Datasheet fjpf9020 Datasheet

Page 1
FJPF9020
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High Collector-Base Breakdown Voltage : BV
• High DC Current Gain : h
• Industrial Use
= 550 @ V
FE
CE
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage - 550 V Collector-Emitter Voltage - 550 V Emitter-Base Voltage - 6 V Collector Current (DC) - 2 A Collector Current (Pulse) - 4 A Collector Dissipation (TC=25°C) 15 W Junction Temperature 150 °C Storage T emperature - 55 ~ 150 °C
CBO
= -4V, IC = -1A (Typ.)
TC=25°C unless otherwise noted
1
TO-220F
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
R
1600Ω≅
R
2150Ω≅
R2
E
FJPF9020
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO ICBO IEBO hFE
(sat) Collector-Emitter Saturation Voltage IC = - 1A, IB = - 20mA -1.0 - 1.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 1A, IB = - 20mA -1.5 - 2.0 V
V
BE
Collector-Base Breakdown Voltage IC = - 100uA, IE = 0 - 550 V Collector-Emitter Breakdown Voltage IC = - 500uA, IB = 0 - 550 V Emitter-Base Breakdown Voltage IE = - 200mA, IC = 0 -6 V Collector Cut-off Current V Emitter Cut-off Current V DC Current Gain V
= - 550V, IE = 0 -100 µA
CE
= - 6V, IC = 0 -10 -20 mA
EB
= - 4V, IC = - 1A 400 550 700
CE
©2002 Fairchild Semiconductor Corporation Rev. A, June 2002
Page 2
Typical Characteristics
FJPF9020
-3.0
-2.5
-2.0
-1.5
-1.0
[A], COLLECTOR CURRENT
-0.5
C
I
-0.0
-0 -1 -2 -3 -4 -5
IB = - 40mA
IB = - 15mA
IB = - 3mA
IB = - 1.5mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
1000
VCE = - 4V
125oC
75oC
100
, DC CURRENT GAIN
FE
H
10
- 0.03
-0.1 -1
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic Figure 2. DC current Gain
-4
-3
-2
-1
(sat) [V], SATURATION VOLTAGE
CE
V
-0
-1E-3 -0.01 -0.1
IB [A], BASE CURRENT
IC = - 2A
IC = - 1A
- 0.4
-3
IC / IB = 50
-2
125oC
75oC
-1
(sat) [V], SATURATION VOLTAGE
CE
V
-0
- 0.2
25oC
- 25oC
IC [A], COLLECTOR CURRENT
- 25oC
-1
25oC
- 4
- 4
Figure 3. V
-2.0
CE
VCE = - 4V
-1.5
-1.0
-0.5
[A], COLLECTOR CURRENT
C
I
-0.0
125oC
75oC
-0.0 -0.5 -1.0 -1.5 -2. 0 -2.5 -3.0
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage
25oC
- 25oC
1000
100
Cob [pF], OUTPUT CAPACITANCE
10
-0 -5 -10 -15 -20 -25
VCB [V], COLLECTOR-BASE VOLTAGE
f = 1MHz
Rev. A, June 2002
Page 3
FJPF9020
Typical Characteristics
-10
IC (Pulse)
IC (DC)
-1
-0.1
-0.01
[A], COLLECTOR CURRENT
Single Pulse
C
I
-1E-3
o
C
Ta=25
-1 -10 -100 -1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
(Continued)
10ms100ms
20
15
10
5
[W], COLLECTOR POWER DISSIPATION
C
0
P
0 25 50 75 100 125 150 175
TC [oC], CASE TEMPERATURE
Figure 7. Forward Bias Safe Operating Area Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002
Page 4
Package Demensions
±0.10
3.30
±0.20
15.80
10.16 (7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54 (0.70)
FJPF9020
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10 –0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, June 2002
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™
2
E
CMOS™ EnSigna™ FACT™ FACT Quiet series™
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FAST
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OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER
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SMART START™
VCX™
SPM™ Stealth™ SuperSOT™-3
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SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™
®
UltraFET
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. H7
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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