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FJPF5200
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A.
• High Power Dissipation : 50watts.
• High Frequency : 30MHz.
• High Voltage : V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to FJPF1943
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SC5200/FJL4315 : 150 watts
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
CEO
=250V
January 2009
1
1.Base 2.Collector 3.Emitter
TO-220F
FJPF5200 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Ratings Units
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
TJ, T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
Collector-Base Voltage 250 V
Collector-Emitter Voltage 250 V
Emitter-Base Voltage 5 V
Collector Current(DC) 17 A
Base Current 1.5 A
Total Device Dissipation(TC=25°C)
Derate above 25°C
Junction and Storage Temperature - 50 ~ +150 °C
=25°C unless otherwise noted
a
50
0.4
Symbol Parameter Max. Units
R
θJC
* Device mounted on minimum pad size
Thermal Resistance, Junction to Case 2.5 °C/W
hFE Classification
Classification R O
W
W/°C
h
FE1
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJPF5200 Rev. C 1
55 ~ 110 80 ~ 160
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FJPF5200 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V
f
T
C
ob
* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V
Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 250 V
Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
Collector Cut-off Current VCB=230V, IE=0 5.0 µA
Emitter Cut-off Current VEB=5V, IC=0 5.0 µA
DC Current Gain VCE=5V, IC=1A 55 160
DC Current Gain VCE=5V, IC=7A 35 60
Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Output Capacitance VCB=10V, f=1MHz 200 pF
Ordering Information
Part Number Marking Package Packing Method Remarks
FJPF5200RTU J5200R TO-220F TUBE hFE1 R grade
FJPF5200OTU J5200O TO-220F TUBE hFE1 O grade
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJPF5200 Rev. C 2
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Typical Characteristics
FJPF5200 — NPN Epitaxial Silicon Transistor
16
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0 2 4 6 8 10 12 14 16 18 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )
o
o
C
C
Tj=25
o
Tj=-25
C
110
Ic[A ], C OLL ECT OR CURRENT
100
10
, DC CURRENT GAIN
FE
h
1
Tj=125
IB=200mA
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
IB = 0
Vce=5V
o
Tj=125
100
10
, DC CURRENT GAIN
FE
h
1
o
C
C
Tj=25
o
Tj=-25
C
110
Vce=5V
Ic[A ], C OLL ECT OR CURRENT
10000
Ic=10 Ib
1000
o
Tj=25
C
o
Tj=125
100
10
Vce(sat)[mV], SATURATION VOLTAGE
C
o
C
Tj=-25
1
0.1 1 10
Ic[A], COL L ECT OR CURRE NT
Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage
10000
o
o
Tj=25
C
C
Tj=-25
1000
o
C
Tj=125
100
Vbe(sat)[mV], SATURATION VOLTAGE
0.1 1 10
Ic[A], COLLECTOR CURRENT
Ic=10Ib
12
10
8
6
4
[A], COLLECTOR CURRENT
2
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJPF5200 Rev. C 3
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Typical Characteristics
FJPF5200 — NPN Epitaxial Silicon Transistor
3.0
C / W]
o
2.5
[
thja
2.0
1.5
1.0
0.5
1E-6 1E-5 1E-4 1 E-3 0.01 0.1 1 10 100
Transient Thermal Resistance, R
Pulse duration [sec]
Figure 7. Thermal Resistance Figure 8. Power Derating
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJPF5200 Rev. C 4
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FJPF5200 NPN Epitaxial Silicon TransistorFJPF5200
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJPF5200 Rev. C 5
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