Datasheet fjp3307d Datasheet

FJP3307D

High Voltage Fast Switching NPN Power Transistor

Features

• Built-in Diode between Collector and Emitter

• Suitable for Electronic Ballast and Switch Mode Power Supplies

Internal Schematic Diagram

C

B

FJP3307D — High Voltage Fast Switching NPN Power Transistor

July 2008

1

1.Base 2.Collector 3.Emitter

TO-220

E

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed

Electrical Characteristics T

Symbol Parameter Conditions Min. Typ. Max Units

BV

CBO

BV

CEO

BV

EBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

Collector-Base Voltage 700 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 9 V Collector Current (DC) 8 A * Collector Current (Pulse) 16 A Base Current (DC) 4 A Collector Dissipation (TC = 25°C) 80 W Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C

= 25°C unless otherwise noted

C

Collector-Base Breakdown Voltage IC = 500μA, IE = 0 700 V Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 9 V Emitter Cut-off Current VEB = 9V, IC = 0 1 mA DC Current Gain VCE = 5V, IC = 2A

VCE = 5V, IC = 5A

8 5

40 30

Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1 V

IC = 5A, IB = 1A 2 V IC = 8A, IB = 2A 3 V

Symbol Parameter Conditions Min. Typ. Max Units

V

BE(sat)

V

F

C

ob

t

STG

t

F

t

STG

t

F

* Pulse test: PW = 300μs, Duty cycl e= 2%

Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1.2 V

IC = 5A, IB = 1A 1.6 V Diode Forward Voltage IC = 3A 2.5 V Output Capatitance VCB = 10V, IE = 0, f = 1MHz 60 pF Storage Time Fall Time 0.7 μs Storage Time V Fall Time 150 ns

V

= 125V, IC = 5A

CC

IB1 = -IB2 = 1A, RL = 50Ω

= 30V, IC = 5A, L=200μH

CC

IB1=1A, RBB = 0Ω, V

V

= 250V

CLAMP

BE(OFF)

= -5V

3 μs

2.3 μs

hFE Classification

Classification H1 H2

FJP3307D — High Voltage Fast Switching NPN Power Transistor

h

FE1

15 ~ 28 26 ~ 39

Typical Characteristics

Figure 1. Static Characterstic Figure 2. DC Current Gain (H1 Grade)

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

[A], COLLECTOR CURRENT

C

I

0.5

0.0 012345678910

IB=300mA

IB=100mA

IB=50mA

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 3. DC Current Gain (H2 Grade) Figure 4. Collector-Emitter Saturation Voltage

100

TC = 125 oC

TC = 75 oC

VCE = 5V

100

TC = 125 oC

TC = - 25 oC

10

, DC CURRENT GAIN

FE

h

1

0.1 1 10

TC = 75 oC

TC = 25 oC

IC [A], COLLECTOR CURRENT

10

IC = 5 I

B

TC = 125 oC

VCE = 5V

FJP3307D — High Voltage Fast Switching NPN Power Transistor

TC = - 25 oC

10

, DC CURRENT GAIN

FE

h

1

0.1 1 10

TC = 25 oC

IC [A], COLLECTOR CURRENT

1

0.1

(sat),[V] SATURATION VOLTAGE

CE

V

0.01

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

Figure 5. Base-Emitter Saturation Voltage Figure 6. Output Capacitance

10

IC = 5 I

B

1

TC = - 25 oC

TC = 125 oC

(sat)[V], SATURATION VOLTAGE

BE

V

0.1

0.01 0.1 1 10

TC = 25 oC

TC = 75 oC

IC [A], COLLECTOR CURRENT

1000

f = 1MHz, IE = 0

100

[pF], OUTPUT CAPACITANCE

OB

C

10

1 10 100

VCB [V], COL LECTOR-BASE VOLTA GE

TC = 75 oC

TC = 25 oC

TC = - 25 oC

Typical Characteristics (Continued)

Figure 7. Power Derating Figure 8. Reverse Biased Safe Operating Area

100

80

FJP3307D — High Voltage Fast Switching NPN Power Transistor

100

60

40

20

[W}, COLLECTOR POWER DISSIPATION

C

P

0

0 25 50 75 100 125 150 175 200

TC [oC], CASE TEMPERATURE

Figure 9. Forward Biased Safe Operating Area

100

IC(MAX), Pu ls e

[A], COLLECTOR CURREMT

C

I

10

IC(MAX), DC

1

0.1

TC = 25 oC

1ms

Single Pulse

0.01 1 10 100 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

10μs

100μs

10

1

[A], COLLECTOR CURRENT

C

I

VCC = 50V, IB1 = - IB2 = 1A L = 1mH

0.1 10 100 1000

VCE [V], COLL E CTOR-EM IT T ER VOLTAGE

Mechanical Dimensions

FJP3307D — High Voltage Fast Switching NPN Power Transistor

TO220

FJP3307D High Voltage Fast Switching NPN Power TransistorFJP3307D