Datasheet fji5603d Datasheet

FJI5603D NPN Silicon Transistor

FJI5603D — NPN Silicon Transistor

June 2008

Applications

• High Voltage and High Speed Power Switch Application

• Electronic Ballast Application

Features

• Wide Safe Operating Area

• Small Variance in Storage Time

• Built-in Free Wheeling Diode

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

a

Equivalent Circuit

B

C

E

1

1.Base 2.Collector 3.Emitter

I2-PAK

Symbol Parameter Ratings Units

BV

CBO

BV

CEO

BV

EBO

I

C

I

CP

I

B

I

BP

P

D

T

J

T

STG

EAS Avalanche Energy(Tj=25°C, 8mH) 3.5 mJ

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10%

Collector-Base Voltage 1600 V Collector-Emitter Voltage 800 V Emitter-Base Voltage 12 V Collector Current(DC) 3 A Collector Current(Pulse)** 6 A Base Current 2 A Base Current(Pulse)** 4 A Power Dissipation(TC=25°C) 100 W Junction Temperature 150 °C Storage Junction Temperature Range - 65 ~ +150 °C

Thermal Characteristics* T

=25°C unless otherwise noted

a

Symbol Parameter Ratings Units

R

θjc

R

θja

* Device mounted on minimum pad size

Thermal Resistance, Junction to Case 1.25 °C/W Thermal Resistance, Junction to Ambient 80 °C/W

Ordering Information

Part Number Marking Package Packing Method Remarks

FJI5603DTU J5603D I2PAK TUBE

FJI5603D — NPN Silicon Transistor

Electrical Characteristics* T

=25°C unless otherwise noted

a

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CES

I

CEO

I

EBO

h

FE

VCE(sat) Collector-Emitter Saturation Voltage IC=250mA, IB=25mA TC=25°C 0.5 1.25 V

Collector-Base Breakdown Voltage IC=0.5mA, IE=0 1600 1689 V Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 870 V Emitter-Base Breakdown Voltage IE=0.5mA, IC=0 12 14.8 V Collector Cut-off Current V

Collector Cut-off Current VCE=800V,

CES

IE=0

VBE=0

=1600V,

TC=25°C 0.01 100 µA TC=125°C 1000 TC=25°C 0.01 100 µA

TC=125°C 1000 Emitter Cut-off Current VEB=12V, IC=0 0.05 500 µA DC Current Gain VCE=3V,

IC=0.4A

TC=25°C 20 29 35

TC=125°C 6 15

VCE=10V, IC=5mA TC=25°C 20 43

TC=125°C 20 46

IC=500mA, IB=50mA TC=25°C 1.5 2.5 V IC=1A, IB=0.2A TC=25°C 1.2 2.5 V

VBE(sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA TC=25°C 0.74 1.2 V

TC=125°C 0.61 1.1

IC=2A, IB=0.4A TC=25°C 0.85 1.2 V

TC=125°C 0.74 1.1

C

ib

C

ob

f

T

V

F

Input Capacitance VEB=10V, IC=0, f=1MHz 745 1000 pF Output Capacitance VCB=10V, IE=0, f=1MHz 56 500 pF Current Gain Bandwidth Product IC=0.1A,VCE=10V 5 MHz Diode Forward Voltage IF=0.4A 0.76 1.2 V

IF=1A 0.83 1.5 V

* Pulse Test: Pulse Widt=20µs, Duty Cycle≤10%

FJI5603D — NPN Silicon Transistor

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min Typ. Max. Units

RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs) t

ON

t

STG

t

F

t

ON

t

STG

t

F

INDUCTIVE LOAD SWITCHING (VCC=15V) t

STG

t

F

t

C

t

STG

t

F

t

C

Turn On Time IC=0.3A, IB1=50mA IB2=150mA

V

=125V

Storage Time 1.9 2.1 2.3 µs

CC

RL = 416Ω

400 600 ns

Fall Time 310 1000 ns Turn On Time IC=0.5A, IB1=50mA, IB2=250mA Storage Time 1.3 1.5 µs

VCC=125V, RL = 250Ω

600 1100 ns

Fall Time 180 350 ns

Storage Time IC=0.3A, IB1=50mAIB2=150mA, Fall Time 170 250 ns

Vz=300V, L

=200H

C

0.8 - 1.2 µs

Cross-over Time 180 250 ns Storage Time IC=0.5A, IB1=50mA, IB2=250mA, Fall Time 140 175 ns

Vz=300V, L

=200H

C

0.8 - 1.2 µs

Cross-over Time 170 200 ns

Typical Characteristics

FJI5603D — NPN Silicon Transistor

3

1A

900mA

800mA 700mA 600mA

2

500mA 400mA

300mA 200mA

1

[A], COLLECTOR CURRENT

C

I

0

01234567

IB=100mA

VCE[V], COLLECTOR EMITTER VOLTAG E

100

TJ=125oC

TJ=25oC

10

, DC CURRENT GAIN

FE

h

1

1 10 100 1000

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

IC=5I

10

B

1

(V), VOLTA G E

CE(sat)

V

0.1

TJ=125oC

TJ=25oC

IC=5I

B

1

[V], VOLTAG E

BE

V

TJ=25oC

VCE=10V

TJ=125oC

0.01 1 10 100 1000

IC(mA), COLLECTOR CURRENT

0.1 1 10 100 1k

IC[mA], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage

2

TJ=25oC

1000

3.0A

C

ib

2.0A

1.0A

1

[V], VOLTAGE

CE

V

0

1 10 100 1k

0.4A

IC=0.2A

IB[mA], BASE CURREN T

Figure 5. Typical Collector Saturation Voltage

100

CAPACITANCE[pF]

10

1

1 10 100

REVERSE VOLTAGE[V]

Figure 6. Capacitance

F=1MHz

C

ob

Typical Characteristics (Continued)

FJI5603D — NPN Silicon Transistor

10001000

900 800

IC=6IB1=2I VCC=125V PW=20us

B2

700 600

500

400

300

[ns],TIME

ON

t

200

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

TJ=125oC

TJ=25oC

IC[A], COLLECTOR CURRENT

Figure 7. Resistive Switching Time, t

10001000

900

IC=10IB1=5I VCC=125V PW=20us

B2

800

700

600

500

400

[ns],TIM E

ON

t

300

TJ=125oC

TJ=25oC

on

TJ=25oC

IC=6IB1=2I

B2

VCC=125V PW=20us

TJ=125oC

5

4.5 4

3.5

3

2.5

(us),TI M E

2

OFF

t

1.5

11

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTO R CURRENT

Figure 8. Resistive Switching Time, t

1010

9 8 7

6

5

4

3

(us),TIME

OFF

t

2

TJ=125oC

TJ=25oC

IC=10IB1=5I VCC=125V PW=20us

off

B2

200

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 9. Resistive Switching Time, t

4

3

2

IC=6IB1=2I VCC=15V VZ=300V LC=200uH

B2

TJ=125oC

on

(us),TIM E

STG

t

11

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 10. Resistive Switching Time, t

6

IC=10IB1=2I

5

4

3

(us),TIM E

2

STG

t

VCC=15V VZ=300V LC=200uH

B2

TJ=125oC

TJ=25oC

off

TJ=25oC

11

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 11. Inductive Switching Time, t

STG

11

0.3 0.4 0.5 0.6 0.7 0.8 0.9 112

IC[A], COLLECTOR CURRENT

Figure 12. Inductive Switching Time, t

STG

Typical Characteristics (Continued)

FJI5603D — NPN Silicon Transistor

400

IC=6IB1=2I VCC=15V VZ=300V LC=200uH

B2

300

200

100100

90 80 70

(ns),TIM E

F

t

60 50

40

30

20

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

TJ=25oC

TJ=125oC

IC[A], COLLECTOR CURRENT

Figure 13. Inductive Switching Time, t

500

IC=6IB1=2I VCC=15V VZ=300V LC=200uH

B2

400

300

200

[ns],TIME

C

t

TJ=125oC

TJ=25oC

F

800 700

IC=10IB1=2I VCC=15V VZ=300V LC=200uH

B2

600 500

400

300

TJ=25oC

200

(ns),TIM E

F

t

100100

90 80 70

60 50

0.3 0.4 0.5 0.6 0.7 0.8 0.9 112

TJ=125oC

IC[A], COLLECTOR CURRENT

Figure 14. Inductive Switching Time, t

2000

IC=10IB1=2I

B2

VCC=15V VZ=300V

10001000

LC=200uH

900 800 700

600 500

400

[ns],TIME

C

t

300

200

TJ=125oC

TJ=25oC

F

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 15. Inductive Switching Time, t

100

50

[W], POWER DISSIPATION

C

P

0

0 50 100 150 200

c

TC(oC), CASE TEMPERATURE

Figure 17. Power Derating

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 112

IC[A], COLLECTOR CURRENT

Figure 16. Inductive Switching Time, t

c

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FJI5603D NPN Silicon TransistorFJI5603D

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Forma tive or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I31