Page 1
FJPF5321
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
FJPF5321
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width = 5ms, Duty Cycle≤10%
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 10 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V
V
BE
f
T
C
ob
C
ib
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 - - V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V
Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain bandwidth Product VCE= 10V, IC = 0.6A - 14 - MHz
Output Capacitance V
Input Capacitance V
Turn On Time V
Storage Time - 6.5 µs
Fall Time - - 0.3 µs
Turn On Time V
Storage Time - - 3.0 µs
Fall Time - - 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 800V, IE = 0 - - 100 µA
CB
= 7V , IC = 0 - - 10 µA
EB
= 5V, IC = 0.6A
CE
= 5V, IC = 3A
V
CE
= 10V, IE = 0, f = 1 M H z - 65 100 pF
CB
= 7V , IC = 0 , f = 1 M H z - 1400 2000 pF
EB
= 125V, IC = 1A
CC
I
= -IB2 = 0.2A
B1
= 125Ω
R
L
= 250V, IC = 4A
CC
I
= 0.8A, IB2 = -1.6A
B1
= 62.5Ω
R
L
15
8
-
40
-
-
-- 0.5µs
-- 0.5µs
©2003 Fairchild Semiconductor Corporation Rev. A, December 2003
Page 2
FJPF5321
Thermal Characteristics T
Symbol Characteristics Rating Unit
R
θjc
R
θja
Thermal Resistance Junction to Case 3.1 °C/W
=25°C unless otherwise noted
C
Junction to Ambient 62.5
©2003 Fairchild Semiconductor Corporation Rev. A, December 2003
Page 3
Typical Characteristics
FJPF5321
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
012345678910
IB = 350mA
IB = 150mA
IB = 100mA
IB = 50mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
100
VCE = 5 V
TC = 125oC
TC = - 25oC
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
TC = 75oC
TC = 25oC
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
IC = 5 I
B
TC = 125oC
1
0.1
TC = 75oC
TC = - 25oC
TC = 25oC
10
1
IC = 5 I
TC = - 25oC
TC = 125oC
B
TC = 25oC
TC = 75oC
(sat) [V], SAT URATION V O L T AG E
CE
V
0.01
0.1 1 10
IC [A], COLLECTOR CURRENT
(sat) [V], SAT URATION V O L T AG E
BE
V
0.1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 3. Saturation Voltage Figure 4. Saturation Voltage
10ms
50µs
1ms
100µs
10
[A], COLLECTOR CURRENT
C
I
IB1=3A, RB2=0
L=1mH, VCC=20V
1
10 100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
100
IC MAX (Pulse)
10
IC MAX (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Page 4
FJPF5321
Typical Characteristics
10
1
s], SWITCHING TIME
0.1
µ
µµ
µ
[
STG
, t
F
t
IB1=0.2A, IB2=-0.2A
V
=125V
CC
0.01
0.1 1 10
Figure 7. Resistive Loa d Switching Time Figure 8. Power Derating
IC [A], COLLECTOR CURRE NT
(Continued)
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Page 5
Package Dimensions
±0.10
3.30
±0.20
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
FJPF5321
±0.20
±0.20
15.87
15.80
±0.30
9.75
[2.54
MAX1.47
0.80
±0.10
0.35
±0.10
2.54TYP
±0.20
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
Rev. A, December 2003©2003 Fairchild Semiconductor Corporation
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
ImpliedDisconnect™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
®
UltraFET
VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I6
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...