Datasheet FK16SM-5 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FK16SM-5

HIGH-SPEED SWITCHING USE

FK16SM-5

DSS ................................................................................250V

¡V
¡r

DS (ON) (MAX) ..............................................................0.31Ω

¡I

D ......................................................................................... 16A

¡Integrated Fast Recovery Diode (MAX.) ........150ns

OUTLINE DRAWING Dimensions in mm

4.5

1.5

4.4

0.6 2.8

2

1.0

5.45

q

15.9MAX.

r

φ 3.2

qwe

5.45

4

wr

e

5.0

2

4

q GATE
w DRAIN
e SOURCE
r DRAIN

20.0

19.5MIN.

TO-3P

APPLICATION

Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.

MAXIMUM RATINGS (Tc = 25°C)

Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature

—

Weight

VGS = 0V
VDS = 0V

Typical value

250
±30

16
48
16
48

125
–55 ~ +150
–55 ~ +150

4.8

V
V
A
A
A
A

W

°C
°C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω

IS = 8A, VGS = 0V
Channel to case
IS = 16A, dis/dt = –100A/µs

MITSUBISHI Nch POWER MOSFET

FK16SM-5

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

250
±30

—
—

2
—
—

6.5
—
—
—
—
—
—
—
—
—
—

—
—
—
—

3

0.24

1.92

10.0

1050

220

45
20
40

110

50

1.5
—
—

—
—

±10

0.31

2.48
—
—
—
—
—
—
—
—

2.0

1.00

150

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

200

(W)

160

D

120

80

40

POWER DISSIPATION P

0

CASE TEMPERATURE T

C

(°C)

MAXIMUM SAFE OPERATING AREA

2

10

7
5

3
2

(A)

D

1

10

7
5

3
2

0

10

7
5

10

3
2

–1

0

10

TC = 25°C
Single Pulse

23 5710

1

23 5710223 5710

DRAIN CURRENT I

200150100500

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms

DC

DS

(V)

3

Feb.1999

MITSUBISHI Nch POWER MOSFET

FK16SM-5

HIGH-SPEED SWITCHING USE

OUTPUT CHARACTERISTICS

(TYPICAL)

50

40

PD =
125W

VGS = 20V

10V

TC = 25°C
Pulse Test

7V

30

20

10

DRAIN CURRENT ID (A)

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

20

(TYPICAL)

TC = 25°C
Pulse Test

16

DS (ON) (V)

12

ID = 30A

6V

5V

OUTPUT CHARACTERISTICS

20

16

VGS=20V

10V

(TYPICAL)

PD = 125W

TC = 25°C
Pulse Test

12

8

4

DRAIN CURRENT ID (A)

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE RESISTANCE VS.

DRAIN CURRENT

0.5
TC = 25°C
Pulse Test

(TYPICAL)

VGS = 10V

0.4

0.3

DS (ON) (Ω)

6V

5.5V

5V

4.5V

20V

8

4

VOLTAGE V

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

40

(TYPICAL)

32

24

16

8

DRAIN CURRENT ID (A)

0

0 4 8 12 16 20

16A

8A

GS (V)

TC = 25°C
VDS = 50V
Pulse Test

0.2

0.1

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

2310

5710023 5710123 5710

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

10

1

(TYPICAL)

7
5

3

fs (S)

2

0

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

–1

10

0

10

23 5710

D (A)

TC = 25°C

75°C

125°C

VDS = 10V
Pulse Test

1

23 5710

2

2

GATE-SOURCE VOLTAGE V

GS (V)

DRAIN CURRENT I

D (A)

Feb.1999

MITSUBISHI Nch POWER MOSFET

FK16SM-5

HIGH-SPEED SWITCHING USE

DRAIN-SOURCE VOLTAGE

5

3
2

2

10

7
5

3
2

1

10

CAPACITANCE

7
5

Ciss, Coss, Crss (pF)

3

Tch = 25°C

2

f = 1MHz

GS

= 0V

V

0

10

23 5710

DRAIN-SOURCE VOLTAGE V

GATE-SOURCE VOLTAGE

20

16

Tch = 25°C
ID = 16A

(V)

GS

12

8

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 5710

VS.GATE CHARGE

(TYPICAL)

V

DS

= 50V

100V

200V

Ciss

Coss

Crss

DS

2

(V)

23

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7
5

3
2

t

d(off)

10

2

7

t

5

3

SWITCHING TIME (ns)

2

1

10

0

10

f

t

r

t

d(on)

23 5710

DRAIN CURRENT ID (A)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

TC = 125°C

32

(A)

S

24

16

Tch = 25°C
VDD = 150V
VGS = 10V
R

GEN

= R

GS

1

23 5710

VGS = 0V
Pulse Test

75°C

25°C

= 25Ω

2

4

GATE-SOURCE VOLTAGE V

0

0 20406080100

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

DS (ON)

10

1

7
5

VGS = 10V

D

= 1/2I

I
Pulse Test

(TYPICAL)

D

3
2

0

10

7
5

3
2

–1

10

0

50 100 150 200 250

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

8

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0
VDS = 10V

ID = 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

SD

(V)

Feb.1999

MITSUBISHI Nch POWER MOSFET

FK16SM-5

HIGH-SPEED SWITCHING USE

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

(BR) DSS

(BR) DSS

VGS = 0V
ID = 1mA

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

DIODE REVERSE VS.

SOURCE CURRENT d

3

10

7
5

3
2

2

trr

10

7
5

3

REVERSE RECOVERY TIME trr (ns)

10

10

2

7
5

3
2

Irr

1

0

10123 5710

is/dt CHARACTERISTIC

(TYPICAL)

IS = 16A
V

GS = 0V

V

DD = 150V

Tch = 25°C
T

ch = 150°C

2

23 5710

SOURCE CURRENT CHARACTERISTIC

3

10

7
5

3
2

2

10

7
5

3
2

REVERSE RECOVERY TIME trr (ns)

1

10

0

10

TRANSIENT THERMAL IMPEDANCE

10

10

7
5

3
2

10
7
5

3
2

10
7
5

3
2

3

2

1

0

–1

1

10

7

rr (A)

5
3

2

D=1

0

10

7

0.5

5

0.2

3
2

0.1

–1

10

7
5

3
2

–2

10

REVERSE RECOVERY CURRENT I

10

–4

23 57

0.05

0.02

0.01

Single Pulse

–3

23 57 23 57 23 57

10

DIODE REVERSE VS.

(TYPICAL)

dis/dt = –100A/µs
V

GS = 0V
DD = 150V

V

trr

Irr

Tch = 25°C
T

ch = 150°C

23 5710

1

23 5710

SOURCE CURRENT IS (A)

CHARACTERISTICS

10

–2

10

–1

10023 57

PDM

tw

D=

T

tw

T

2

10
7

5

3
2

1

10
7

5

3
2

0

10

2

10123 57

rr (A)

REVERSE RECOVERY CURRENT I

2

10

SOURCE CURRENT dis/dt (–A/µs)

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

PULSE WIDTH t

w (s)

Feb.1999