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FJPF13007
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capabilit y
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
TO-220F
Absolute Maximum Ratings
1
1.Base 2.Collector 3.Emitter
TC = 25°C unless otherwise noted
Symbol Parameter Value Units
V
V
V
I
I
I
P
T
T
CBO
CEO
EBO
C
CP
B
C
J
STG
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current (DC) 8 A
Collector Current (Pulse) 16 A
Base Current 4 A
Collector Dissipation (TC = 25°C) 40 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
©2005 Fairchild Semiconductor Corporation
FJPF13007 Rev. C
1
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FJPF13007 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max Units
BV
CEO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
ON
t
STG
t
F
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 400 V
Emitter Cut-off Current VEB = 9V, IC = 0 1 µA
DC Current Gain VCE = 5V, IC = 2A
= 5V, IC = 5A
V
CE
Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A
= 5A, IB = 1A
I
C
= 8A, IB = 2A
I
C
Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A
= 5A, IB = 1A
I
C
8
5
60
30
1.0
2.0
3.0
1.2
1.6
Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
Output Capacitance VCB = 10V, f = 0.1MHz 110 pF
Turn On Time VCC = 125V, IC = 5A
I
= -I
= 25Ω
L
B2
= 1A
Storge Time 3.0 µs
B1
R
Fall Time 0.7 µs
1.6 µs
hFE Classification
Classification H1 H2
h
FE1
15 ~ 28 26 ~ 39
V
V
V
V
V
FJPF13007 Rev. C
2
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Page 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Saturation Voltage
100
VCE = 5V
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
10
IC = 3 I
B
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
1000
100
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
1000
100
[ns], TURN ON TIME
D
, t
R
t
VCC=125V
=5I
I
C
B
10
0.1 1 10
IC[A], COLLECTOR CURRENT
t
R
tD, VBE(off)=5V
10000
1000
[ns], TURN OFF TIME
F
100
, t
STG
t
10
FJPF13007 Rev. C
Figure 5. Turn Off Time Figure 6. Forward Biased Safe Operating Area
VCC=125V
I
=5I
C
t
STG
t
F
0.1 1 10
B
IC[A], COLLECTOR CURRENT
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
3
10
µ
100
s
µ
s
D
C
1ms
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FJPF13007 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000 10000
Vcc=50V,
I
=1A, IB2 = -1A
B1
L = 1mH
VCE[V], COLLECTOR-EMITTER VOLTAGE
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
FJPF13007 Rev. C
4
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Page 5
Mechanical Dimensions
±0.10
3.30
±0.20
15.80
MAX1.47
±0.30
0.80
9.75
±0.10
10.16
(7.00)
TO-220F
±0.20
(30°)
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
±0.20
±0.20
15.87
0.35
2.54TYP
[2.54
±0.10
±0.20
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
FJPF13007 Rev. C
Dimensions in Millimeters
5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FJPF13007 High Voltage Fast-Switching NPN Power Transistor
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
6
FJPF13007 Rev. C
Rev. I15
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