Page 1
Discrete POWER & Signal
FMBA06
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT-6
Mark: .1G
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 33.
FMBA06
Technologies
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Emitter-Base Voltage 4.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FMBA06
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
700
5.6
Thermal Resistance, Junction to Ambient 180
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
Page 2
NPN Multi-Chip General Purpose Amplifier
(continued)
FMBA06
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 80 V
Emitter-Base B reakdown Voltage
I
= 100 µA, IC = 0
E
4.0 V
Collector-Cutoff Current VCE = 60 V, IB = 0 0.1
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
µA
µA
ON CHARACTERISTICS
h
FE
V
V
sat
CE(
BE(on)
DC Current Gain IC = 10 mA, VCE = 1.0 V
= 100 mA, VCE = 1.0 V
I
Collector-Em i tter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V
)
C
Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
100
100
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
150 MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
T ypical Pulsed Current Gain
vs Collector Current
200
125 °C
150
25 °C
100
- 40 ºC
50
0.001 0.01 0.1
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (A)
C
V = 1V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
- COLLECTOR EMITTER VOLTAGE (V)
CESAT
0.5
0.4
0.3
0.2
0.1
β
= 10
125 °C
25 °C
- 40 ºC
0
0.1 1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
Page 3
Typical Characteristics (continued)
FMBA06
NPN Multi-Chip General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
1
0.8
0.6
0.4
BESAT
V - BASE EMITTER VOLTAGE (V)
0.1 1 10 100 1000
- 40 ºC
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Collector-Cutoff Current
vs. Ambient Temperature
10
V = 80 V
CB
1
0.1
0.01
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
1 10 100 1000
BEON
V - BASE EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
- 40 ºC
25 °C
125 °C
V = 5V
CE
Collector Saturation Region
2
1.5
1
I =
1 mA
0.5
C
10 mA
T = 25°C
A
100 mA
CBO
0.001
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
117
116
115
114
113
112
111
CER
0.1 1 10 100 1000
BV - BREAKDOWN VOLT AGE (V)
RESISTANCE (k )
Ω
0
CE
4000 10000 20000 30000 50000
V - COLLECTOR-EMITTER VOLTAGE (V)
I - BASE CURRENT (uA)
B
Input and Output Capacitance
vs Reverse Voltage
100
10
1
CAPACIT ANCE (pF)
0.1
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
CE
f = 1.0 MHz
C
ib
C
ob
Page 4
Typical Characteristics (continued)
FMBA06
NPN Multi-Chip General Purpose Amplifier
(continued)
Gain Bandwidth Product
vs Collector Current
400
V = 5V
ce
350
300
250
200
150
100
1102050100
T
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
1
SOT-6
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
o
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