Page 1
FJP5355
High Voltage Switch Mode Application
• High Speed Switching
• Very Low Switching Losses
• Very Low Operating Temperature
•Wide RBSOA
FJP5355
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
C
ICP
IB
P
T
T
CBO
CEO
EBO
C
J
STG
Collector-Base Voltage 900 V
Collector-Emitter Voltage 440 V
Emitter- Base Voltage 14.5 V
Collector Current (DC) 5 A
Collector Current (Pulse) 7.5 A
Base Current 2.5 A
Collector Dissipation (TC=25°C) 50 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Voltage IC = 0.8A, IB = 0.2A
V
CE
(sat) *Base-Emitter Saturation Voltage IC = 0.8A, IB = 0.2A
V
BE
f
T
t
ON
t
STG
t
F
* Pulse test: PW≤300µs, Duty cycle≤2%
Collector- Base Breakdown Voltage IC = 500µA, IE = 0 900 V
Collector- Emitter Breakdown Voltage IC = 5mA, IB = 0 440 V
Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 14.5 V
Emitter Cut-off Current V
*DC Current Gain
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 1.2 µs
Fall Time 0.4 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 12V, IC = 0 1 µA
EB
V
= 2V, IC = 10mA
CE
V
= 2V, IC = 0.8A
CE
= 2V, IC = 2.5A
V
CE
= 2.5A, IB = 0.8A
I
C
I
= 2.5A, IB = 0.8A
C
= 10V, IC = 0.2A 4 MHz
CE
= 125V, IC = 0.5A
CC
= 45mA, -IB2 = 0.5A
I
B1
PW=300µs
15
15
7
0.2
0.4
1.0
1.2
1.1 µs
V
V
V
V
©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
Page 2
Typical Characteristics
FJP5355
5
1000
VCE = 5V
4
3
IB=600mA
100
TC = 125oC
TC = 75oC
IB=300mA
2
IB=200mA
IB=100mA
1
[A], COLLECTOR CURRENT
C
I
0
012345
VCE [V], COLLECTOR-EMITTER VOLTAGE
TC = - 40oC
10
, DC CURREMT GAIN
FE
h
1
1m 10m 100m 1 10
TC = 25oC
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC Current Gain
10
IC = 4 I
B
1
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
1m 10m 100m 1 10
TC = 75oC
TC = 125oC
TC = - 40oC
IC [A], COLLECTOR CURRENT
TC = 25oC
10
IC = 4 I
B
1
TC = - 40oC
(sat) [V], SATURATION VOLTAGE
BE
V
0.1
1m 10m 100m 1 10
TC = 25oC
TC = 125oC
IC [A], COLLECTOR CURRENT
TC = 75oC
Figure 3. Saturation Voltage Figure 4. Saturation Voltage
1000
100
[ns], Switching Time
F
& t
STG
t
IB1=45mA, IB2=-500mA
=125V,PW=3 00u s
V
CC
10
0.3
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Loa d Switching Figure 6. Power Derat ing Curve
©2003 Fairchild Semiconductor Corporation
60
t
STG
t
F
1
4
50
40
30
20
10
[W], COLLECTOR POWER DISSIPATION
C
0
P
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, September 2003
Page 3
Typical Characteristics
(Continued)
FJP5355
10ms
1ms
500µs
6
5
4
3
2
[A], COLLECTOR CURRENT
C
IB1=1A, RB2=0
I
1
10 100 1000
L=1mH, V
CC
=50V
VCE [V], COLLECTOR-EMITTER VOLTAGE
100
ICP(max)
10
DC
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTO R -EMITT ER VOLTAGE
Figure 7. Reverse Biased Safe Operating Area Figure 8. Forward Biased Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
Page 4
Package Dimensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
18.95MAX.
15.90
4.50
1.30
±0.20
+0.10
–0.05
FJP5355
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
Page 5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Pro d uct Statu s Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation Rev. I5
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