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FJN3303
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger
FJN3303 High Voltage Fast-Switching NPN Power Transistor
May 2005
TO-92
Absolute Maximum Ratings
1
1. Emitter 2. Collector 3.Base
TC = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Puls e Width = 5m s, Duty Cycle ≤ 10%
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current (DC) 1.5 A
Collector Current (Pulse) * 3 A
Base Current (DC) 0.75 A
Base Current (Pulse) * 1.5 A
Collector Power Dissipation (TC = 25°C) 1.1 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
©2005 Fairchild Semiconductor Corporation
FJN3303 Rev. D
1
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FJN3303 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
TC = 25°C unless other wise not ed
Symbol Parameter Conditions Min. Typ. Max Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
ON
t
STG
t
F
Thermal Characteristics
Collector-Base Breakdown Voltage IC = 500µA, IE = 0 700 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 9 V
Collector Cut-off Current VCB = 700V, IE = 0 10 µA
Emitter Cut-off Current VEB = 9V, IC = 0 10 µA
DC Current Gain VCE = 2V, IC = 0.5A
= 2V, IC = 1.0A
V
CE
Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
= 1.0A, IB = 0.25A
I
C
= 1.5A, IB = 0.5A
I
C
Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
= 1.0A, IB = 0.25A
I
C
14
5
23
0.5
1.0
3.0
1.0
1.2
Current Gain Bandwidth Product VCE = 10V, IC = 0.1A 4 MHz
Turn On Tim e VCC = 125V, IC = 1A
= - IB2 = -0.2A
I
Storage Time 4.0 µs
Fall Time 0.7 µs
TC = 25°C unless otherwise noted
B1
= 125Ω
R
L
1.1 µs
Symbol Parameter Rating Units
R
θJC
R
θJA
Thermal Resistance Junction-Case 48 °C/W
Thermal Resistance Junction-Ambient 125 °C/W
V
V
V
V
V
FJN3303 Rev. D
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Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[A], COLLECTOR CURRENT
C
I
0.2
0.0
012345678910
IB = 120 mA
IB = 40 mA
IB = 20 mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
10
IC = 4 I
B
Ta = 125 oC
Ta = 75 oC
Ta = 25 oC
100
VCE = 2V
Ta = 125 oC
Ta = - 25 oC
10
, DC CURRENT GAIN
FE
h
1
1E-3 0.01 0.1 1
Ta = 75 oC
Ta = 25 oC
IC [A], COLLECTOR CURRENT
10
IC = 4 I
B
FJN3303 High Voltage Fast-Switching NPN Power Transistor
1
Ta = - 25 oC
0.1
(sat) [V], SATURATI ON VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC [A], COLLECTOR CURRENT
1
Ta = - 25 oC
Ta = 125 oC
(sat) [V], SATURATI ON VOLTAGE
BE
V
0.1
0.01 0.1 1 10
Ta = 25 oC
Ta = 75 oC
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time
10
10
t
STG
t
F
IC [A], COLLECTOR CURRENT
1
t
F
s], SWITCHING TIME
0.1
µ
µ
µ
µ
[
F
& t
STG
t
IB1 = - IB2 = 0.2A
V
= 125V
CC
0.01
0.1 1
IC [A], COLLECTOR CURRENT
t
STG
1
s], SWITCHING TIME
µ
µ
µ
µ
[
0.1
F
& t
STG
t
IB1 = 120mA, IB2 = - 40mA
V
= 310V
CC
0.01
0.1 1
FJN3303 Rev. D
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FJN3303 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area
10
IC (DC)
1
0.1
0.01
[A], COLLECTOR CURRENT
C
I
TC = 25oC
Single Pulse
1E-3
0.1 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
1
[A], COLLECTOR CURRENT
C
I
IB1 = 1A, RB2 = 0
VCC = 50V, L =1 mH
0.1
100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
1.4
1.2
1.0
0.8
0.6
0.4
0.2
[W], COLLECTOR POWER DISSIPATION
C
0.0
P
0 25 50 75 100 125 150 175
Ta [oC], AMBIENT TEMPERATURE
FJN3303 Rev. D
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Mechanical Dimensions
0.46
±0.10
4.58
+0.25
–0.15
FJN3303 High Voltage Fast-Switching NPN Power Transistor
TO-92
±0.20
4.58
±0.40
14.47
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
FJN3303 Rev. D
Dimensions in Millimeters
5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FJN3303 High Voltage Fast-Switching NPN Power Transistor
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
6
FJN3303 Rev. D
Rev. I15
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