Datasheet fjp5304d Datasheet

FJP5304D NPN Silicon Transistor

High Voltage High Speed Power Switch Application

• Wide Safe Operating Area

• Built-in Free Wheeling diodeSuitable for Electronic Ballast Application

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

Equivalent Circuit

C

B

1

E

1.Base 2.Collector 3.Emitter

TO-220

FJP5304D — NPN Silicon Transistor

July 2008

Absolute Maximum Ratings T

=25°C unless otherwise noted

C

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

STG

* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%

Electrical Characteristics T

Collector-Base Voltage 700 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 12 V Collector Current (DC) 4 A * Collector Current (Pulse) 8 A Base Current (DC) 2 A * Base Current (Pulse) 4 A Collector Dissipation (TC=25°C) 70 W Storage Temperature - 65 ~ 150 °C

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV BV BV I

CES

I

CEO

I

EBO

CBO

CEO

EBO

Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V Collector Cut-off Current VCE = 700V, VEB = 0 100 mA Collector Cut-off Current VCE = 400V, IB = 0 250 mA Emitter Cut-off Current VEB = 12V, IC = 0 100 mA

FJP5304D — NPN Silicon Transistor

h

FE

DC Current Gain VCE = 5V, IC = 10mA

VCE = 5V, IC = 2A

10

8 40

VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A

IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A

VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A

IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A

V

f

Internal Diode Forward Voltage Drop IF = 2A 2.5 V

Inductive Load Switching (VCC = 200V)

t

stg

tf Fall Time 0.1

Storage Time IC = 2A, IB1 = 0.4A

VBE(off) = -5V, L = 200μH

0.6 μs

Resistive Load Switching (VCC = 250V)

t

stg

tf Fall Time 0.2

* Pulse test: PW≤300μs, Duty cycle≤2%

Storage Time IC = 2A, IB1 = IB2 = 0.4A

TP = 30μs

Thermal Characteristics

Symbol Parameter Max. Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.78 °C/W Thermal Resistance, Junction to Ambient 62.5 °C/W

0.7

1.0

1.5

1.1

1.2

1.3

2.9 μs

V

Typical Characteristics

FJP5304D — NPN Silicon Transistor

5

4

3

2

IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA

IB = 150mA IB = 100mA

IB = 50mA

[A], COLLECTOR CURRENT

1

C

I

0

012345678910

IB = 0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC Current Gain

10

1

0.1

(sat)[V],SATURATION VOLTAGE

CE

V

0.01

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

Ta=125OC

O

C

-25

Ic=5I

25

100

Vce=5V

Ta=125oC

o

25

C

o

-25

C

10

,DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

B

O

C

10

1

O

C

-25 25OC

Ta=125

[V],SATURATION VOLTAGE

BE

V

0.1

0.01 0.1 1 10

Ic=5I

B

O

C

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage

10

1

[μs], TIME

F

, t

STG

0.1

t

0.01

0.1 1 10

VCC = 250V I

C

t

STG

t

F

IC[A], COLLECTOR CURRENT

= 5IB1 = -5I

1000

B2

100

[ns], TIME

F

, t

STG

t

V

= 200V,

Clamp

=-5V, RBB=0 Ohm,

V

BE(OFF)

L=200 uH, I

10

0.1 1 10

= 5I

C

IC[A], COLLECTOR CURRENT

t

STG

t

F

B1

Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time

Typical Characteristics (Continued)

FJP5304D — NPN Silicon Transistor

100

10

TC=25 oC

1μs

10μs

1

1ms

0.1

[A], COLLECTOR CURRENT

C

I

0.01 10 100 1000

DC

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Forward Bias Safe Operating Area

100

80

60

40

100

10

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01 10 100 1000 10000

Vcc=50V,

=1A, IB2 = -1A

I

B1

L = 1mH

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 2. Reverse Bias Safe Operating Area

20

[W], POWER DISSIPATION

C

P

0

0 25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

Figure 3. Power Derating

Mechanical Dimensions

FJP5304D — NPN Silicon Transistor

TO220

FJP5304D NPN Silicon TransistorFJP5304D