Datasheet FJL6920 Datasheet (Fairchild Semiconductor)

FJL6920

High Voltage Color Display Horizontal Deflection Output

• High Collector-Base Breakdown Voltage : BV

• Low Saturation Voltage : V

(sat) = 3V (Max.)

CE

• For Color Monitor

CBO

= 1700V

FJL6920

1

TO-264

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Rating Units

V

CBO

V

CEO

V

EBO

I

C

* Collector Current (Pulse) 30 A

I

CP

P

C

T

J

T

STG

* Pulse Test: PW=300µs, duty Cycle=2% Pulsed

Collector-Base Voltage 1700 V Collector-Emitter Voltage 800 V Emitter-Base Voltage 6 V Collector Current (DC) 20 A

Collector Dissipation 200 W Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

I

CES

I

CBO

I

EBO

BV

CBO

BV

CEO

BV

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V

V

CE

(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V

V

BE

* Storage Time VCC=200V, IC=10A, RL=20

t

STG

* Fall Time 0.15 0.2 µs

t

F

* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Collector Cut-off Current VCB=1400V, RBE=0 1 mA Collector Cut-off Current VCB=800V, IE=0 10 µA Emitter Cut-off Current VEB=4V, IC=0 1 mA Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V DC Current Gain VCE=5V, IC=1A

TC=25°C unless otherwise noted

V

=5V, IC=11A

CE

IB1=2.0A, IB2= - 4.0A

8

5.5 8.5

Ω

3 µs

Thermal Characteristics

TC=25°C unless otherwise noted

Symbol Parameter Typ Max Units

R

θjC

Thermal Resistance, Junction to Case 0.625 °C/W

Typical Characteristics

FJL6920

16

IB=4.0A

14

12

10

8

6

4

[A], COLLECTOR CURRENT

C

I

2

0

0246810

IB=2.0A

IB=1.5A

IB=1.0A

IB=0.5A

IB=0.2A

VCE [V], COLLECTOR-EMITTER VOLTAGE

100

Ta = 125oC

10

, DC CURRENT GAIN

FE

h

1

0.1 1 10 100

Ta = 25oC

Ta = - 25oC

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics Figure 2. DC Current Gain

10

1

0.1

IC = 3 I

B

Ta = 125oC

Ta = 25oC Ta = - 25oC

10

IC = 5 I

B

1

0.1

Ta = 25oC

VCE = 5V

Ta = 125oC

Ta = - 25oC

(SAT) [V], SATURATION VOLTAGE

CE

V

0.01

0.1 1 10 100

IC [A], COLLECTOR CURRENT

(SAT) [V], SATURATION VOLTAGE

CE

V

0.01

0.1 1 10 100

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

16

VCE = 5V

14

12

10

8

6

4

[A], COLLECTOR CURRENT

C

I

2

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

25oC125oC

VBE [V], BASE-EMITTER VOLTAGE

- 25oC

10

1

0.1

[µs], SWITCHING TIME

F

& t

STG

t

0.01 110

IB2 [A], REVERSE BASE CURRENT

t

STG

t

F

VCC = 200V,

= 10A, IB1 = 2A

I

C

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

Typical Characteristics

(Continued)

FJL6920

[µs], SWITCHING TIME & t

t

100

10

1

F

0.1

STG

0.01 110

IB1 [A], FORWARD BASE CURRENT

VCC = 200V,

= 10A, IB2 = - 4A

I

C

t

STG

t

F

10

1

[µs], SWITCHING TIME

F

& t

0.1

STG

t

110

IC [A], COLLECTOR CURRENT

t

F

VCC = 200V, I

= 2A, IB2 = - 4A

B1

t

STG

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

100

t = 100ms

t = 10ms

t = 1ms

IC (Pulse)

IC (DC)

10

1

0.1

[A], COLLECTOR CURRENT

C

I

TC = 25oC Single Pulse

0.01 1 10 100 1000 10000

VCE [V], COLLECTOR-EMITTER VOLTAGE

40

35

30

25

20

15

10

[A], COLLECTOR CURRENT

C

I

5

1

10 100 1000 10000

VBE(off) = -3V

RB2 = 0, IB1 = 15A

= 30V, L = 200µH

V

CC

VCE [V], COLLECTOR-EMITTER VOLTAGE

VBE(off) = -6V

Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area

300

250

200

150

100

[W], POWER DISSIPATION

C

50

P

0

0 255075100125150175

TC [OC], CASE TEMPERAT U R E

Figure 11. Power Dera ting

Package Demensions

(8.30) (8.30)

(9.00)

20.00

TO-264

±0.20

(1.00)

(4.00)

±0.20

6.00

FJL6920

(2.00)

(9.00)

±0.20

1.50

4.90

(11.00)

±0.20

(R2.00)

(R1.00)

(7.00)

ø3.30

±0.20

(7.00)

(1.50) (1.50)

±0.20

2.50

3.00

1.00

5.45TYP

[5.45

±0.20

5.00

±0.20

3.50

±0.30

(1.50)

]

[5.45

(0.50)

(2.00)

±0.20

+0.25 –0.10

5.45TYP

±0.30

(0.15)

]

±0.10

2.50

(2.80)

±0.20

20.00

±0.50

20.00

0.60

+0.25 –0.10

(1.50)

2.80

±0.30

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.