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FJP13007
High Voltage Fast-Switching NPN Power Transistor
High Voltage High Speed Power Switch Application
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
July 2008
TO-220
Absolute Maximum Ratings T
1
1.Base 2.Collector 3.Emitter
= 25°C unless otherwise noted
C
Symbol Parameter Value Units
V
V
V
I
I
I
P
T
T
CBO
CEO
EBO
C
CP
B
C
J
STG
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current (DC) 8 A
Collector Current (Pulse) 16 A
Base Current 4 A
Collector Dissipation (TC = 25°C) 80 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13007 Rev. A 1
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FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
BV
CEO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
ON
t
STG
t
F
* Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2%
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 400 V
Emitter Cut-off Current VEB = 9V, IC = 0 1 mA
DC Current Gain * VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
8
5
60
30
1.0
2.0
3.0
1.2
1.6
Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
Output Capacitance VCB = 10V, f = 0.1MHz 110 pF
Turn On Time VCC = 125V, IC = 5A
Storge Time 3.0 μs
IB1 = -I
RL = 25Ω
B2
= 1A
1.6 μs
Fall Time 0.7 μs
hFE Classification
Classification H1 H2
h
FE1
15 ~ 28 26 ~ 39
V
V
V
V
V
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13007 Rev. A 2
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Typical Characteristics
Figure 1. DC Current Gain Figure 2. Saturation Voltage
100
VCE = 5V
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
10
IC = 3 I
B
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
1000
100
10
[pF], OUTPUT CAPACITANCE
ob
C
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
1000
100
[ns], TURN ON TIME
D
, t
R
t
VCC=125V
IC=5I
B
10
0.1 1 10
IC[A], COLLECTOR CURRENT
t
R
tD, VBE(off)=5V
Figure 5. Turn Off Time Figure 6. Forward Biased Safe Operating Area
10000
1000
[ns], TURN OFF TIME
F
100
, t
STG
t
10
0.1 1 10
t
STG
t
F
IC[A], COLLECTOR CURRENT
VCC=125V
IC=5I
B
100
10
DC
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EM IT T E R VOLTAGE
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13007 Rev. A 3
10μs
1ms
100μs
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Typical Characteristics (Continued)
Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000 10000
Vcc=50V,
=1A, IB2 = -1A
I
B1
L = 1mH
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
90
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13007 Rev. A 4
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Mechanical Dimensions
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
TO220
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13007 Rev. A 5
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FJP13007 High Voltage Fast-Switching NPN Power TransistorFJP13007
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13007 Rev. A 6
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