Datasheet fjp5555 Datasheet

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Page 1

FJP5555 NPN Silicon Transistor

Features

• High Voltage Switch Mode Application

• Fast Speed Switching

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

January 2010

1.Base 2.Collector 3.Emitter

TO-220

FJP5555 — NPN Silicon Transistor

Absolute Maximum Ratings T

=25°C unless otherwise noted

Symbol Parameter Value Units

CBO

CEO

EBO

STG

Electrical Characteristics T

Collector-Base Voltage 1050 V Collector-Emitter V oltage 400 V Emitter-Base Voltage 14 V Collector Current (DC) 5 A

Collector Current (Pulse) 10 A Collector Dissipation 75 W

Junction Temperature 150 °C

Storage Temperature - 55 to +150 °C

=25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

CBO

CEO

EBO

(sat) Base-Emitter Saturation Voltage IC=3.5A, IB=1.0A 1.2 V

STG

EAS Avalanche Energy L= 2mH

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

Collector-Base Voltage IC=500μA, IE=0 1050 V Collector-Emitter Voltage IC=5mA, IB=0 400 V Emitter-Base Voltage IE=500μA, IC=0 14 V *DC Current Gain VCE=5V, IC=10mA

=3V, IC=0.8A

10 20 40

(sat) Collector-Emitter Saturation Voltag e IC=1A, IB=0.2A

=3.5A, IB=1.0A

Output Capacitance VCB=10V, f=1MHz 45 pF

Turn On Time Storage Time 1.2 μs Fall Time 0.3 μs

Turn On Time Storage Time 2.5 μs Fall Time 0.3 μs

=125V, IC=0.5A

=45mA, IB2=0.5A

=250Ω

=250V, IC=2.5A

=0.5A, IB2=1.0A

=100Ω

0.5

1.5

1.0 μs

2.0 μs

V V

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Typical Characteristics

FJP5555 — NPN Silicon Transistor

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

[A], COLLECTOR CURRENT

0.5

0.0 0123456789

IB = 600mA

IB = 200mA

IB = 100mA

VCE [V], COLLECTOR-EMITTER VOLTAGE

100

, DC CURRENT GAIN

1 1E-3 0.01 0.1 1 10

Ta = 125oC

Ta = - 25oC

Ta = 75oC

Ta = 25oC

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics Figure 2. DC Current Gain

IC = 5 I

0.1

Ta = 125oC

Ta = 75oC

Ta = - 25oC

Ta = 25oC

0.1

IC = 5 I

Ta = - 25oC

Ta = 125oC

Ta = 25oC

Ta = 75oC

VCE = 5V

(sat) [V], SATURATION VOLTAGE

0.01

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

(sat) [V], SATURATION VOLTAGE

0.01

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

Figure 3. Saturation Voltage Figure 4. Saturation Voltage

0.1

[us], SWITCHING TIME

& t

STG

VCC=125V

=45mA, IB2=0.5A

0.01

0.1 1

IC [A], COLLECTOR CURRENT

STG

0.1

[us], SWITCHING TIME

& t

STG

VCC=250V

=0.5A, IB2=1.0A

0.01

0.1 1 10

IC [A], COLLECTOR CURRENT

STG

Figure 5. Resistive Load Switching Figure 6. Resistive Load Switching

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Typical Characteristics (Continued)

FJP5555 — NPN Silicon Transistor

[A], COLLECTOR CURRENT

VCC=50V, L=1mH

=3A, RB2=0

10 100 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

100

[W], POWE R DISSIPATION

0 25 50 75 100 125 150 175

Tc[oC], CASE TEMPERATURE

Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating

100ms

10ms

100

ICP(max)

IC(max)

0.1

[A], COLLECTOR CURRENT

Tc=25oC Single Pulse

0.01 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Forward Biased Safe Operating Area

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Physical Dimensions

FJP5555 — NPN Silicon Transistor

TO-220

Dimensions in Millimeters

Page 5

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥

CROSSVOLT¥

CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST

FPS¥ F-PFS¥

FRFET Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

FastvCore¥ FETBench¥ FlashWriter

PDP SPM™ Power-SPM¥

PowerTrench PowerXS™

Programmable Active Droop¥ QFET QS¥ Quiet Series¥ RapidConfigure¥

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6

SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™

The Power Franchise

TinyBoost¥

TinyBuck¥ TinyCalc¥

TinyLogic

™

TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥

TriFault Detect¥ TRUECURRENT¥* PSerDes¥

UHC Ultra FRFET¥ UniFET¥ VCX¥

VisualMax¥ XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I41