Page 1
FJPF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BV
• High Switching Speed : t
(typ.) =0.1µs
F
• For Color TV
CBO
= 1500V
FJPF6806D
1
TO-220F
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
50
Ω
typ.
E
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 12 A
I
CP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 750 V
Emitter-Base Voltage 6 V
Collector Current (DC) 6 A
Collector Dissipation 40 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=4A, IB=1A 5 V
V
CE
(sat) Base-E mitter Saturat ion Voltage IC=4A, IB=1A 1.5 V
V
BE
V
F
* Storage Time VCC=200V, IC=4A, RL=50
t
STG
* Fall Time 0.2 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1400V, RBE=0 1 mA
Collector Cut-off Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current VEB=4V, IC=0 40 200 mA
Base-Emitter Breakdown Voltage IE=300mA, IC=0 6 V
DC Current Gain VCE=5V, IC=1A
=5V, IC=4A
V
CE
8
47
Damper Diode Turn On Voltage IF = 4.5A 2 V
Ω
3 µs
IB1=1.0A, IB2= - 2.0A
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
Thermal Resistance, Junction to Case 3.1 °C/W
Page 2
Typical Characteristics
FJPF6806D
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0246810
IB = 2.0A
IB = 0.8A
VCE [V], COLLECTOR-EMITTER VOL TAGE
IB = 0.6A
IB = 0.4A
IB = 0.2A
100
Ta = 125oC
10
Ta = 25oC
, DC CURRENT GAIN
FE
H
Ta = - 25oC
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
IC = 5 I
B
1
Ta = 125oC
Ta = 25oC
Ta = - 25oC
0.1
10
IC = 3 I
B
1
0.1
VCE = 5V
Ta = 125oC
Ta = 25oC
Ta = - 25oC
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
IC [A], COLLECTOR CURRENT
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
10
VCE = 5 V
8
6
4
2
[A], COLLECTOR CURRENT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta = 25 oC
Ta = 125 oC
VBE [V], BASE-EMITTER ON VOLTAGE
Ta = - 25 oC
s], SWITCHING TIME
µ
[
& t
t
1
F
STG
VCC = 200V,
= 4A, IB1 = 1A
I
C
0.1
1
IB2 [A], REVERSE BASE CURRENT
t
STG
t
F
Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Page 3
FJPF6806D
Typical Characteristics
10
VCC = 200V,
= 4A, IB2 = - 2A
I
C
1
s], SWITCHING TIME
µ
[
F
& t
STG
t
0.1
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time
15
12
9
6
3
[A], COLLECTOR CURRENT
C
I
1
10 100 1000 10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
t
STG
t
1
F
RB2 = 0, IB1 = 15A
= 30V, L = 200µH
V
CC
VBE(off) = -3V
(Continued)
t
STG
1
t
s], SWITCHING TIME
µ
[
F
& t
STG
t
VCC = 200V,
I
= 1A,IB2 = - 2A
B1
0.1
1 10
F
IC [A], COLLECTOR CURRENT
100
IC (Pulse)
10
IC (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
TC = 25oC
Single Pulse
0.01
1 10 100 1000 10000
t = 100ms
t = 10ms
t = 1ms
VCE [V], COLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
D
P
10
0
0 25 50 75 100 125 150 175 200
TC [oC], CASE TEMPERATURE
Figure 11. Power Dera ting
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Page 4
Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
FJPF6806D
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, July 2002
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
I
C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
VCX™
SPM™
Stealth™
SuperSOT™-3
®
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
®
UltraFET
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. H7
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...