Datasheet FMC6G30US60 Datasheet (Fairchild Semiconductor)

June 2001

FMC6G30US60

Compact & Complex Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher e short circuit ruggedness is a required feature.

Features

• UL Certified No. E209204

• Short circuit rated 10us @ T

• High speed switching

• Low saturation voltage : V

• High input impedance

• Built in 3 phase rectifier circuit

• Fast & soft anti-parallel FWD

Applications

• AC & DC motor controls

• General purpose inverters

• Robotics

• Servo controls

= 100°C, V

C

(sat) = 2.2 V @ IC = 30A

CE

GE

= 15V

IGBT

Package Code : 21PM-BA

PP1

GU

R S T

NB

EU

GU

GV

EV

U

GV

GW

EW

V

GW

W

E

Internal Circuit Diagram

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Description FMC7G30US60 Units

Inverter

Converter

Common

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

SC

V

RRM

I

O

I

FSM 2

I

t

T

J

T

STG

V

ISO

Collector-Emitter Voltage 600 V Gate-Emitter Voltage ± 20 V Collector Current @ TC = 25°C30 A Pulsed Collector Current 60 A Diode Continuous Forward Current @ TC = 100°C30 A Diode Maximum Forward Current 60 A Maximum Power Dissipation @ TC = 25°C 125 W Short Circuit Withstand Time @ TC = 100°C10 us Repetitive Peak Reverse Voltage 1200 V Average Output Rectified Current 30 A Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive

300 A

1 Cycle Surge Current 369 A Operating Junction Temperature -40 to +150 °C Storage Temperature Range -40 to +125 °C Isolation Voltage @ AC 1minute 2500 V

Mounting Torque Mounting part Screw @ M4 1.25 N.m

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

2

s

FMC6G30US60 Rev. A3

FMC6G30US60

Electrical Characteristics of the IGBT

@ Inverter

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B ∆T

I

CES

I

GES

CES VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 30mA, VCE = V Collector to Emitter Saturation Voltage IC = 30A

,

VGE = 15V

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance Output Capacitance -- 310 -- pF Reverse Transfer Capacitance -- 74 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 1970 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1.74 2.4 mJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 2.49 3.4 mJ

ts

T

sc

Q

g

Q

ge

Q

gc

Turn-On Delay Time

-- 30 -- ns Rise Time -- 65 -- ns Turn-Off Delay Time -- 54 80 ns Fall Time -- 138 200 ns Turn-On Switching Loss -- 0. 92 -- mJ

= 300 V, IC = 30A,

V

CC

= 7Ω, V

R

G

Inductive Load, T

GE

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 0.82 -- mJ

Turn-On Delay Time

-- 34 -- ns Rise Time -- 67 -- ns Turn-Off Delay Time -- 60 90 ns Fall Time -- 281 400 ns Turn-On Switching Loss -- 0. 93 -- mJ

V

= 300 V, IC = 30A,

CC

R

= 7Ω, V

G

GE

= 15V,

Inductive Load, T

= 125°C

C

Turn-Off Switching Loss -- 1.56 -- mJ

= 300 V, V

V

Short Circuit Withstand Time Total Gate Charge

Gate-Emitter Charge -- 17 25 nC Gate-Collector Charge -- 39 55 nC

CC

@

TC = 100°C

= 300 V, IC = 30A,

V

CE

= 15V

V

GE

= 15V

GE

10 -- -- us

-- 85 120 nC

FMC6G30US60

Electrical Characteristics of the DIODE

@ Inverter

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 30A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery Current

= 30A

F

di / dt = 60 A/us

Diode Reverse Recovery Charge

Electrical Characteristics of the DIODE

= 25°C

C

= 100°C

T

C

= 25°C

T

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

@ Converter

TC = 25°C unless otherwise noted

-- 2.0 2.8

-- 2.0 --

-- 90 180

-- 130 --

-- 2.2 3.4

-- 3.4 --

-- 400 600

-- 880 --

T

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

I

RRM

FM

Diode Forward Voltage IF = 30A

Repetitive Reverse Current VR = V

RRM

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

-- 1.1 1.5

-- 1.0 --

-- -- 8

-- 5 --

T

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

Inverter Converter R

θJC

R

θJC θJC

Weight Weight of Module 270 -- g

Junction-to-Case (IGBT Part, per 1/6 Module) -- 1.0 °C/W Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.2 °C/W Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.0 °C/W

V

ns

A

nC

V

mA

FMC6G30US60

[A]

Collector Current, I

C

90

Common Emitter

80

V

GE

T

C

70

T

C

60

50

40

30

20

10

0

= 15V

━━

= 25℃ = 125℃ ------

110

Collector - Emitter Voltage, VCE [V]

90

Common Emitter

℃

TC = 25

80

70

[A]

C

60

50

40

30

Collector Current, I

20

10

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

5

Common Emitter V

= 15V

GE

[V]

4

CE

3

2

1

Collector - Emitter Voltage, V

0

-50 0 50 100 150

Case Temperature, TC [℃]

60A

45A

30A

IC = 15A

Characteristics

40

35

30

25

20

15

Load Current [A]

10

Duty cycle : 50%

5

0

℃

T

= 100

C

Power Dissipation = 45W

0.1 1 10 100 1000

VCC = 300V Load Current : peak of s q uar e w a v e

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequency

Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

4 8 12 16 20

30A

IC = 15A

60A

Common Emitter

℃

= 25

T

C

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

4 8 12 16 20

30A

IC = 15A

Common Emitter T

60A

Gate - Emitter Voltage, VGE [V]

Fig 6. Saturation Voltage vs. V

GE

= 125

C

℃

FMC6G30US60

3500

3000

2500

2000

1500

Cies

Coes

Common Emitter V

= 0V, f = 1MHz

GE

℃

= 25

T

C

Capacitance [pF]

1000

500

0

Cres

110

Collector - Emitter Voltage, VCE [V]

Fig 7. Capacitance Characteristics

Common Emitter

= 300V, VGE = ±15V

V

CC

I

= 30A

C

━━

T

= 25℃

1000

C

T

= 125℃ ------

C

Toff

Switchi n g Time [ns]

100

110100

Gate Resistance, RG [Ω]

Tf

1000

Common Emitter VCC = 300V, VGE = ±15V IC = 30A

━━

TC = 25℃ TC = 125℃ ------

100

Ton

Tr

Switching Time [ns]

10

110100

Gate Resistance, RG [Ω]

Fig 8. Turn-On Characteristics vs. Gate Resistance

10000

Common Emitter V

= 300V, VGE = ±15V

CC

I

= 30A

C

━━

T

= 25℃

C

T

= 125℃ ------

C

1000

Switching Loss [uJ]

100

110100

Gate Resistance, RG [Ω]

Eon

Eoff

Fig 9. Turn-Off Characteristics v s.

Fig 10. Switching Loss vs. Gate Re sist ance

Gate Resistance

1000

Comm on E m it t er V

= ±15V, RG = 7Ω

GE

━━

TC = 25℃ T

= 125℃ ------

C

100

Ton

Tr

Switching Time [ns]

10

15 30 45 60

Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Collector Current

1000

Common Emitter

= ±15V, RG = 7

V

GE

TC = 25℃ T

= 125℃ ------

C

Toff

Tf

Toff

Switching Time [ns]

100

Tf

15 30 45 60

━━

Ω

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs. Collector Current

FMC6G30US60

10000

Common Emitter V

= ±15V, RG = 7Ω

GE

━━

TC = 25℃ T

= 125℃ ------

C

1000

Eoff

Eon

Eoff

Switchi n g Lo ss [uJ]

100

15 30 45 60

Collector Current, IC [A]

Fig 13. Switching Loss vs. Collector Current

200 100

IC MAX. (Pulsed)

IC MAX. (Continuous)

[A]

C

10

DC Operation

Single Nonrepetitive

1

Collector Current, I

Pulse T Curves must be derated linearly w it h increase in temper at ur e

0.1

0.3 1 10 100 1000

C

= 25

℃

Collector-Em i tter Volta ge, VCE [V]

50us

100us

㎳

1

15

Common Emitter RL = 10Ω

℃

TC = 25

12

[ V ]

GE

9

6

3

Gate - Emitter Voltage, V

0

0 20406080100

VCC = 100 V

300 V

200 V

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

100

[A]

C

10

Collector Current, I

Safe Op era tin g Ar ea

1

1 10 100 1000

VGE = 20V, TC = 100

Collector-Emitter Voltage, VCE [V]

℃

Fig 15. SOA Characteristics

100

[A]

10

C

1

Collector Current, I

Single Nonrepetitive Pulse TJ ≤ 125 VGE = 15V RG = 7 Ω

0.1 0 100 200 300 400 500 600 700

℃

Collector-Emitter Voltage, VCE [V]

Fig 17. RBSOA Charac te ri st ic s

Fig 16. Turn-Off SOA Characteristics

5

/W]

1

℃

0.1

Thermal Response, Zthjc [

0.01

0.005 10-510-410-310-210-110010

IGBT : DIODE :

Rectangular Pulse Duration [sec]

Fig 18. Transient Thermal Impedance

1

FMC6G30US60

90

Common Cathode V

= 0V

80

GE

= 25℃

T

C

T

= 125℃

70

C

60

[A]

F

50

40

30

20

Forward Current, I

10

0

01234

Forward Voltage, VF [V]

Fig 19. Forward Characteristics

20

[A]

10

rr

[x10ns]

rr

1

Reverse Recovery Time, T

0.5

Peak Reverse Recover y Cu rrent, I

5 1015202530

Commo n Ca th od e di/dt = 60A/us T

= 25℃

C

TC = 100℃

Forward Current, IF [A]

Fig 20. Reverse Reco ver y C haracteristics

T

rr

I

rr

Package Dimension

21PM-BA (FS PKG CODE BK)

FMC6G30US60

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

CEx™

A

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2

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E EnSigna™ FACT™ FACT Quiet Series™

STAR*POWER is used under license

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H3