ic = 40 A

75A

Gate - Emitter Voltage, VGE [V]

Fig 6. Saturation Voltage vs. V

GE

Capacitance [pF]

16000

14000

12000

10000

8000

6000

4000

2000

FMG1G75US60H

Common Emitter V

= 0V, f = 1MHz

GE

℃

T

= 25

C

Cies

Coes

Cres

0

110

Collector - Emitter Voltage, VCE [V]

1000

Common Emitt er V I

C

T T

= 300V, V

CC

= 75A

= 250C

C

= 1250C

C

= +/- 15V

GE

100

Switching Tim e [n s]

10

110

Gate Resistance, RG [Ω]

Ton

Tr

Fig 7. Capacitance Characteristics

Common Emitt er V

= 300V, VGE = +/- 15V

CC

I

= 75A

C

T

= 250C

C

T

= 1250C

C

1000

Switching Time [ns]

100

110

Gate Resistance, Rg [Ω]

Fig 9. Turn-Off Characteristics v s. Gate Resistance

Common Emitt er V

= 300V, VGE = +/- 15V

CC

R

= 3.3

Ω

G

TC = 250C T

= 1250C

C

100

Switching Tim e [n s]

Ton

Fig 8. Turn-On Characteristics vs. Gate Resistance

Common Emitt er V

= 300V, VGE = +/- 15V

CC

I

= 75A

C

10000

T

= 250C

C

T

= 1250C

Toff

Tf

C

Switching Loss [uJ]

1000

110

Gate Resistance, RG [Ω]

Eon

Eoff

Fig 10. Switching Loss vs. Gate Re sist ance

Common Emitt er

= 300V, VGE = +/- 15V

V

CC

R

= 3.3

Ω

G

TC = 250C

1000

T

= 1250C

C

Toff

Tr

Switching Tim e [n s]

100

Tf

Toff

Tf

10

20 40 60 80 100 120 140

Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Collector Current

20 40 60 80 100 120 140

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs. Collector Current

FMG1G75US60H

Common Emitt er V

= 300V, VGE = +/- 15V

CC

Ω

R

= 3.3

G

TC = 250C

10000

= 1250C

T

C

Eoff

Eon

1000

Eoff Eon

Switching Loss [uJ]

100

20 40 60 80 100 120 140

Collector Curr ent, IC [A]

Fig 13. Switching Loss vs. Collector Current

500

IC MAX. (Pulsed)

100

IC MAX. (Continuou s )

[A]

C

10

Single Nonrepetitive

1

Collector Current, I

Pulse TC = 25 Curves must be derated linerarly wit h increase in temperature

0.1

0.3 1 10 100 1000

DC Operat ion

℃

Collector-Emitter Voltage, VCE [V]

50us

100us

㎳

1

15

Common Emitter

Ω

RL = 4

℃

TC = 25

12

[ V ]

GE

9

6

3

VCC = 100 V

200 V

300 V

Gate - Emi tter Voltage, V

0

0 50 100 150 20 0 250 300 350

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

100

[A]

C

10

Collector Current, I

Safe Operating Are a

1

1 10 100 1000

Collector-Emitter Voltage, VCE [V]

VGE = 20V, TC = 100oC

Fig 15. SOA Characteristics

500

100

[A]

C

10

1

Collector Current, I

Single Nonrepetitive

Pulse TJ ≤ 125

VGE = 15V

RG = 3.3 Ω

0.1 0 100 200 300 400 500 600 700

℃

Collector-Emitter Voltage , VCE [V]

Fig 17. RBSOA Charac te ri st ic s

Fig 16. Turn-Off SOA Characteristics

1

/W]

℃

0.1

0.01

Thermal Response, Zthjc [

1E-3

10-510-410-310-210-110010

TC = 25 IGBT : DIODE :

Rectangular Pulse Duration [sec]

Fig 18. Transient Thermal Impedance

℃

1

FMG1G75US60H

200

Common Cathode V

= 0V

GE

T

= 25℃

C

160

= 125℃

T

C

[A]

F

120

80

Forward Current, I

40

0

01234

Forward Voltage, VF [V]

20

[A]

rr

10

[x10ns]

rr

5

Common Cathode di/dt = 150A/ T

= 25℃

C

Rever se Rec o very Time T

2

Peak Reverse Recovery Cu rrent I

0 1020304050607080

TC = 100℃

Forward Current, IF [A]

Fig 20. Reverse Reco ver y C haracteristicsFig 19. Forward Characteristics

T

rr

I

rr

㎲

Package Dimension

FMG1G75US60H

7PM-GA

Dimensions in Millimeters

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LIFE SUPPORT POLICY

â

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H5

Datasheet FMG1G75US60H Datasheet (Fairchild Semiconductor)

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