Datasheet fjp3305 Datasheet

FJP3305

High Voltage Fast-Switching NPN Power Transistor

• High Voltage Capability

• High Switching Speed

• Suitable for Electronic Ballast and Switching Regulator

FJP3305 — High Voltage Fast-Switching NPN Power Transistor

October 2008

TO-220

Absolute Maximum Ratings T

1

1.Base 2.Collector 3.Emitter

= 25°C unless otherwise noted

C

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage 700 V

Collector-Emitter Voltage 400 V

Emitter-Base Voltage 9 V

Collector Current (DC) 4 A

Collector Current (Pulse) 8 A

Base Current 2 A

Collector Dissipation (TC = 25°C) 75 W

Junction Temperature 150 °C

Storage Temperature -65 ~ 150 °C

FJP3305 Rev. 1.0.0 1

FJP3305 — High Voltage Fast-Switching NPN Power Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

ON

t

STG

t

F

* Pulse Test: PW £ 300ms, Duty Cycle £ 2%

Collector-Base Breakdwon Voltage IC = 500mA, IE = 0 700 V

Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V

Emitter-Base Breakdown Voltage IE = 500mA, IC = 0 9 V

Collector Cut-off Current VCB = 700V, IE = 0 1 mA

Emitter Cut-off Current VEB = 9V, IC = 0 1 mA

DC Current Gain * VCE = 5V, IC = 1A

VCE = 5V, IC = 2A

Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A

IC = 2A, IB = 0.5A IC = 4A, IB = 1A

Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A

IC = 2A, IB = 0.5A

19

35

8

40

0.5

0.6

1.0

1.2

1.6

Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz

Output Capacitance VCB = 10V, f = 1MHz 65 pF

Turn On Time VCC = 125V, IC = 2A

Storge Time 4.0 ms

Fall Time 0.9 ms

IB1 = -IB2 = 0.4A RL = 62.5W

0.8 ms

hFE Classification

V V V

V V

Classification H1 H2

h

FE1

19 ~ 28 26 ~ 35

FJP3305 Rev. 1.0.0 2

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade)

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

[A], COLLECTOR CURRENT

C

I

0.5

0.0

0 1 2 3 4 5 6 7 8 9 10

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 3. DC Current Gain (O-Grade) Figure 4. Saturation Voltage (R-Grade)

IB = 300mA

IB = 100mA

IB = 50mA

100

VCE = 5V

Ta = 125 OC

Ta = - 25 OC

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

Ta = 75 OC

Ta = 25 OC

IC [A], COLLECTOR CUTRRENT

FJP3305 — High Voltage Fast-Switching NPN Power Transistor

100

VCE = 5V

Ta = 125 OC

Ta = - 25 OC

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

Ta = 75 OC

Ta = 25 OC

IC [A], COLLECTOR CUTRRENT

10

IC = 4 I

B

Ta = 125 OC

1

Ta = 75 OC

0.1

(sat) [V], SATURATION VOLTAGE

CE

V

0.01

0.01 0.1 1 10

Ta = - 25 OC

Ta = 25 OC

IC [A], COLLECTOR CURRENT

Figure 5. Saturatin Voltage (O-Grade) Figure 6. Saturation Voltage (R-Grade)

10

IC = 4 I

B

Ta = 125 OC

1

Ta = 75 OC

0.1

(sat) [V], SATURATION VOLTAGE

CE

V

0.01

0.01 0.1 1 10

Ta = - 25 OC

Ta = 25 OC

IC [A], COLLECTOR CURRENT

10

IC = 4 I

B

Ta = 125 OC

Ta = 25 OC

Ta = 75 OC

1

Ta = - 25 OC

0.1

(sat) [V], SATURATION VOLTAGE

BE

V

0.01

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

FJP3305 Rev. 1.0.0 3

Typical Performance Characteristics (Continued)

Figure 7. Saturation Voltage (O-Grade) Figure 8. Switching Time

10

1

Ta = - 25 OC

IC = 4 I

B

Ta = 25 OC

10

1

FJP3305 — High Voltage Fast-Switching NPN Power Transistor

t

STG

Ta = 125 OC

0.1

(sat) [V], SATURATION VOLTAGE

CE

V

0.01

0.01 0.1 1 10

Ta = 75 OC

IC [A], COLLECTOR CURRENT

t

F

0.1

[ms], SWITCHING TIME

STG

& t

F

t

IB1 = - IB2 = 0.4A VCC = 125V

0.01

0.1 1 10

IC [A], COLLECTOR CURRENT

Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area

10

[A], COLLECTOR CURRENT

IB1=2A, RB2=0

C

I

VCC=50V, L=1mH

1

10 100 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

100

IC (Pulse)

10

IC (DC)

1

0.1

[A], COLLECTOR CURRENT

C

I

TC = 25OC Single Pulse

0.01 1 10 100 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

5ms

1ms

500ms

Figure 11. Power Derating

100

90

80

70

60

50

40

30

[W], POWER DISSIPATION

20

C

P

10

0

0 25 50 75 100 125 150 175

Tc[oC], CASE TEMPERATURE

FJP3305 Rev. 1.0.0 4

Package Dimension

FJP3305 — High Voltage Fast-Switching NPN Power Transistor

Dimensions in Millimeters

FJP3305 Rev. 1.0.0 5

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

®

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FJP3305 High Voltage Fast-Switching NPN Power TransistorFJP3305

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I31

FJP3305 Rev. A1 6