Datasheet fjp5554 Datasheet

FJP5554

High Voltage Fast Switching Transistor

Features

• Fast Speed Switching

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

FJP5554 — High Voltage Fast Switching Transistor

October 2008

1

1.Base 2.Collector 3.Emitter

TO-220

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

J

T

STG

* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed

Collector-Base Voltage 1050 V

Collector-Emitter Voltage 400 V

Emitter-Base Voltage 15 V

Collector Current (DC) 4 A

* Collector Current (Pulse) 8 A

Collector Dissipation (TC = 25°C) 70 W

Junction Temperature 150 °C

Storage Temperature -55 ~ 150 °C

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

J5554 FJP5554TU TO-220 - - 50

J5554 FJP5554 TO-220 - - 200

FJP5554 Rev. 1.0.0 1

FJP5554 — High Voltage Fast Switching Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

BV

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

t

ON

t

STG

t

F

CBO

CEO

EBO

Collector-Base Breakdown Voltage IC = 500mA, IE = 0 1050 V

Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V

Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 15 23 V

Collector Cut-off Current VCB = 1050V, IE = 0 1 mA

Collector Cut-off Current VCB = 400V, IB = 0 250 mA

Emitter Cut-off Current VEB = 15V, IC = 0 1 mA

DC Current Gain VCE = 5V, IC = 0.1A

VCE = 3V, IC = 0.8A

45 20

100

50

Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.5 V

IC = 3.5A, IB = 1.0A 1.5 V

Base-Emitter Saturation Voltage IC = 3.5A, IB = 1.0A 1.5 V

Turn On Time

Storage Time 1.2 ms

Fall Time 0.3 ms

VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250W

1.0 ms

FJP5554 Rev. 1.0.0 2

Typical Performance Characteristics

Figure 1. Static Characterstic Figure 2. DC Current Gain

FJP5554 — High Voltage Fast Switching Transistor

4.0

3.5

3.0

2.5

2.0

1.5

1.0

[A], COLLECTOR CURRENT

C

I

0.5

0.0 0 1 2 3 4 5 6 7 8 9 10

IB=350mA

IB=150mA

IB=100mA

IB=50mA

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage

TC= 125oC

100

TC= - 25oC

10

hFE, DC CURRENT GAIN

1

0.01 0.1 1 10

TC= 75oC

TC= 25oC

IC [A], COLLECTOR CURRENT

VCE=5V

TC= - 25oC

TC= 75oC

TC= 25oC

TC= 125oC

100

10

hFE, DC CURRENT GAIN

1

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

10

IC=3.5 I

B

TC= 75oC

1

0.1

(SAT) [V], SATURATION VOLTAGE

CE

V

0.01

0.1 1 10

TC= 125oC

TC= - 25oC

IC [A], COLLECTOR CURRENT

VCE=3V

TC= 25oC

Figure 5. Base-Emitter Saturation Voltage Figure 6. Output Capacitance

10

TC= 125oC

TC= 25oC

TC= 75oC

1

TC= - 25oC

(sat) [V], SATURATION VOLTAGE

BE

V

0.1

0.1 1 10

IC=3.5 I

B

IC [A], COLLECTOR CURRENT

FJP5554 Rev. 1.0.0 3

1000

f = 1MHz, IE=0

100

[pF], OUTPUT CAPACITANCE

OB

C

10

0.1 1 10 100

VCB [V], COLLECTOR-BASE VOLTAGE

Typical Performance Characteristics (Continued)

Figure 7. Reverse Biased Safe Operating Area Figure 8. Forward Biased Safe Operating Area

FJP5554 — High Voltage Fast Switching Transistor

10

9

8

7

6

5

4

VBE(off)=-5V

RBE(off)=1 ohm

3

[A], COLLECTOR CURRENT

C

I

VCC=50V, IB1=1.2A

2

L=1mH

1

0 200 400 600 800 1000 1200

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Power Derating Curve

100

80

60

40

100

Single Pulse TC=25oC

Pulse

10

1

0.1

[A], COLLECTOR-CURRENT

C

I

0.01 10

DC

100ms

10ms

100

1ms

1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

20

[W], COLLECTOR POWER DISSIPATION

C

P

0

0 25 50 75 100 125 150

TC [oC], CASE TEMPERATURE

FJP5554 Rev. 1.0.0 4

Package Dimension

FJP5554 — High Voltage Fast Switching Transistor

Dimensions in Millimeters

FJP5554 Rev. 1.0.0 5

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FJP5554 High Voltage Fast Switching TransistorFJP5554

DISCLAIMER

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I31

FJP5554 Rev. A1 6