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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Features
N channel 40V MOSFET for automotive application
TO220F: wide pin package (for high current)
Applications
Automotive: EPS motor driver application
Automotive: Other motor driver and solenoid driver
application
Internal Equivalent Circuit
Ｄ(2)
Ｇ(1)
Ｓ(3)
Absolute maximum ratings
Characteristic Symbol Rating Unit
Package
FM20 (TO220 Full Mold)
Key Specifications
(Ta=25°C）
Drain to Source Voltage V
Gate to Source Voltage V
Continuous Drain Current I
Pulsed Drain Current I
Maximum Power Dissipation P
Single Pulse Avalanche Energy E
Avalanche Current I
Maximum Drain to Source dv/dt 1 dv/dt 1
Peak diode recovery dv/dt 2 dv/dt 2
Peak diode recovery di/dt di/dt
Channel Temperature Tch 150 ℃
Storage Temperature Tstg -55～150 ℃
DSS
GSS
D
D(pulse)
D
AS
AS
※１
※
2
※
2
※
3
※
3
40 V
±20 V
±70 A
±140 A
35 （Tc=25℃） W
400 mJ
25 A
0.3 V/ns
1.0 V/ns
100 A/μs
※1 PW≦100μsec. duty cycle≦1％
※2 V
※3 I
=20V, L=1mH, IL=20A, unclamped, Rg＝50Ω，See Fig.1
DD
=25A，See Fig.2
SD
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Electrical characteristics
(Ta=25°C）
Limits
Characteristic Symbol Test Conditions
MIN TYP MAX
Unit
Drain to Source breakdown Voltage
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
(BR)DSSID
I
GSS
I
DSS
V
TH
Re(yfs)
R
DS(ON)
Ciss 5100
Coss 1200
=100μA,VGS=0V
VGS=±15V
VDS=40V, VGS=0V
VDS=10V, ID=1mA
V
=10V, ID=35A
DS
ID=35A, VGS=10V
V
=10V
DS
V
=0V
GS
40 V
±2 μA
100 μA
2.0 3.0 4.0 V
30 50 S
5.0 6.0 mΩ
f=1MHz
Crss
td(on)
tr
td(off)
I
=35A, V
D
=22Ω,RGS=50Ω
R
G
DD
≒20V
RL=0.57Ω, VGS=10V
860
100
100
300
See Fig.3
tf
130
pF
ns
Source-Drain Diode Forward Voltage
Source-Drain Diode Reverse Recovery Time
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
SD
trr
Rth(ch-c)
Rth(ch-a)
ISD=50A,VGS=0V
=25A
I
SD
ｄi/dt=50A/us
0.9 1.2 V
100 ns
3.57
62.5
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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℃/W
℃/W
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Characteristic Curves (Tc=25℃)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Characteristic Curves (Tc=25℃)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Characteristic Curves (Tc=25℃)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Characteristic Curves (Tc=25℃)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Fig.1 Unclamped Inductive Test Method
EAS=
1
･L･ILP2・
2
V
(BR)DSS
−
DD(BR)DSS
VV
(ａ)
Test Circuit (b) Waveforms
Fig.2 Diode Reverse Recovery Time Test Method
Fig.3 Switching Time Test Method
(ａ)
The information included herein is believed to be accurat
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
(ａ) Test Circuit
(b) Waveforms
V
GS
V
DS
t
d(on)
Test Circuit (b) Waveforms
e and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
t
r
t
on
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t
d(off)
90%
10%
90%
10%
t
f
t
off
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SANKEN ELECTRIC
ＦＬＤ４７０ Nov. 2010
Outline
FM20 (TO220 Full Mold)
(1) Gate
(2) Drain (Back Side)
(1) Gate
(3) Source
Weight Approx. 2g
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
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