Datasheet FMB3906 Datasheet (Fairchild Semiconductor)

FFB3906 / FMB3906 / MMPQ3906

g

FFB3906

E2

B2

C1

SC70-6

Mark: .2A

NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

pin #1

C2

B1

E1

FMB3906

C2

E1

C1

B1

pin #1

SuperSOT-6

Mark: .2A

B2

E2

Mark: MMPQ3906

MMPQ3906

B3

E3

B2

E2

B1

E1

C1

SOIC-16

pin #1

B4

E4

C3

C2

C1

PNP Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66.

Absolute Maximum Ratings* T

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitt er Vol t age 40 V Collector-Base Voltage 40 V Emitter-Base Voltage 5.0 V Collector Current - Continuous 200 mA Operating and Stora ge Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

A

C

°

C4

Thermal Characteristics T

= 25°C unless otherwise noted

A

Symbol Characteristic Max Units

FFB3904 FMB3904 MMPQ3904

P

D

R

θ

JA

 1998 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Effective 4 Die Each Die

300

2.4

700

5.6

415 180

1,000

8.0

125 240

mW

mW/°C

°

C/W

°

C/W

°

C/W

PNP Multi-Chip General Purpose Amplifier

(continued)

FFB3906 / FMB3906 / MMPQ3906

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

Collector-Emitter Breakdown

IC = 1.0 mA, IB = 0 40 V Voltage* Collector-Base Breakdown Vol tage

Emitter-Base B reakdown Voltage

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

E

Base Cutoff Current VCE = 30 V, V

= 3.0 V 50 nA

BE

40 V

5.0 V

Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA

ON CHARACTERISTICS

h

FE

V V

CE(sat)

BE(sat)

DC Current Gain * IC = 0.1 mA, VCE = 1.0 V

= 1.0 mA, VCE = 1.0 V

I

C

= 10 mA, VCE = 1.0 V

I

C

= 50 mA, VCE = 1.0 V

I

C

= 100 mA, VCE = 1.0 V

I

C

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

= 50 mA, IB = 5.0 mA

I

C

Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

= 50 mA, IB = 5.0 mA

I

C

60 80

100

300 60 30

0.25

0.4

0.65 0.85

0.95

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

NF Noise Figure

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

f = 100 MHz

Output Capacitance VCB = 5.0 V, IE = 0,

f = 100 kHz

Input Capacitance VEB = 0.5 V, IC = 0,

f = 100 kHz

(except MMPQ3906)

IC = 100 µA, VCE = 5.0 V,

=1.0kΩ, f=10 Hz to 15.7 kHz

R

S

450 MHz

3.0 pF

8.0 pF

2.5 dB

V V V V

SWITCHING CHARACTERISTICS

t

d

t

r

t

s

t

f

*

Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Delay Time VCC = 3.0 V, VBE = 0.5 V, 15 ns Rise Time IC = 10 mA, IB1 = 1.0 mA 20 ns Storage Time VCC = 3.0 V, IC = 10mA 110 ns Fall Time IB1 = IB2 = 1.0 mA 40 ns

Spice Model

PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)

T ypical Characteristics

FFB3906 / FMB3906 / MMPQ3906

PNP Multi-Chip General Purpose Amplifier

(continued)

Typ ical Pu lsed Cu rr e nt G ain

vs Collector Current

250

200

150

100

FE

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

50

0.1 0.2 0.5 1 2 5 10 20 50 100

I - COLLECTOR CURRENT (mA)

C

V = 1.0V

CE

Base-Emitter Saturation

Voltage vs Collector Current

β

= 10

1

0.8

0.6

0.4

0.2

BESAT

0

V - BASE EMITTER VOL TA GE (V)

110100200

- 40 ºC

25 °C

I - COLLECTO R CURRE NT (mA)

C

125 ºC

Collector-E mitt er S at urati on

Voltage vs Collector Current

CESAT

V - COLLECTO R EM IT TER VO LT AGE (V)

0.3

0.25

0.2

0.15

0.1

0.05

= 10

β

25 °C

125 ºC

- 40 ºC

0

110100200

I - COLLECTO R CURRENT (m A)

C

Base Emitter ON Voltage vs

Collector Current

1

0.8

0.6

0.4

0.2

0

0.1 1 10 25

BE(ON)

V - BASE EMITTER ON VOLTAGE (V)

- 40 ºC 25 °C

125 ºC

V = 1V

CE

I - COLLEC TOR CURRE NT (m A)

C

Collector-Cutoff Current

vs Ambient Temperature

100

V = 25V

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

0.01 25 50 75 100 125

T - AMBIENT TEMPERATURE ( C)

A

º

Common-Base Open Circuit

Input and Output Capacitance

vs Reverse Bias Voltage

10

8

6

4

2

CAPACITANCE (pF)

0

0.1 1 10

C

obo

REVERSE BIAS VOLTAGE (V)

C

ibo

Typical Characteristics (continued)

)

FFB3906 / FMB3906 / MMPQ3906

PNP Multi-Chip General Purpose Amplifier

(continued)

Noise Figure vs Frequency

6

5

4

3

2

NF - NOIS E FIGU RE ( d B)

1

0

0.1 1 10 100

f - FREQUENCY (kHz)

V = 5.0V

CE

I = 100 µA, R = 200

C

I = 1.0 mA, R = 200

C

I = 100 µA, R = 2.0 k

C

S

Switching Times

vs Collector Curren t

500

t

100

TIME (nS)

10

I = I =

B1CB2

1

1 10 100

I

c

10

I - COLLECTOR CURRENT (mA

s

t

f

t

r

t

d

Nois e F igure vs Source Resista nce

12

10

I = 1.0 mA

8

Ω

6

4

NF - NOISE FIGURE (dB)

2

0

0.1 1 10 100

C

R - SOURCE RESISTAN CE ( )

S

V = 5.0V

CE

f = 1.0 kHz

I = 100 µA

C

k

Ω

Turn On and Turn Off Times

vs Collector Current

500

t

off

on

100

I

I =

B1

BE(OFF)

I = I =

B1

c

10

I

c

B2

10

t

on

V = 0.5V

TIME (nS)

10

t

off

1

1 10 100

I - COLLE CTOR CURRENT (mA

Power Dissipation vs

Ambient Temperature

1

SOT-6

0.75

0.5

SC70-6

0.25

D

P - POWER DISSIPATION (W)

0

0 25 50 75 100 125 150

SOIC-16

TEMPERATURE ( C)

º

Typical Characteristics (continued)

FFB3906 / FMB3906 / MMPQ3906

PNP Multi-Chip General Purpose Amplifier

(continued)

4

_

100

re

h - VOLT AGE FEEDBACK RATIO (x10 )

V olt age Feedback Ratio

10

1

0.1 1 10

I - COLLECTO R CURRENT (mA)

C

Output Admi tta n ce

1000

µ

100

oe

h - OUTPUT ADMITTANCE ( mhos)

10

0.1 1 10

I - COL LECTO R CURRENT (mA)

C

V = 10 V

CE

f = 1.0 kHz

Input Im pedan c e

10

Ω

1

ie

h - INPUT IMPEDANCE (k )

0.1

0.1 1 10

I - COLLECT OR CURR ENT (mA)

C

V = 10 V

CE

f = 1.0 kHz

Current Gain

1000

500

200

100

50

fe

h - CURRENT GAIN

20

10

0.1 1 10

I - COLLECTOR CURRENT (mA)

C

V = 10 V

CE

f = 1.0 kHz

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™ E2CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™

UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.